IXTP90N055T

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Mfr.Part #
IXTP90N055T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 55V 90A TO220AB
Stock
44,733
In Stock :
44,733

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 175 C
Mounting Style :
Through Hole
Length :
10.66 mm
Fall Time (Typ) :
19 ns
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
2770pF @ 25V
Turn-Off Delay Time :
39 ns
Operating Mode :
ENHANCEMENT MODE
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Operating Temperature :
-55°C~175°C TJ
Package :
Tube
Transistor Type :
1 N-Channel
Number of Channels :
1 Channel
Factory Lead Time :
24 Weeks
Rise Time :
21ns
Drain-source On Resistance-Max :
0.0084Ohm
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Type :
TrenchT2 Power MOSFET
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Rds On (Max) @ Id, Vgs :
8.4m Ω @ 25A, 10V
Mount :
Through Hole
Number of Terminations :
3
Qualification Status :
Not Qualified
Package / Case :
TO-220-3
Supplier Device Package :
TO-220AB
Channel Mode :
Enhancement
Pin Count :
3
JEDEC-95 Code :
TO-220AB
Manufacturer :
IXYS
Brand :
IXYS
FET Type :
N-Channel
Packaging :
Tube
Published :
2012
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Power Dissipation-Max :
150W Tc
Power Dissipation (Max) :
150W (Tc)
Power Dissipation :
150W
Avalanche Energy Rating (Eas) :
300 mJ
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Polarity :
N-Channel
Number of Elements :
1
FET Feature :
--
Vgs (Max) :
±20V
Tradename :
HiPerFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e1
ECCN Code :
EAR99
Pulsed Drain Current-Max (IDM) :
230A
Minimum Operating Temperature :
- 55 C
Drain to Source Breakdown Voltage :
55V
Product Status :
Active
Pbfree Code :
yes
Series :
TrenchT2™
Transistor Element Material :
SILICON
Width :
4.83 mm
Height :
16 mm
Reach Compliance Code :
Unknown
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Type :
MOSFET
Product Category :
MOSFET
Base Product Number :
IXTP90
RoHS :
Details
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
55V
Continuous Drain Current (ID) :
90A
RoHS Status :
ROHS3 Compliant
Additional Feature :
AVALANCHE RATED
Datasheets
IXTP90N055T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP90N055T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Type:TrenchT2 Power MOSFET, Number of Terminations:3, Package / Case:TO-220-3, IXTP90N055T pinout, IXTP90N055T datasheet PDF, IXTP90N055T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP90N055T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP90N055T


N-Channel Tube 8.4m Ω @ 25A, 10V ±20V 2770pF @ 25V 42nC @ 10V 55V TO-220-3

IXTP90N055T2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 300 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2770pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 39 ns.Peak drain current is 230A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 55V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTP90N055T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 230A.
a 55V drain to source voltage (Vdss)


IXTP90N055T2 Applications


There are a lot of IXYS
IXTP90N055T2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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