IXTP8N65X2M
- Mfr.Part #
- IXTP8N65X2M
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 4A TO220
- Stock
- 129
- In Stock :
- 129
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Series :
- --
- Maximum Operating Temperature :
- +150 °C
- Reach Compliance Code :
- not_compliant
- Width :
- 16.07mm
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 25V
- Vgs (Max) :
- ±30V
- Supplier Device Package :
- TO-220
- Published :
- 2015
- Mounting Style :
- Through Hole
- ECCN Code :
- EAR99
- Package Type :
- TO-220F
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 650V
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 4A, 10V
- MSL :
- MSL 1 - Unlimited
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Continuous Drain Current Id :
- 4A
- Power Dissipation :
- 32W
- Base Product Number :
- IXTP8
- Package :
- Tube
- FET Type :
- N-Channel
- Height :
- 4.9mm
- Qualification :
- -
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Manufacturer :
- IXYS Corporation
- Power Dissipation-Max :
- 32W Tc
- FET Feature :
- --
- Packaging :
- Tube
- Power Dissipation (Max) :
- 32W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Length :
- 10.36mm
- Channel Type :
- N
- Number of Channels :
- 1 Channel
- Number of Elements per Chip :
- 1
- Channel Mode :
- Enhancement
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 15 Weeks
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 4A
- Minimum Operating Temperature :
- -55 °C
- Datasheets
- IXTP8N65X2M

N-Channel Tube 550m Ω @ 4A, 10V ±30V 800pF @ 25V 12nC @ 10V 650V TO-220-3
IXTP8N65X2M Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTP8N65X2M Features
a continuous drain current (ID) of 4A
a 650V drain to source voltage (Vdss)
IXTP8N65X2M Applications
There are a lot of IXYS
IXTP8N65X2M applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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