IXTP8N50PM

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Mfr.Part #
IXTP8N50PM
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 4A TO220AB
Stock
36,554
In Stock :
36,554

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
41W (Tc)
Package Shape :
RECTANGULAR
Mounting Type :
Through Hole
Terminal Finish :
Matte Tin (Sn)
Drain-source On Resistance-Max :
0.8Ohm
Gate to Source Voltage (Vgs) :
30V
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
14 A
Reach Compliance Code :
Compliant
Series :
PolarHV™
Packaging :
Tube
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
Continuous Drain Current (ID) :
4A
Terminal Position :
Single
Case Connection :
Isolated
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
800m Ω @ 4A, 10V
JESD-609 Code :
e3
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max :
41W Tc
Vgs(th) (Max) @ Id :
5.5V @ 250µA
DS Breakdown Voltage-Min :
500 V
Pbfree Code :
yes
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
4A Tc
JEDEC-95 Code :
TO-220AB
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
4A
Number of Terminals :
3
Surface Mount :
No
Base Product Number :
IXTP8
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS Corporation
Drain to Source Breakdown Voltage :
500V
Rise Time :
28ns
Product Status :
Obsolete
Fall Time (Typ) :
23 ns
JESD-30 Code :
R-PSFM-T3
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
RoHS Status :
RoHS Compliant
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
500V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Published :
2006
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±30V
Configuration :
SINGLE WITH BUILT-IN DIODE
Additional Feature :
AVALANCHE RATED
Package / Case :
TO-220-3
Turn-Off Delay Time :
65 ns
Supplier Device Package :
TO-220AB
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
400 mJ
Power Dissipation :
41W
Datasheets
IXTP8N50PM
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP8N50PM from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, IXTP8N50PM pinout, IXTP8N50PM datasheet PDF, IXTP8N50PM amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP8N50PM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP8N50PM


N-Channel Tube 800m Ω @ 4A, 10V ±30V 1050pF @ 25V 20nC @ 10V 500V TO-220-3

IXTP8N50PM Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 400 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1050pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.4A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 65 ns.Peak drain current for this device is 14 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP8N50PM Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14 A.
a 500V drain to source voltage (Vdss)


IXTP8N50PM Applications


There are a lot of IXYS
IXTP8N50PM applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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