IXTP8N50PM
- Mfr.Part #
- IXTP8N50PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4A TO220AB
- Stock
- 36,554
- In Stock :
- 36,554
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 41W (Tc)
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn)
- Drain-source On Resistance-Max :
- 0.8Ohm
- Gate to Source Voltage (Vgs) :
- 30V
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 14 A
- Reach Compliance Code :
- Compliant
- Series :
- PolarHV™
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1050pF @ 25V
- Continuous Drain Current (ID) :
- 4A
- Terminal Position :
- Single
- Case Connection :
- Isolated
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 4A, 10V
- JESD-609 Code :
- e3
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max :
- 41W Tc
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- DS Breakdown Voltage-Min :
- 500 V
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 4A
- Number of Terminals :
- 3
- Surface Mount :
- No
- Base Product Number :
- IXTP8
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Drain to Source Breakdown Voltage :
- 500V
- Rise Time :
- 28ns
- Product Status :
- Obsolete
- Fall Time (Typ) :
- 23 ns
- JESD-30 Code :
- R-PSFM-T3
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Published :
- 2006
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-220-3
- Turn-Off Delay Time :
- 65 ns
- Supplier Device Package :
- TO-220AB
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Power Dissipation :
- 41W
- Datasheets
- IXTP8N50PM

N-Channel Tube 800m Ω @ 4A, 10V ±30V 1050pF @ 25V 20nC @ 10V 500V TO-220-3
IXTP8N50PM Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 400 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1050pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.4A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 65 ns.Peak drain current for this device is 14 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP8N50PM Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14 A.
a 500V drain to source voltage (Vdss)
IXTP8N50PM Applications
There are a lot of IXYS
IXTP8N50PM applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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