IXTP8N50P

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Mfr.Part #
IXTP8N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 8A TO220AB
Stock
17,287
In Stock :
17,287

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Packaging :
Tube
Terminal Finish :
Matte Tin (Sn)
Package Shape :
RECTANGULAR
Lead Free :
Lead Free
FET Type :
N-Channel
Supplier Device Package :
TO-220AB
Base Product Number :
IXTP8
Drain-source On Resistance-Max :
0.8Ohm
Published :
2006
JESD-30 Code :
R-PSFM-T3
Terminal Form :
THROUGH-HOLE
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Power Dissipation-Max :
150W Tc
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
14A
Power Dissipation :
150W
Voltage - Rated DC :
500V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Obsolete
Power Dissipation (Max) :
150W (Tc)
Transistor Element Material :
SILICON
Series :
PolarHV™
Element Configuration :
Single
Current Rating :
8A
Package / Case :
TO-220-3
Package :
Tube
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
500 V
JESD-609 Code :
e3
Polarity/Channel Type :
N-Channel
Factory Lead Time :
8 Weeks
Fall Time (Typ) :
23 ns
RoHS Status :
RoHS Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminals :
3
Pin Count :
3
Drain Current-Max (Abs) (ID) :
8A
Manufacturer :
IXYS Corporation
Rds On (Max) @ Id, Vgs :
800m Ω @ 4A, 10V
FET Feature :
--
Rise Time :
28ns
Avalanche Energy Rating (Eas) :
400 mJ
Continuous Drain Current (ID) :
8A
Vgs(th) (Max) @ Id :
5.5V @ 100μA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±30V
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
Reach Compliance Code :
Compliant
JEDEC-95 Code :
TO-220AB
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
AVALANCHE RATED
Gate to Source Voltage (Vgs) :
30V
Drain to Source Voltage (Vdss) :
500V
Terminal Position :
Single
Turn-Off Delay Time :
65 ns
Surface Mount :
No
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Drain to Source Breakdown Voltage :
500V
Qualification Status :
Not Qualified
Number of Elements :
1
Datasheets
IXTP8N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP8N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, IXTP8N50P pinout, IXTP8N50P datasheet PDF, IXTP8N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP8N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP8N50P


N-Channel Tube 800m Ω @ 4A, 10V ±30V 1050pF @ 25V 20nC @ 10V 500V TO-220-3

IXTP8N50P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 1050pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 14A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP8N50P Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14A.
a 500V drain to source voltage (Vdss)


IXTP8N50P Applications


There are a lot of IXYS
IXTP8N50P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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