IXTP8N50P

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Mfr.Part #
IXTP8N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 8A TO220AB
Stock
17,287
In Stock :
17,287

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current Rating :
8A
Number of Terminals :
3
Element Configuration :
Single
Power Dissipation-Max :
150W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Series :
PolarHV™
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
Turn-Off Delay Time :
65 ns
Lead Free :
Lead Free
Drain-source On Resistance-Max :
0.8Ohm
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
Manufacturer :
IXYS Corporation
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
Pulsed Drain Current-Max (IDM) :
14A
Pbfree Code :
yes
Number of Pins :
3
Terminal Position :
Single
Base Product Number :
IXTP8
Mount :
Through Hole
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
8A Tc
JEDEC-95 Code :
TO-220AB
Power Dissipation :
150W
Voltage - Rated DC :
500V
Pin Count :
3
Drain to Source Breakdown Voltage :
500V
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
30V
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Published :
2006
Package :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
400 mJ
FET Feature :
--
Terminal Finish :
Matte Tin (Sn)
Power Dissipation (Max) :
150W (Tc)
Rds On (Max) @ Id, Vgs :
800m Ω @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
Vgs (Max) :
±30V
Drain Current-Max (Abs) (ID) :
8A
Vgs(th) (Max) @ Id :
5.5V @ 100μA
Drain to Source Voltage (Vdss) :
500V
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Product Status :
Obsolete
JESD-30 Code :
R-PSFM-T3
Rise Time :
28ns
Factory Lead Time :
8 Weeks
DS Breakdown Voltage-Min :
500 V
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
23 ns
Continuous Drain Current (ID) :
8A
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Datasheets
IXTP8N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP8N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXTP8N50P pinout, IXTP8N50P datasheet PDF, IXTP8N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP8N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP8N50P


N-Channel Tube 800m Ω @ 4A, 10V ±30V 1050pF @ 25V 20nC @ 10V 500V TO-220-3

IXTP8N50P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 1050pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 14A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP8N50P Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14A.
a 500V drain to source voltage (Vdss)


IXTP8N50P Applications


There are a lot of IXYS
IXTP8N50P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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