IXTP8N50P
- Mfr.Part #
- IXTP8N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8A TO220AB
- Stock
- 17,287
- In Stock :
- 17,287
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 8A
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Power Dissipation-Max :
- 150W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Series :
- PolarHV™
- Supplier Device Package :
- TO-220AB
- Package / Case :
- TO-220-3
- Turn-Off Delay Time :
- 65 ns
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.8Ohm
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Manufacturer :
- IXYS Corporation
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 14A
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Terminal Position :
- Single
- Base Product Number :
- IXTP8
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 150W
- Voltage - Rated DC :
- 500V
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Package :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 400 mJ
- FET Feature :
- --
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation (Max) :
- 150W (Tc)
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 4A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1050pF @ 25V
- Vgs (Max) :
- ±30V
- Drain Current-Max (Abs) (ID) :
- 8A
- Vgs(th) (Max) @ Id :
- 5.5V @ 100μA
- Drain to Source Voltage (Vdss) :
- 500V
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Product Status :
- Obsolete
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 28ns
- Factory Lead Time :
- 8 Weeks
- DS Breakdown Voltage-Min :
- 500 V
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- THROUGH-HOLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 23 ns
- Continuous Drain Current (ID) :
- 8A
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Datasheets
- IXTP8N50P

N-Channel Tube 800m Ω @ 4A, 10V ±30V 1050pF @ 25V 20nC @ 10V 500V TO-220-3
IXTP8N50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 1050pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 14A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTP8N50P Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14A.
a 500V drain to source voltage (Vdss)
IXTP8N50P Applications
There are a lot of IXYS
IXTP8N50P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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