IXTP88N085T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

54ns

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

88A Tc

Published :

2006

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Mounting Type :

Through Hole

Pin Count :

3

Terminal Position :

Single

FET Feature :

--

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Compliant

Element Configuration :

Single

Packaging :

Tube

Product Status :

Obsolete

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

85 V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

240A

Rds On (Max) @ Id, Vgs :

11m Ω @ 25A, 10V

Max Operating Temperature :

175 °C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Power Dissipation :

230 W

Package :

Tube

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSFM-T3

Drain to Source Resistance :

11 mΩ

Vgs(th) (Max) @ Id :

4V @ 100µA

Vgs (Max) :

±20V

Power Dissipation (Max) :

230W (Tc)

Mount :

Through Hole

Base Product Number :

IXTP88

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

3140pF @ 25V

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminals :

3

Drain-source On Resistance-Max :

0.011Ohm

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

88A

Manufacturer :

IXYS Corporation

Package / Case :

TO-220-3

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

85V

Number of Terminations :

3

ECCN Code :

EAR99

Min Operating Temperature :

-55 °C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchMV™

Fall Time (Typ) :

29 ns

DS Breakdown Voltage-Min :

85 V

RoHS Status :

RoHS Compliant

Rds On Max :

11 mΩ

JEDEC-95 Code :

TO-220AB

Power Dissipation :

230W

Number of Elements :

1

Power Dissipation-Max :

230W Tc

Terminal Form :

THROUGH-HOLE

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Turn-Off Delay Time :

42 ns

Input Capacitance :

3.14 nF

Avalanche Energy Rating (Eas) :

500 mJ

Polarity/Channel Type :

N-Channel