IXTP80N12T2
- Mfr.Part #
- IXTP80N12T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 120V 80A TO220AB
- Stock
- 31,360
- In Stock :
- 31,360
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 325W Tc
- Surface Mount :
- No
- Drain to Source Voltage (Vdss) :
- 120V
- JESD-30 Code :
- R-PSFM-T3
- Supplier Device Package :
- TO-220
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS :
- Details
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Tradename :
- HiPerFET
- FET Type :
- N-Channel
- Product Status :
- Active
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Pulsed Drain Current-Max (IDM) :
- 200A
- FET Feature :
- -
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- TO-220-3
- DS Breakdown Voltage-Min :
- 120V
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Vgs (Max) :
- ±20V
- Channel Mode :
- Enhancement
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 40A, 10V
- Maximum Operating Temperature :
- + 175 C
- Rise Time :
- 14 ns
- Product :
- Power MOSFET Modules
- Pin Count :
- 3
- Number of Terminals :
- 3
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Product Type :
- MOSFET
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Type :
- Trench T2
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 80A
- Additional Feature :
- AVALANCHE RATED
- Brand :
- IXYS
- Base Product Number :
- IXTP80
- Package :
- Tube
- Mounting Style :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4740pF @ 25V
- Product Category :
- MOSFET
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max (Abs) :
- 325 W
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.017Ohm
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 325W (Tc)
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- Factory Lead Time :
- 24 Weeks
- Series :
- TrenchT2™
- Reach Compliance Code :
- Compliant
- Datasheets
- IXTP80N12T2

N-Channel Tube 17m Ω @ 40A, 10V ±20V 4740pF @ 25V 80nC @ 10V 120V TO-220-3
IXTP80N12T2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 400 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4740pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 80A.Peak drain current is 200A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 120V.For this transistor to work, a voltage 120V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTP80N12T2 Features
the avalanche energy rating (Eas) is 400 mJ
based on its rated peak drain current 200A.
a 120V drain to source voltage (Vdss)
IXTP80N12T2 Applications
There are a lot of IXYS
IXTP80N12T2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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