IXTP7N60PM
- Mfr.Part #
- IXTP7N60PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4A TO220AB
- Stock
- 35,327
- In Stock :
- 35,327
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 14 A
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 600 V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Terminal Form :
- THROUGH-HOLE
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Case Connection :
- Isolated
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminals :
- 3
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 27ns
- Pin Count :
- 3
- Base Product Number :
- IXTP7
- Published :
- 2008
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Package Shape :
- RECTANGULAR
- Mount :
- Through Hole
- Fall Time (Typ) :
- 26 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 41W Tc
- Manufacturer :
- IXYS Corporation
- Drain-source On Resistance-Max :
- 1.1 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 3.5A, 10V
- Continuous Drain Current (ID) :
- 4A
- Drain to Source Breakdown Voltage :
- 600V
- Reach Compliance Code :
- Compliant
- Drain Current-Max (Abs) (ID) :
- 4A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 41W (Tc)
- FET Type :
- N-Channel
- Series :
- Polar™
- Product Status :
- Obsolete
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Voltage (Vdss) :
- 600V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max (Abs) :
- 41 W
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 5.5V @ 100μA
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Turn-Off Delay Time :
- 65 ns
- Power Dissipation :
- 41W
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Surface Mount :
- No
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 1180pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Datasheets
- IXTP7N60PM

N-Channel Tube 1.1 Ω @ 3.5A, 10V ±30V 1180pF @ 25V 20nC @ 10V 600V TO-220-3
IXTP7N60PM Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1180pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 4A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 65 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 14 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTP7N60PM Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14 A.
a 600V drain to source voltage (Vdss)
IXTP7N60PM Applications
There are a lot of IXYS
IXTP7N60PM applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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