IXTP7N60PM

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220AB

Pulsed Drain Current-Max (IDM) :

14 A

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

600 V

Mounting Type :

Through Hole

Number of Terminations :

3

JESD-609 Code :

e1

Terminal Form :

THROUGH-HOLE

Avalanche Energy Rating (Eas) :

400 mJ

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

30V

Number of Terminals :

3

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-220AB

Rise Time :

27ns

Pin Count :

3

Base Product Number :

IXTP7

Published :

2008

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Package Shape :

RECTANGULAR

Mount :

Through Hole

Fall Time (Typ) :

26 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

41W Tc

Manufacturer :

IXYS Corporation

Drain-source On Resistance-Max :

1.1 Ω

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3.5A, 10V

Continuous Drain Current (ID) :

4A

Drain to Source Breakdown Voltage :

600V

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

4A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation (Max) :

41W (Tc)

FET Type :

N-Channel

Series :

Polar™

Product Status :

Obsolete

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Voltage (Vdss) :

600V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max (Abs) :

41 W

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5.5V @ 100μA

Pbfree Code :

yes

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Turn-Off Delay Time :

65 ns

Power Dissipation :

41W

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Number of Elements :

1

Surface Mount :

No

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V