IXTP7N60P
- Mfr.Part #
- IXTP7N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7A TO220AB
- Stock
- 29,992
- In Stock :
- 29,992
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Number of Terminals :
- 3
- Terminal Form :
- THROUGH-HOLE
- Current Rating :
- 7A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 150W
- Power Dissipation-Max :
- 150W Tc
- Qualification Status :
- Not Qualified
- Manufacturer :
- IXYS Corporation
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 7A
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 600 V
- FET Type :
- N-Channel
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-220-3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 150W (Tc)
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 14A
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Width :
- 4.83mm
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 20 ns
- Length :
- 10.66mm
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- FET Feature :
- --
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Breakdown Voltage :
- 600V
- RoHS Status :
- RoHS Compliant
- Base Product Number :
- IXTP7
- Voltage - Rated DC :
- 600V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 7A
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 3.5A, 10V
- Supplier Device Package :
- TO-220AB
- Series :
- PolarHV™
- Height :
- 9.15mm
- Product Status :
- Obsolete
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 1.1 Ω
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1080pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Turn-Off Delay Time :
- 65 ns
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5.5V @ 100μA
- Rise Time :
- 27ns
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 26 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IXTP7N60P

N-Channel Tube 1.1 Ω @ 3.5A, 10V ±30V 1080pF @ 25V 20nC @ 10V 600V TO-220-3
IXTP7N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1080pF @ 25V.This device conducts a continuous drain current (ID) of 7A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 7A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 14A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTP7N60P Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14A.
a 600V drain to source voltage (Vdss)
IXTP7N60P Applications
There are a lot of IXYS
IXTP7N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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