IXTP7N60P

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Mfr.Part #
IXTP7N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 7A TO220AB
Stock
29,992
In Stock :
29,992

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Number of Terminals :
3
Terminal Form :
THROUGH-HOLE
Current Rating :
7A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
150W
Power Dissipation-Max :
150W Tc
Qualification Status :
Not Qualified
Manufacturer :
IXYS Corporation
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
7A
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
600 V
FET Type :
N-Channel
Published :
2006
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-220-3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
400 mJ
Case Connection :
DRAIN
JEDEC-95 Code :
TO-220AB
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
150W (Tc)
Drain to Source Voltage (Vdss) :
600V
Vgs (Max) :
±30V
Pulsed Drain Current-Max (IDM) :
14A
JESD-30 Code :
R-PSFM-T3
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Width :
4.83mm
Lead Free :
Lead Free
Turn On Delay Time :
20 ns
Length :
10.66mm
Package :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Transistor Application :
SWITCHING
Factory Lead Time :
8 Weeks
FET Feature :
--
Number of Elements :
1
Additional Feature :
AVALANCHE RATED
Drain to Source Breakdown Voltage :
600V
RoHS Status :
RoHS Compliant
Base Product Number :
IXTP7
Voltage - Rated DC :
600V
Element Configuration :
Single
Continuous Drain Current (ID) :
7A
Number of Terminations :
3
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 3.5A, 10V
Supplier Device Package :
TO-220AB
Series :
PolarHV™
Height :
9.15mm
Product Status :
Obsolete
Mounting Type :
Through Hole
Pbfree Code :
yes
Drain-source On Resistance-Max :
1.1 Ω
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
1080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Turn-Off Delay Time :
65 ns
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Number of Pins :
3
Vgs(th) (Max) @ Id :
5.5V @ 100μA
Rise Time :
27ns
JESD-609 Code :
e3
Fall Time (Typ) :
26 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
IXTP7N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP7N60P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, IXTP7N60P pinout, IXTP7N60P datasheet PDF, IXTP7N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP7N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP7N60P


N-Channel Tube 1.1 Ω @ 3.5A, 10V ±30V 1080pF @ 25V 20nC @ 10V 600V TO-220-3

IXTP7N60P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1080pF @ 25V.This device conducts a continuous drain current (ID) of 7A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 7A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 14A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTP7N60P Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14A.
a 600V drain to source voltage (Vdss)


IXTP7N60P Applications


There are a lot of IXYS
IXTP7N60P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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