IXTP76P10T
- Mfr.Part #
- IXTP76P10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 76A TO220AB
- Stock
- 13,628
- In Stock :
- 13,628
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Package :
- Tube
- Channel Mode :
- Enhancement
- Reach Compliance Code :
- Unknown
- Min Operating Temperature :
- -55 °C
- Product Status :
- Active
- Max Operating Temperature :
- 150 °C
- Input Capacitance (Ciss) (Max) @ Vds :
- 13700pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Resistance :
- 24 mΩ
- Turn-Off Delay Time :
- 52 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 197nC @ 10V
- Power Dissipation-Max (Abs) :
- 298 W
- Continuous Drain Current (ID) :
- 76A
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Series :
- TrenchP™
- Drain to Source Breakdown Voltage :
- -100V
- Transistor Type :
- 1 P-Channel
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- P-Channel
- Published :
- 2010
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Radiation Hardening :
- No
- Transistor Polarity :
- P-Channel
- JESD-609 Code :
- e3
- Base Product Number :
- IXTP76
- Product Type :
- MOSFET
- Max Power Dissipation :
- 298 W
- Terminal Position :
- Single
- Input Capacitance :
- 13.7 nF
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 100V
- Minimum Operating Temperature :
- - 55 C
- Drain-source On Resistance-Max :
- 0.024Ohm
- ECCN Code :
- EAR99
- Rds On Max :
- 25 mΩ
- Number of Channels :
- 1 Channel
- Mount :
- Through Hole
- Fall Time (Typ) :
- 20 ns
- Drain Current-Max (Abs) (ID) :
- 76 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- Through Hole
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 100 V
- Power Dissipation (Max) :
- 298W (Tc)
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- P-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- RoHS :
- Compliant
- Surface Mount :
- No
- Vgs (Max) :
- ±15V
- Supplier Device Package :
- TO-220AB
- Factory Lead Time :
- 24 Weeks
- Pulsed Drain Current-Max (IDM) :
- 230A
- Brand :
- IXYS
- Power Dissipation-Max :
- 298W Tc
- Package / Case :
- TO-220-3
- Rise Time :
- 40ns
- Maximum Operating Temperature :
- + 150 C
- Lead Free :
- Lead Free
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 298W
- Configuration :
- Single
- Pbfree Code :
- yes
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 500mA, 10V
- Mounting Type :
- Through Hole
- Datasheets
- IXTP76P10T
IXTP76P10T Documents

P-Channel Tube 25m Ω @ 500mA, 10V ±15V 13700pF @ 25V 197nC @ 10V 100V TO-220-3
IXTP76P10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -100V.There is no drain current on this device since the maximum continuous current it can conduct is 76 A.As a result of its turn-off delay time, which is 52 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 230A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 24 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTP76P10T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 230A.
single MOSFETs transistor is 24 mΩ
a 100V drain to source voltage (Vdss)
IXTP76P10T Applications
There are a lot of IXYS
IXTP76P10T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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