IXTP76P10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchP™

Configuration :

Single

Number of Terminations :

3

Number of Channels :

1 Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

1000 mJ

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Surface Mount :

No

Rise Time :

40ns

Packaging :

Tube

Turn-Off Delay Time :

52 ns

Case Connection :

DRAIN

Package / Case :

TO-220-3

Minimum Operating Temperature :

- 55 C

Input Capacitance :

13.7 nF

Fall Time (Typ) :

20 ns

Drain-source On Resistance-Max :

0.024Ohm

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

24 mΩ

Transistor Application :

SWITCHING

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

100V

Maximum Operating Temperature :

+ 150 C

Mounting Style :

Through Hole

Drain to Source Breakdown Voltage :

-100V

Terminal Position :

Single

Polarity/Channel Type :

P-Channel

FET Feature :

--

JESD-30 Code :

R-PSFM-T3

Brand :

IXYS

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Rds On Max :

25 mΩ

Package Shape :

RECTANGULAR

Base Product Number :

IXTP76

Power Dissipation-Max :

298W Tc

Max Operating Temperature :

150 °C

Reach Compliance Code :

Unknown

Transistor Type :

1 P-Channel

Published :

2010

Rds On (Max) @ Id, Vgs :

25m Ω @ 500mA, 10V

Terminal Form :

THROUGH-HOLE

Pbfree Code :

yes

Product Type :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

Max Power Dissipation :

298 W

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

76 A

Transistor Polarity :

P-Channel

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

298 W

Continuous Drain Current (ID) :

76A

Number of Terminals :

3

Power Dissipation (Max) :

298W (Tc)

Mounting Type :

Through Hole

Vgs (Max) :

±15V

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Pin Count :

3

DS Breakdown Voltage-Min :

100 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Lead Free :

Lead Free

Channel Mode :

Enhancement

Radiation Hardening :

No

ECCN Code :

EAR99

Manufacturer :

IXYS

Element Configuration :

Single

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

Factory Lead Time :

24 Weeks

RoHS :

Compliant

Pulsed Drain Current-Max (IDM) :

230A

Terminal Finish :

Matte Tin (Sn)

Package :

Tube

Additional Feature :

AVALANCHE RATED

Power Dissipation :

298W

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-55 °C

Supplier Device Package :

TO-220AB