IXTP76P10T

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Mfr.Part #
IXTP76P10T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 100V 76A TO220AB
Stock
13,628
In Stock :
13,628

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
13700pF @ 25V
Published :
2010
Min Operating Temperature :
-55 °C
Mounting Type :
Through Hole
Package :
Tube
FET Feature :
--
Drain to Source Breakdown Voltage :
-100V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
DS Breakdown Voltage-Min :
100 V
Reach Compliance Code :
Unknown
Max Power Dissipation :
298 W
RoHS :
Compliant
Power Dissipation-Max (Abs) :
298 W
Product Status :
Active
Transistor Type :
1 P-Channel
Number of Terminations :
3
Terminal Position :
Single
Transistor Polarity :
P-Channel
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
25m Ω @ 500mA, 10V
Operating Mode :
ENHANCEMENT MODE
Rds On Max :
25 mΩ
Vgs (Max) :
±15V
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.024Ohm
Drain to Source Voltage (Vdss) :
100V
JEDEC-95 Code :
TO-220AB
Rise Time :
40ns
Number of Channels :
1 Channel
Power Dissipation :
298W
Configuration :
Single
Continuous Drain Current (ID) :
76A
Series :
TrenchP™
Max Operating Temperature :
150 °C
Base Product Number :
IXTP76
Avalanche Energy Rating (Eas) :
1000 mJ
Drain Current-Max (Abs) (ID) :
76 A
Turn-Off Delay Time :
52 ns
Product Category :
MOSFET
Channel Mode :
Enhancement
Minimum Operating Temperature :
- 55 C
ECCN Code :
EAR99
Lead Free :
Lead Free
Case Connection :
DRAIN
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
298W Tc
RoHS Status :
ROHS3 Compliant
Mounting Style :
Through Hole
Mount :
Through Hole
Terminal Finish :
Matte Tin (Sn)
Fall Time (Typ) :
20 ns
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e3
Product Type :
MOSFET
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Type :
P-Channel
Input Capacitance :
13.7 nF
Transistor Application :
SWITCHING
Number of Terminals :
3
Gate Charge (Qg) (Max) @ Vgs :
197nC @ 10V
Drain to Source Resistance :
24 mΩ
Power Dissipation (Max) :
298W (Tc)
Number of Elements :
1
Brand :
IXYS
Manufacturer :
IXYS
Current - Continuous Drain (Id) @ 25°C :
76A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
P-Channel
Packaging :
Tube
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
Package Shape :
RECTANGULAR
Additional Feature :
AVALANCHE RATED
Radiation Hardening :
No
Pulsed Drain Current-Max (IDM) :
230A
Datasheets
IXTP76P10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP76P10T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-220-3, IXTP76P10T pinout, IXTP76P10T datasheet PDF, IXTP76P10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP76P10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP76P10T


P-Channel Tube 25m Ω @ 500mA, 10V ±15V 13700pF @ 25V 197nC @ 10V 100V TO-220-3

IXTP76P10T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -100V.There is no drain current on this device since the maximum continuous current it can conduct is 76 A.As a result of its turn-off delay time, which is 52 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 230A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 24 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTP76P10T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 230A.
single MOSFETs transistor is 24 mΩ
a 100V drain to source voltage (Vdss)


IXTP76P10T Applications


There are a lot of IXYS
IXTP76P10T applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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