IXTP76N25T
- Mfr.Part #
- IXTP76N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 76A TO220AB
- Stock
- 47,739
- In Stock :
- 47,739
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSFM-T3
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Mount :
- Through Hole
- Series :
- --
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Base Product Number :
- IXTP76
- Tradename :
- HiPerFET
- Pin Count :
- 3
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max (Abs) :
- 460 W
- Number of Terminations :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 250V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 250V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Number of Channels :
- 1 Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 170A
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Published :
- 2007
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.039Ohm
- Configuration :
- Single
- Brand :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- ECCN Code :
- EAR99
- Product Status :
- Active
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 460W
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 76A
- Fall Time (Typ) :
- 29 ns
- Transistor Type :
- 1 N-Channel
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Additional Feature :
- AVALANCHE RATED
- Mounting Style :
- Through Hole
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- TO-220AB
- Product Type :
- MOSFET
- Channel Mode :
- Enhancement
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Rise Time :
- 25ns
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 500mA, 10V
- RoHS :
- Details
- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 76 A
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Power Dissipation (Max) :
- 460W (Tc)
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- --
- Factory Lead Time :
- 26 Weeks
- Turn-Off Delay Time :
- 56 ns
- DS Breakdown Voltage-Min :
- 250 V
- Power Dissipation-Max :
- 460W Tc
- Datasheets
- IXTP76N25T

N-Channel Tube 39m Ω @ 500mA, 10V ±30V 4500pF @ 25V 92nC @ 10V 250V TO-220-3
IXTP76N25T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 76A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.Its drain current is 76 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 170A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP76N25T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 170A.
a 250V drain to source voltage (Vdss)
IXTP76N25T Applications
There are a lot of IXYS
IXTP76N25T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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