IXTP76N25T

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Mfr.Part #
IXTP76N25T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 250V 76A TO220AB
Stock
47,739
In Stock :
47,739

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
76A
JEDEC-95 Code :
TO-220AB
Gate to Source Voltage (Vgs) :
30V
Reach Compliance Code :
Unknown
Drain Current-Max (Abs) (ID) :
76 A
Drain-source On Resistance-Max :
0.039Ohm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±30V
Mount :
Through Hole
Package / Case :
TO-220-3
Drain to Source Breakdown Voltage :
250V
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Lead Free :
Lead Free
Surface Mount :
No
Power Dissipation (Max) :
460W (Tc)
Drain to Source Voltage (Vdss) :
250V
Vgs(th) (Max) @ Id :
5V @ 1mA
Turn-Off Delay Time :
56 ns
Number of Channels :
1 Channel
Terminal Form :
THROUGH-HOLE
Qualification Status :
Not Qualified
RoHS :
Details
JESD-609 Code :
e1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
76A Tc
Power Dissipation-Max (Abs) :
460 W
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Factory Lead Time :
26 Weeks
Maximum Operating Temperature :
+ 150 C
Product Status :
Active
Product Type :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Number of Terminals :
3
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
92nC @ 10V
Supplier Device Package :
TO-220AB
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
250 V
Avalanche Energy Rating (Eas) :
1500 mJ
Power Dissipation :
460W
Pulsed Drain Current-Max (IDM) :
170A
Transistor Type :
1 N-Channel
Package Shape :
RECTANGULAR
Package :
Tube
Series :
--
Transistor Element Material :
SILICON
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Rise Time :
25ns
Configuration :
Single
Published :
2007
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Base Product Number :
IXTP76
Product Category :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Manufacturer :
IXYS
Channel Mode :
Enhancement
Rds On (Max) @ Id, Vgs :
39m Ω @ 500mA, 10V
Transistor Polarity :
N-Channel
Terminal Position :
Single
FET Feature :
--
Number of Terminations :
3
ECCN Code :
EAR99
Pin Count :
3
Tradename :
HiPerFET
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max :
460W Tc
Element Configuration :
Single
Brand :
IXYS
Fall Time (Typ) :
29 ns
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Datasheets
IXTP76N25T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP76N25T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXTP76N25T pinout, IXTP76N25T datasheet PDF, IXTP76N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP76N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP76N25T


N-Channel Tube 39m Ω @ 500mA, 10V ±30V 4500pF @ 25V 92nC @ 10V 250V TO-220-3

IXTP76N25T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 76A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.Its drain current is 76 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 170A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP76N25T Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 170A.
a 250V drain to source voltage (Vdss)


IXTP76N25T Applications


There are a lot of IXYS
IXTP76N25T applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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