IXTP76N25T
- Mfr.Part #
- IXTP76N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 76A TO220AB
- Stock
- 47,739
- In Stock :
- 47,739
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Mounting Style :
- Through Hole
- Continuous Drain Current (ID) :
- 76A
- JEDEC-95 Code :
- TO-220AB
- Gate to Source Voltage (Vgs) :
- 30V
- Reach Compliance Code :
- Unknown
- Drain Current-Max (Abs) (ID) :
- 76 A
- Drain-source On Resistance-Max :
- 0.039Ohm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Drain to Source Breakdown Voltage :
- 250V
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Power Dissipation (Max) :
- 460W (Tc)
- Drain to Source Voltage (Vdss) :
- 250V
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Turn-Off Delay Time :
- 56 ns
- Number of Channels :
- 1 Channel
- Terminal Form :
- THROUGH-HOLE
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Power Dissipation-Max (Abs) :
- 460 W
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 26 Weeks
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Active
- Product Type :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- Supplier Device Package :
- TO-220AB
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 250 V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Power Dissipation :
- 460W
- Pulsed Drain Current-Max (IDM) :
- 170A
- Transistor Type :
- 1 N-Channel
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Series :
- --
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Rise Time :
- 25ns
- Configuration :
- Single
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- IXTP76
- Product Category :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS
- Channel Mode :
- Enhancement
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 500mA, 10V
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- FET Feature :
- --
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Tradename :
- HiPerFET
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max :
- 460W Tc
- Element Configuration :
- Single
- Brand :
- IXYS
- Fall Time (Typ) :
- 29 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Datasheets
- IXTP76N25T

N-Channel Tube 39m Ω @ 500mA, 10V ±30V 4500pF @ 25V 92nC @ 10V 250V TO-220-3
IXTP76N25T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 76A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.Its drain current is 76 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 170A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP76N25T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 170A.
a 250V drain to source voltage (Vdss)
IXTP76N25T Applications
There are a lot of IXYS
IXTP76N25T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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