IXTP76N25T
- Mfr.Part #
- IXTP76N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 76A TO220AB
- Stock
- 47,739
- In Stock :
- 47,739
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Surface Mount :
- No
- Power Dissipation :
- 460W
- Package :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Category :
- MOSFET
- Terminal Position :
- Single
- Rise Time :
- 25ns
- Supplier Device Package :
- TO-220AB
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Tradename :
- HiPerFET
- Current - Continuous Drain (Id) @ 25°C :
- 76A Tc
- Fall Time (Typ) :
- 29 ns
- Brand :
- IXYS
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.039Ohm
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Product Status :
- Active
- Power Dissipation-Max :
- 460W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Feature :
- --
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e1
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- JESD-30 Code :
- R-PSFM-T3
- Transistor Type :
- 1 N-Channel
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max (Abs) :
- 460 W
- Factory Lead Time :
- 26 Weeks
- DS Breakdown Voltage-Min :
- 250 V
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 170A
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Base Product Number :
- IXTP76
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- Through Hole
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- Product Type :
- MOSFET
- Pin Count :
- 3
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- Turn-Off Delay Time :
- 56 ns
- Series :
- --
- Drain Current-Max (Abs) (ID) :
- 76 A
- Drain to Source Breakdown Voltage :
- 250V
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2007
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 250V
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 460W (Tc)
- RoHS :
- Details
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 76A
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 500mA, 10V
- Number of Channels :
- 1 Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Reach Compliance Code :
- Unknown
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXTP76N25T

N-Channel Tube 39m Ω @ 500mA, 10V ±30V 4500pF @ 25V 92nC @ 10V 250V TO-220-3
IXTP76N25T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 76A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.Its drain current is 76 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 170A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP76N25T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 170A.
a 250V drain to source voltage (Vdss)
IXTP76N25T Applications
There are a lot of IXYS
IXTP76N25T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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