IXTP76N25T

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Mfr.Part #
IXTP76N25T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 250V 76A TO220AB
Stock
47,739
In Stock :
47,739

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Surface Mount :
No
Power Dissipation :
460W
Package :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Category :
MOSFET
Terminal Position :
Single
Rise Time :
25ns
Supplier Device Package :
TO-220AB
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Tradename :
HiPerFET
Current - Continuous Drain (Id) @ 25°C :
76A Tc
Fall Time (Typ) :
29 ns
Brand :
IXYS
Mount :
Through Hole
Mounting Type :
Through Hole
Packaging :
Tube
Drain-source On Resistance-Max :
0.039Ohm
Avalanche Energy Rating (Eas) :
1500 mJ
Product Status :
Active
Power Dissipation-Max :
460W Tc
Gate to Source Voltage (Vgs) :
30V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Feature :
--
Pbfree Code :
yes
Manufacturer :
IXYS
Terminal Form :
THROUGH-HOLE
JESD-609 Code :
e1
Gate Charge (Qg) (Max) @ Vgs :
92nC @ 10V
JESD-30 Code :
R-PSFM-T3
Transistor Type :
1 N-Channel
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
460 W
Factory Lead Time :
26 Weeks
DS Breakdown Voltage-Min :
250 V
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 150 C
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
170A
Number of Elements :
1
Qualification Status :
Not Qualified
Configuration :
Single
Base Product Number :
IXTP76
Vgs(th) (Max) @ Id :
5V @ 1mA
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
Through Hole
Vgs (Max) :
±30V
Transistor Application :
SWITCHING
Channel Mode :
Enhancement
Product Type :
MOSFET
Pin Count :
3
Minimum Operating Temperature :
- 55 C
Package Shape :
RECTANGULAR
Turn-Off Delay Time :
56 ns
Series :
--
Drain Current-Max (Abs) (ID) :
76 A
Drain to Source Breakdown Voltage :
250V
Additional Feature :
AVALANCHE RATED
Published :
2007
Number of Terminals :
3
Element Configuration :
Single
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
250V
Polarity/Channel Type :
N-Channel
Lead Free :
Lead Free
Power Dissipation (Max) :
460W (Tc)
RoHS :
Details
Package / Case :
TO-220-3
Continuous Drain Current (ID) :
76A
Rds On (Max) @ Id, Vgs :
39m Ω @ 500mA, 10V
Number of Channels :
1 Channel
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Reach Compliance Code :
Unknown
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Datasheets
IXTP76N25T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP76N25T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXTP76N25T pinout, IXTP76N25T datasheet PDF, IXTP76N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP76N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP76N25T


N-Channel Tube 39m Ω @ 500mA, 10V ±30V 4500pF @ 25V 92nC @ 10V 250V TO-220-3

IXTP76N25T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 76A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.Its drain current is 76 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 170A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP76N25T Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 170A.
a 250V drain to source voltage (Vdss)


IXTP76N25T Applications


There are a lot of IXYS
IXTP76N25T applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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