IXTP75N10P

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Mfr.Part #
IXTP75N10P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 75A TO220AB
Stock
11,912
In Stock :
11,912

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
MSL :
-
Series :
PolarHT™
Qualification :
-
Pbfree Code :
yes
Minimum Operating Temperature :
-55 °C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
24 Weeks
Operating Temperature :
-55°C~175°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Type :
1 N-Channel
Pin Count :
3
Power Dissipation-Max :
360W Tc
Brand :
IXYS
Published :
2004
Drain to Source Breakdown Voltage :
100V
Product Category :
MOSFET
Rise Time :
53ns
Configuration :
Single
Polarity/Channel Type :
N-Channel
Mounting Style :
Through Hole
Drain-source On Resistance-Max :
0.025 Ω
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Base Product Number :
IXTP75
Height :
9.15mm
Continuous Drain Current (ID) :
75A
JEDEC-95 Code :
TO-220AB
Power Dissipation :
360W
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Terminal Position :
Single
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
100 V
Terminal Form :
THROUGH-HOLE
Continuous Drain Current Id :
75A
Fall Time (Typ) :
45 ns
Width :
4.83 mm
FET Feature :
--
Supplier Device Package :
TO-220AB
Additional Feature :
AVALANCHE RATED
Terminal Finish :
Matte Tin (Sn)
Number of Channels :
1
Number of Terminals :
3
Threshold Voltage :
5.5V
Tradename :
PolarHT
Channel Type :
N
Mounting Type :
Through Hole
Maximum Operating Temperature :
+175 °C
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 25V
Channel Mode :
Enhancement
Package :
Tube
Vgs(th) (Max) @ Id :
5.5V @ 250µA
REACH SVHC :
No SVHC
Gate Charge (Qg) (Max) @ Vgs :
74nC @ 10V
Rds On (Max) @ Id, Vgs :
25m Ω @ 500mA, 10V
Gate to Source Voltage (Vgs) :
20V
RoHS :
Details
Turn On Delay Time :
27 ns
Type :
PolarHT Power MOSFET
ECCN Code :
EAR99
Resistance :
25mOhm
Power Dissipation (Max) :
360W (Tc)
Product Status :
Active
Surface Mount :
No
Package Shape :
RECTANGULAR
Radiation Hardening :
No
Turn-Off Delay Time :
66 ns
Reach Compliance Code :
Compliant
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
1000 mJ
Drain to Source Voltage (Vdss) :
100V
Package Type :
TO-220
Pulsed Drain Current-Max (IDM) :
200A
Number of Pins :
3
Number of Elements per Chip :
1
Manufacturer :
IXYS
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Product Type :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Number of Elements :
1
Subcategory :
MOSFETs
Package / Case :
TO-220-3
Element Configuration :
Single
Length :
10.66 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Datasheets
IXTP75N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP75N10P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1, Mounting Type:Through Hole, Type:PolarHT Power MOSFET, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, IXTP75N10P pinout, IXTP75N10P datasheet PDF, IXTP75N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP75N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP75N10P


N-Channel Tube 25m Ω @ 500mA, 10V ±20V 2250pF @ 25V 74nC @ 10V 100V TO-220-3

IXTP75N10P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [66 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 200A.A turn-on delay time of 27 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5.5V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP75N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 200A.
a threshold voltage of 5.5V
a 100V drain to source voltage (Vdss)


IXTP75N10P Applications


There are a lot of IXYS
IXTP75N10P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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