IXTP75N10P
- Mfr.Part #
- IXTP75N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A TO220AB
- Stock
- 11,912
- In Stock :
- 11,912
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- MSL :
- -
- Series :
- PolarHT™
- Qualification :
- -
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- -55 °C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 24 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Type :
- 1 N-Channel
- Pin Count :
- 3
- Power Dissipation-Max :
- 360W Tc
- Brand :
- IXYS
- Published :
- 2004
- Drain to Source Breakdown Voltage :
- 100V
- Product Category :
- MOSFET
- Rise Time :
- 53ns
- Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Mounting Style :
- Through Hole
- Drain-source On Resistance-Max :
- 0.025 Ω
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Base Product Number :
- IXTP75
- Height :
- 9.15mm
- Continuous Drain Current (ID) :
- 75A
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 360W
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 100 V
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current Id :
- 75A
- Fall Time (Typ) :
- 45 ns
- Width :
- 4.83 mm
- FET Feature :
- --
- Supplier Device Package :
- TO-220AB
- Additional Feature :
- AVALANCHE RATED
- Terminal Finish :
- Matte Tin (Sn)
- Number of Channels :
- 1
- Number of Terminals :
- 3
- Threshold Voltage :
- 5.5V
- Tradename :
- PolarHT
- Channel Type :
- N
- Mounting Type :
- Through Hole
- Maximum Operating Temperature :
- +175 °C
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Channel Mode :
- Enhancement
- Package :
- Tube
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 500mA, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS :
- Details
- Turn On Delay Time :
- 27 ns
- Type :
- PolarHT Power MOSFET
- ECCN Code :
- EAR99
- Resistance :
- 25mOhm
- Power Dissipation (Max) :
- 360W (Tc)
- Product Status :
- Active
- Surface Mount :
- No
- Package Shape :
- RECTANGULAR
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 66 ns
- Reach Compliance Code :
- Compliant
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Drain to Source Voltage (Vdss) :
- 100V
- Package Type :
- TO-220
- Pulsed Drain Current-Max (IDM) :
- 200A
- Number of Pins :
- 3
- Number of Elements per Chip :
- 1
- Manufacturer :
- IXYS
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Number of Elements :
- 1
- Subcategory :
- MOSFETs
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Length :
- 10.66 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Datasheets
- IXTP75N10P

N-Channel Tube 25m Ω @ 500mA, 10V ±20V 2250pF @ 25V 74nC @ 10V 100V TO-220-3
IXTP75N10P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [66 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 200A.A turn-on delay time of 27 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5.5V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP75N10P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 200A.
a threshold voltage of 5.5V
a 100V drain to source voltage (Vdss)
IXTP75N10P Applications
There are a lot of IXYS
IXTP75N10P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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