IXTP75N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

1000 mJ

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

5.5V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Package Shape :

RECTANGULAR

Lead Free :

Lead Free

Package Type :

TO-220

Package :

Tube

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Packaging :

Tube

Pbfree Code :

yes

Resistance :

25mOhm

Maximum Operating Temperature :

+175 °C

Element Configuration :

Single

Power Dissipation :

360W

Factory Lead Time :

24 Weeks

Pulsed Drain Current-Max (IDM) :

200A

Tradename :

PolarHT

Number of Elements per Chip :

1

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

360W Tc

FET Feature :

--

Pin Count :

3

REACH SVHC :

No SVHC

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

100V

Product Status :

Active

Power Dissipation (Max) :

360W (Tc)

Surface Mount :

No

Rise Time :

53ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

66 ns

Supplier Device Package :

TO-220AB

Continuous Drain Current Id :

75A

Number of Channels :

1

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Height :

9.15mm

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Qualification :

-

Series :

PolarHT™

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

JESD-609 Code :

e3

Turn On Delay Time :

27 ns

Width :

4.83 mm

Continuous Drain Current (ID) :

75A

Base Product Number :

IXTP75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

100V

Subcategory :

MOSFETs

Package / Case :

TO-220-3

Terminal Position :

Single

Number of Pins :

3

Brand :

IXYS

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Vgs (Max) :

±20V

Channel Type :

N

Manufacturer :

IXYS

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

JEDEC-95 Code :

TO-220AB

Number of Terminals :

3

Configuration :

Single

Drain-source On Resistance-Max :

0.025 Ω

Length :

10.66 mm

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Minimum Operating Temperature :

-55 °C

Rds On (Max) @ Id, Vgs :

25m Ω @ 500mA, 10V

Mounting Style :

Through Hole

Fall Time (Typ) :

45 ns

MSL :

-

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

DS Breakdown Voltage-Min :

100 V

JESD-30 Code :

R-PSFM-T3

Type :

PolarHT Power MOSFET

RoHS :

Details