IXTP70N085T
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- Mfr.Part #
- IXTP70N085T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 70A TO220AB
- Stock
- 34,920
- In Stock ：
- 34,920
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Supplier Device Package :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- Fall Time (Typ) :
- 40 ns
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Product Status :
- Obsolete
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Power Dissipation :
- 176W
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Drain to Source Voltage (Vdss) :
- 85V
- Manufacturer :
- IXYS Corporation
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Element Configuration :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 70A
- Series :
- TrenchMV™
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- Rise Time :
- 72ns
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 40 ns
- Power Dissipation-Max :
- 176W Tc
- Case Connection :
- DRAIN
- Package Shape :
- RECTANGULAR
- Published :
- 2006
- Packaging :
- Tube
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.0135Ohm
- Power Dissipation (Max) :
- 176W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 85V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2570pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 13.5m Ω @ 25A, 10V
- JESD-609 Code :
- e3
- Base Product Number :
- IXTP70
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 190A
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Matte Tin (Sn)
- DS Breakdown Voltage-Min :
- 85 V
- Datasheets
- IXTP70N085T
N-Channel Tube 13.5m Ω @ 25A, 10V ±20V 2570pF @ 25V 59nC @ 10V 85V TO-220-3
IXTP70N085T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2570pF @ 25V.This device conducts a continuous drain current (ID) of 70A, which is the maximum continuous current transistor can conduct.Using VGS=85V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 85V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 190A.A normal operation of the DS requires keeping the breakdown voltage above 85 V.This transistor requires a drain-source voltage (Vdss) of 85V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTP70N085T Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 190A.
a 85V drain to source voltage (Vdss)
IXTP70N085T Applications
There are a lot of IXYS
IXTP70N085T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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