IXTP6N50P

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Mfr.Part #
IXTP6N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 6A TO220AB
Stock
2,968
In Stock :
2,968

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
65 ns
Rise Time :
28ns
Pbfree Code :
yes
Power Dissipation :
100W
JEDEC-95 Code :
TO-220AB
Operating Mode :
ENHANCEMENT MODE
Drain to Source Resistance :
1.1Ohm
FET Feature :
--
Current Rating :
6A
Product Status :
Obsolete
Drain to Source Breakdown Voltage :
500V
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
30V
Input Capacitance :
740pF
Gate Charge (Qg) (Max) @ Vgs :
14.6nC @ 10V
Manufacturer :
IXYS Corporation
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
1.1Ohm @ 3A, 10V
Rds On Max :
1.1 Ω
JESD-30 Code :
R-PSFM-T3
Published :
2006
Drain to Source Voltage (Vdss) :
500V
Terminal Form :
THROUGH-HOLE
Package Shape :
RECTANGULAR
Max Operating Temperature :
150°C
Avalanche Energy Rating (Eas) :
250 mJ
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Lead Free :
Lead Free
Packaging :
Tube
Vgs (Max) :
±30V
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
RoHS Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) :
15 A
Supplier Device Package :
TO-220AB
Number of Terminals :
3
Continuous Drain Current (ID) :
6A
Surface Mount :
No
Mount :
Through Hole
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
740pF @ 25V
Factory Lead Time :
8 Weeks
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Polarity/Channel Type :
N-Channel
DS Breakdown Voltage-Min :
500 V
FET Type :
N-Channel
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
5V @ 50μA
Power Dissipation (Max) :
100W (Tc)
Mounting Type :
Through Hole
Package :
Tube
Terminal Position :
Single
Voltage - Rated DC :
500V
Series :
PolarHV™
Terminal Finish :
Matte Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Power Dissipation-Max :
100W Tc
Fall Time (Typ) :
26 ns
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Product Number :
IXTP6
Drain-source On Resistance-Max :
1.1 Ω
Number of Elements :
1
Transistor Application :
SWITCHING
Min Operating Temperature :
-55°C
Datasheets
IXTP6N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP6N50P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, IXTP6N50P pinout, IXTP6N50P datasheet PDF, IXTP6N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP6N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP6N50P


N-Channel Tube 1.1Ohm @ 3A, 10V ±30V 740pF @ 25V 14.6nC @ 10V 500V TO-220-3

IXTP6N50P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 250 mJ.A device's maximum input capacitance is 740pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 65 ns.Its maximum pulsed drain current is 15 A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.1Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP6N50P Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 15 A.
single MOSFETs transistor is 1.1Ohm
a 500V drain to source voltage (Vdss)


IXTP6N50P Applications


There are a lot of IXYS
IXTP6N50P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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