IXTP6N50P

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Mfr.Part #
IXTP6N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 6A TO220AB
Stock
2,968
In Stock :
2,968

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Pulsed Drain Current-Max (IDM) :
15 A
Terminal Position :
Single
Rise Time :
28ns
Pbfree Code :
yes
Voltage - Rated DC :
500V
Input Capacitance (Ciss) (Max) @ Vds :
740pF @ 25V
Vgs (Max) :
±30V
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
500 V
Package / Case :
TO-220-3
FET Feature :
--
Current Rating :
6A
Manufacturer :
IXYS Corporation
Factory Lead Time :
8 Weeks
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Drain-source On Resistance-Max :
1.1 Ω
Number of Pins :
3
JEDEC-95 Code :
TO-220AB
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
RoHS Status :
RoHS Compliant
Max Operating Temperature :
150°C
Gate Charge (Qg) (Max) @ Vgs :
14.6nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Rds On Max :
1.1 Ω
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Element Configuration :
Single
Power Dissipation-Max :
100W Tc
Turn-Off Delay Time :
65 ns
Continuous Drain Current (ID) :
6A
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
100W (Tc)
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
500V
Vgs(th) (Max) @ Id :
5V @ 50μA
Polarity/Channel Type :
N-Channel
Base Product Number :
IXTP6
Fall Time (Typ) :
26 ns
Input Capacitance :
740pF
Rds On (Max) @ Id, Vgs :
1.1Ohm @ 3A, 10V
Power Dissipation :
100W
Min Operating Temperature :
-55°C
Terminal Finish :
Matte Tin (Sn)
Avalanche Energy Rating (Eas) :
250 mJ
Pin Count :
3
Transistor Application :
SWITCHING
Mount :
Through Hole
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Supplier Device Package :
TO-220AB
Surface Mount :
No
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
500V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance :
1.1Ohm
Product Status :
Obsolete
Published :
2006
JESD-609 Code :
e3
Series :
PolarHV™
Datasheets
IXTP6N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP6N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, IXTP6N50P pinout, IXTP6N50P datasheet PDF, IXTP6N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP6N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP6N50P


N-Channel Tube 1.1Ohm @ 3A, 10V ±30V 740pF @ 25V 14.6nC @ 10V 500V TO-220-3

IXTP6N50P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 250 mJ.A device's maximum input capacitance is 740pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 65 ns.Its maximum pulsed drain current is 15 A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.1Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP6N50P Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 15 A.
single MOSFETs transistor is 1.1Ohm
a 500V drain to source voltage (Vdss)


IXTP6N50P Applications


There are a lot of IXYS
IXTP6N50P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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