IXTP6N50P
- Mfr.Part #
- IXTP6N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 6A TO220AB
- Stock
- 2,968
- In Stock :
- 2,968
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 15 A
- Terminal Position :
- Single
- Rise Time :
- 28ns
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 740pF @ 25V
- Vgs (Max) :
- ±30V
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 500 V
- Package / Case :
- TO-220-3
- FET Feature :
- --
- Current Rating :
- 6A
- Manufacturer :
- IXYS Corporation
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 1.1 Ω
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- RoHS Status :
- RoHS Compliant
- Max Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 14.6nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On Max :
- 1.1 Ω
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Number of Terminals :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Element Configuration :
- Single
- Power Dissipation-Max :
- 100W Tc
- Turn-Off Delay Time :
- 65 ns
- Continuous Drain Current (ID) :
- 6A
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 100W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 500V
- Vgs(th) (Max) @ Id :
- 5V @ 50μA
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXTP6
- Fall Time (Typ) :
- 26 ns
- Input Capacitance :
- 740pF
- Rds On (Max) @ Id, Vgs :
- 1.1Ohm @ 3A, 10V
- Power Dissipation :
- 100W
- Min Operating Temperature :
- -55°C
- Terminal Finish :
- Matte Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-220AB
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 500V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Resistance :
- 1.1Ohm
- Product Status :
- Obsolete
- Published :
- 2006
- JESD-609 Code :
- e3
- Series :
- PolarHV™
- Datasheets
- IXTP6N50P

N-Channel Tube 1.1Ohm @ 3A, 10V ±30V 740pF @ 25V 14.6nC @ 10V 500V TO-220-3
IXTP6N50P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 250 mJ.A device's maximum input capacitance is 740pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 65 ns.Its maximum pulsed drain current is 15 A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.1Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP6N50P Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 15 A.
single MOSFETs transistor is 1.1Ohm
a 500V drain to source voltage (Vdss)
IXTP6N50P Applications
There are a lot of IXYS
IXTP6N50P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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