IXTP60N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

700 mJ

Base Product Number :

IXTP60

Tradename :

HiPerFET

JESD-30 Code :

R-PSFM-T3

Max Power Dissipation :

500 W

Drain to Source Breakdown Voltage :

200V

Power Dissipation-Max :

500W Tc

Mounting Style :

Through Hole

Pin Count :

3

Number of Terminals :

3

Mounting Type :

Through Hole

Rds On Max :

40 mΩ

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

500W (Tc)

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max (Abs) :

500 W

Manufacturer :

IXYS

Rds On (Max) @ Id, Vgs :

40m Ω @ 30A, 10V

JEDEC-95 Code :

TO-220AB

Power Dissipation :

500W

Terminal Position :

Single

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Mount :

Through Hole

Drain to Source Resistance :

32 mΩ

Product Status :

Active

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Brand :

IXYS

Surface Mount :

No

Channel Mode :

Enhancement

Product Category :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2010

Factory Lead Time :

26 Weeks

Input Capacitance :

4.53 nF

ECCN Code :

EAR99

Case Connection :

DRAIN

Package :

Tube

Drain-source On Resistance-Max :

0.04Ohm

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

13 ns

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Packaging :

Tube

Transistor Type :

1 N-Channel

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

60A

Supplier Device Package :

TO-220AB

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

200V

DS Breakdown Voltage-Min :

200 V

Number of Elements :

1

Max Operating Temperature :

175 °C

Transistor Polarity :

N-Channel

RoHS :

Details

Product Type :

MOSFET

Number of Channels :

1 Channel

Number of Terminations :

3

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Series :

Trench™

Input Capacitance (Ciss) (Max) @ Vds :

4530pF @ 25V

FET Feature :

--

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

150A

Maximum Operating Temperature :

+ 175 C

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

60 A