IXTP60N10T

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Mfr.Part #
IXTP60N10T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 60A TO220AB
Stock
50
In Stock :
50

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Number of Terminals :
3
Manufacturer :
IXYS
Transistor Type :
1 N-Channel
FET Feature :
--
Resistance :
18mOhm
DS Breakdown Voltage-Min :
100 V
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
2650pF @ 25V
Mounting Style :
Through Hole
Drain Current-Max (Abs) (ID) :
60 A
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
176 W
Mount :
Through Hole
Transistor Element Material :
SILICON
Brand :
IXYS
Vgs (Max) :
±30V
Product Status :
Active
Length :
10.66 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Operating Temperature :
-55°C~175°C TJ
JEDEC-95 Code :
TO-220AB
Transistor Polarity :
N-Channel
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Product Category :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS :
Details
Minimum Operating Temperature :
- 55 C
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Tradename :
HiPerFET
Base Product Number :
IXTP60
Package :
Tube
Power Dissipation :
176W
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Voltage (Vdss) :
100V
Drain-source On Resistance-Max :
0.018 Ω
Power Dissipation-Max :
176W Tc
Number of Channels :
1 Channel
Rise Time :
40ns
Drain to Source Breakdown Voltage :
100V
Width :
4.82 mm
JESD-609 Code :
e3
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
18m Ω @ 25A, 10V
Power Dissipation (Max) :
176W (Tc)
Lead Free :
Lead Free
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Configuration :
Single
Maximum Operating Temperature :
+ 175 C
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Terminal Form :
THROUGH-HOLE
Channel Mode :
Enhancement
Height :
9.15 mm
Product Type :
MOSFET
Avalanche Energy Rating (Eas) :
500 mJ
Number of Terminations :
3
Published :
2008
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
60A
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
180 A
Case Connection :
DRAIN
Factory Lead Time :
24 Weeks
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Fall Time (Typ) :
37 ns
Turn-Off Delay Time :
43 ns
Qualification Status :
Not Qualified
Number of Pins :
3
Terminal Finish :
Matte Tin (Sn)
Terminal Position :
Single
Packaging :
Tube
Series :
TrenchMV™
Datasheets
IXTP60N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP60N10T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, IXTP60N10T pinout, IXTP60N10T datasheet PDF, IXTP60N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP60N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP60N10T


N-Channel Tube 18m Ω @ 25A, 10V ±30V 2650pF @ 25V 49nC @ 10V 100V TO-220-3

IXTP60N10T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2650pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.There is no drain current on this device since the maximum continuous current it can conduct is 60 A.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 180 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTP60N10T Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 180 A.
a 100V drain to source voltage (Vdss)


IXTP60N10T Applications


There are a lot of IXYS
IXTP60N10T applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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