IXTP60N10T
- Mfr.Part #
- IXTP60N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A TO220AB
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- TrenchMV™
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 24 Weeks
- Case Connection :
- DRAIN
- Transistor Polarity :
- N-Channel
- Configuration :
- Single
- Published :
- 2008
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 25A, 10V
- Mounting Style :
- Through Hole
- Surface Mount :
- No
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- THROUGH-HOLE
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Operating Temperature :
- -55°C~175°C TJ
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 100V
- Height :
- 9.15 mm
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 60A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 176W
- Supplier Device Package :
- TO-220AB
- Resistance :
- 18mOhm
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 37 ns
- Number of Terminals :
- 3
- Pulsed Drain Current-Max (IDM) :
- 180 A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.018 Ω
- Number of Pins :
- 3
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2650pF @ 25V
- DS Breakdown Voltage-Min :
- 100 V
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- + 175 C
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 40ns
- Drain Current-Max (Abs) (ID) :
- 60 A
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 176W (Tc)
- RoHS :
- Details
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 176W Tc
- Package :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max (Abs) :
- 176 W
- Lead Free :
- Lead Free
- Base Product Number :
- IXTP60
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Length :
- 10.66 mm
- Mount :
- Through Hole
- Brand :
- IXYS
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Width :
- 4.82 mm
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Drain to Source Breakdown Voltage :
- 100V
- Turn-Off Delay Time :
- 43 ns
- Channel Mode :
- Enhancement
- JESD-609 Code :
- e3
- Number of Channels :
- 1 Channel
- Tradename :
- HiPerFET
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- IXTP60N10T

N-Channel Tube 18m Ω @ 25A, 10V ±30V 2650pF @ 25V 49nC @ 10V 100V TO-220-3
IXTP60N10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2650pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.There is no drain current on this device since the maximum continuous current it can conduct is 60 A.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 180 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTP60N10T Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 180 A.
a 100V drain to source voltage (Vdss)
IXTP60N10T Applications
There are a lot of IXYS
IXTP60N10T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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