IXTP60N10T
- Mfr.Part #
- IXTP60N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A TO220AB
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Number of Terminals :
- 3
- Manufacturer :
- IXYS
- Transistor Type :
- 1 N-Channel
- FET Feature :
- --
- Resistance :
- 18mOhm
- DS Breakdown Voltage-Min :
- 100 V
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2650pF @ 25V
- Mounting Style :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 60 A
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 176 W
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Brand :
- IXYS
- Vgs (Max) :
- ±30V
- Product Status :
- Active
- Length :
- 10.66 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- JEDEC-95 Code :
- TO-220AB
- Transistor Polarity :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS :
- Details
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Tradename :
- HiPerFET
- Base Product Number :
- IXTP60
- Package :
- Tube
- Power Dissipation :
- 176W
- Supplier Device Package :
- TO-220AB
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 100V
- Drain-source On Resistance-Max :
- 0.018 Ω
- Power Dissipation-Max :
- 176W Tc
- Number of Channels :
- 1 Channel
- Rise Time :
- 40ns
- Drain to Source Breakdown Voltage :
- 100V
- Width :
- 4.82 mm
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 25A, 10V
- Power Dissipation (Max) :
- 176W (Tc)
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Configuration :
- Single
- Maximum Operating Temperature :
- + 175 C
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Terminal Form :
- THROUGH-HOLE
- Channel Mode :
- Enhancement
- Height :
- 9.15 mm
- Product Type :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Number of Terminations :
- 3
- Published :
- 2008
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 60A
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 180 A
- Case Connection :
- DRAIN
- Factory Lead Time :
- 24 Weeks
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 37 ns
- Turn-Off Delay Time :
- 43 ns
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Single
- Packaging :
- Tube
- Series :
- TrenchMV™
- Datasheets
- IXTP60N10T

N-Channel Tube 18m Ω @ 25A, 10V ±30V 2650pF @ 25V 49nC @ 10V 100V TO-220-3
IXTP60N10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2650pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.There is no drain current on this device since the maximum continuous current it can conduct is 60 A.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 180 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTP60N10T Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 180 A.
a 100V drain to source voltage (Vdss)
IXTP60N10T Applications
There are a lot of IXYS
IXTP60N10T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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