IXTP5N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

55 ns

Drain to Source Voltage (Vdss) :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

100W

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Pin Count :

3

Power Dissipation (Max) :

100W (Tc)

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

100W Tc

Voltage - Rated DC :

600V

Rds On (Max) @ Id, Vgs :

1.7 Ω @ 2.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Base Product Number :

IXTP5

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSFM-T3

Rise Time :

24ns

Lead Free :

Lead Free

Manufacturer :

IXYS Corporation

JESD-609 Code :

e3

Package :

Tube

FET Feature :

--

Product Status :

Obsolete

Terminal Form :

THROUGH-HOLE

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

5A

Fall Time (Typ) :

17 ns

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Number of Elements :

1

Package / Case :

TO-220-3

Mount :

Through Hole

FET Type :

N-Channel

Number of Terminals :

3

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

10A

Drain Current-Max (Abs) (ID) :

5A

Published :

2006

Qualification Status :

Not Qualified

Vgs (Max) :

±30V

Series :

PolarHV™

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

360 mJ

Vgs(th) (Max) @ Id :

5.5V @ 50μA

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current Rating :

5A

Drain-source On Resistance-Max :

1.7 Ω

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

600 V

Gate Charge (Qg) (Max) @ Vgs :

14.2nC @ 10V

Drain to Source Breakdown Voltage :

600V

Supplier Device Package :

TO-220AB

Transistor Application :

SWITCHING