IXTP5N60P
- Mfr.Part #
- IXTP5N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A TO220AB
- Stock
- 25,660
- In Stock :
- 25,660
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 24ns
- Pulsed Drain Current-Max (IDM) :
- 10A
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2006
- Terminal Position :
- Single
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Drain Current-Max (Abs) (ID) :
- 5A
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 1.7 Ω @ 2.5A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 360 mJ
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Base Product Number :
- IXTP5
- FET Feature :
- --
- Mount :
- Through Hole
- Current Rating :
- 5A
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 1.7 Ω
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- Product Status :
- Obsolete
- Turn-Off Delay Time :
- 55 ns
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Drain to Source Voltage (Vdss) :
- 600V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 14.2nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 17 ns
- Manufacturer :
- IXYS Corporation
- Power Dissipation-Max :
- 100W Tc
- Power Dissipation :
- 100W
- Supplier Device Package :
- TO-220AB
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 600V
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 5A
- Pin Count :
- 3
- Series :
- PolarHV™
- JEDEC-95 Code :
- TO-220AB
- Number of Terminals :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 25V
- Package :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- DS Breakdown Voltage-Min :
- 600 V
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 100W (Tc)
- Number of Elements :
- 1
- Datasheets
- IXTP5N60P

N-Channel Tube 1.7 Ω @ 2.5A, 10V ±30V 750pF @ 25V 14.2nC @ 10V 600V TO-220-3
IXTP5N60P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 360 mJ.The maximum input capacitance of this device is 750pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 55 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 10A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTP5N60P Features
the avalanche energy rating (Eas) is 360 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)
IXTP5N60P Applications
There are a lot of IXYS
IXTP5N60P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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