IXTP5N60P

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Mfr.Part #
IXTP5N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 5A TO220AB
Stock
25,660
In Stock :
25,660

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
Avalanche Energy Rating (Eas) :
360 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Voltage (Vdss) :
600V
Series :
PolarHV™
Fall Time (Typ) :
17 ns
Turn-Off Delay Time :
55 ns
Current Rating :
5A
Pin Count :
3
Power Dissipation (Max) :
100W (Tc)
Rise Time :
24ns
Voltage - Rated DC :
600V
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
600V
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
750pF @ 25V
Factory Lead Time :
8 Weeks
Lead Free :
Lead Free
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
14.2nC @ 10V
Element Configuration :
Single
JESD-609 Code :
e3
Surface Mount :
No
Pbfree Code :
yes
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Base Product Number :
IXTP5
Number of Terminations :
3
JEDEC-95 Code :
TO-220AB
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Status :
Obsolete
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
DS Breakdown Voltage-Min :
600 V
Number of Elements :
1
Drain-source On Resistance-Max :
1.7 Ω
RoHS Status :
RoHS Compliant
Supplier Device Package :
TO-220AB
Rds On (Max) @ Id, Vgs :
1.7 Ω @ 2.5A, 10V
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
10A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn)
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSFM-T3
Drain Current-Max (Abs) (ID) :
5A
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Power Dissipation-Max :
100W Tc
Power Dissipation :
100W
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
5A
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Published :
2006
Manufacturer :
IXYS Corporation
Number of Terminals :
3
Package / Case :
TO-220-3
FET Feature :
--
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP5N60P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, IXTP5N60P pinout, IXTP5N60P datasheet PDF, IXTP5N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP5N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP5N60P


N-Channel Tube 1.7 Ω @ 2.5A, 10V ±30V 750pF @ 25V 14.2nC @ 10V 600V TO-220-3

IXTP5N60P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 360 mJ.The maximum input capacitance of this device is 750pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 55 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 10A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTP5N60P Features


the avalanche energy rating (Eas) is 360 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)


IXTP5N60P Applications


There are a lot of IXYS
IXTP5N60P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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