IXTP5N50P

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Mfr.Part #
IXTP5N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 4.8A TO220AB
Stock
28,552
In Stock :
28,552

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 2.4A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
5A
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
4.8A Tc
Factory Lead Time :
8 Weeks
Continuous Drain Current (ID) :
4.8A
Additional Feature :
AVALANCHE RATED
Lead Free :
Lead Free
Product Status :
Obsolete
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Series :
PolarHV™
Vgs (Max) :
±30V
Drain-source On Resistance-Max :
1.4 Ω
Voltage - Rated DC :
500V
DS Breakdown Voltage-Min :
500 V
Case Connection :
DRAIN
JESD-30 Code :
R-PSFM-T3
Avalanche Energy Rating (Eas) :
250 mJ
Power Dissipation (Max) :
89W (Tc)
Terminal Finish :
Pure Tin (Sn)
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-220-3
Pulsed Drain Current-Max (IDM) :
10A
Fall Time (Typ) :
24 ns
FET Feature :
--
Turn-Off Delay Time :
65 ns
Gate Charge (Qg) (Max) @ Vgs :
12.6nC @ 10V
RoHS Status :
RoHS Compliant
JEDEC-95 Code :
TO-220AB
Terminal Form :
THROUGH-HOLE
Package :
Tube
Drain to Source Breakdown Voltage :
500V
Packaging :
Tube
Manufacturer :
IXYS Corporation
Power Dissipation-Max :
89W Tc
Operating Temperature :
-55°C~150°C TJ
Current Rating :
5A
Qualification Status :
Not Qualified
Number of Terminations :
3
Mount :
Through Hole
Number of Terminals :
3
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Element Configuration :
Single
Number of Pins :
3
Surface Mount :
No
Rise Time :
26ns
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Through Hole
Power Dissipation :
89W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXTP5
Number of Elements :
1
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Reach Compliance Code :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
620pF @ 25V
Published :
2006
Power Dissipation-Max (Abs) :
89 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-220AB
Gate to Source Voltage (Vgs) :
30V
Datasheets
IXTP5N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP5N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, IXTP5N50P pinout, IXTP5N50P datasheet PDF, IXTP5N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP5N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP5N50P


N-Channel Tube 1.4 Ω @ 2.4A, 10V ±30V 620pF @ 25V 12.6nC @ 10V 500V TO-220-3

IXTP5N50P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 620pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 10A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP5N50P Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 10A.
a 500V drain to source voltage (Vdss)


IXTP5N50P Applications


There are a lot of IXYS
IXTP5N50P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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