IXTP5N50P
- Mfr.Part #
- IXTP5N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.8A TO220AB
- Stock
- 28,552
- In Stock :
- 28,552
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 2.4A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 5A
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 4.8A Tc
- Factory Lead Time :
- 8 Weeks
- Continuous Drain Current (ID) :
- 4.8A
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Lead Free
- Product Status :
- Obsolete
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Series :
- PolarHV™
- Vgs (Max) :
- ±30V
- Drain-source On Resistance-Max :
- 1.4 Ω
- Voltage - Rated DC :
- 500V
- DS Breakdown Voltage-Min :
- 500 V
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSFM-T3
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Power Dissipation (Max) :
- 89W (Tc)
- Terminal Finish :
- Pure Tin (Sn)
- Polarity/Channel Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Pulsed Drain Current-Max (IDM) :
- 10A
- Fall Time (Typ) :
- 24 ns
- FET Feature :
- --
- Turn-Off Delay Time :
- 65 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 12.6nC @ 10V
- RoHS Status :
- RoHS Compliant
- JEDEC-95 Code :
- TO-220AB
- Terminal Form :
- THROUGH-HOLE
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 500V
- Packaging :
- Tube
- Manufacturer :
- IXYS Corporation
- Power Dissipation-Max :
- 89W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 5A
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Number of Pins :
- 3
- Surface Mount :
- No
- Rise Time :
- 26ns
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Power Dissipation :
- 89W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Base Product Number :
- IXTP5
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 620pF @ 25V
- Published :
- 2006
- Power Dissipation-Max (Abs) :
- 89 W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-220AB
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- IXTP5N50P

N-Channel Tube 1.4 Ω @ 2.4A, 10V ±30V 620pF @ 25V 12.6nC @ 10V 500V TO-220-3
IXTP5N50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 620pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 10A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTP5N50P Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 10A.
a 500V drain to source voltage (Vdss)
IXTP5N50P Applications
There are a lot of IXYS
IXTP5N50P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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