IXTP56N15T
- Mfr.Part #
- IXTP56N15T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 56A TO220AB
- Stock
- 3,415
- In Stock :
- 3,415
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Pin Count :
- 3
- Supplier Device Package :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 28A, 10V
- FET Type :
- N-Channel
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package :
- Tube
- Packaging :
- Tube
- Published :
- 2007
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Series :
- TrenchHV™
- Mounting Style :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 56A Tc
- Number of Pins :
- 3
- Tradename :
- HiPerFET
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXTP56
- Power Dissipation (Max) :
- 300W (Tc)
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 300W Tc
- Continuous Drain Current (ID) :
- 56A
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±30V
- Product Category :
- MOSFET
- Terminal Finish :
- TIN SILVER COPPER
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Product Type :
- MOSFET
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Product Status :
- Active
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 150V
- Pulsed Drain Current-Max (IDM) :
- 140A
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Drain to Source Voltage (Vdss) :
- 150V
- Factory Lead Time :
- 26 Weeks
- RoHS :
- Details
- Brand :
- IXYS
- Manufacturer :
- IXYS
- Datasheets
- IXTP56N15T

N-Channel Tube 36m Ω @ 28A, 10V ±30V 2250pF @ 25V 34nC @ 10V 150V TO-220-3
IXTP56N15T Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2250pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 56A continuous drain current (ID).Peak drain current is 140A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 150V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTP56N15T Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 56A
based on its rated peak drain current 140A.
a 150V drain to source voltage (Vdss)
IXTP56N15T Applications
There are a lot of IXYS
IXTP56N15T applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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