IXTP55N075T

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Mfr.Part #
IXTP55N075T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 75V 55A TO220AB
Stock
22,526
In Stock :
22,526

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
44 ns
Mounting Type :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Product Status :
Obsolete
Power Dissipation (Max) :
130W (Tc)
Rds On (Max) @ Id, Vgs :
19.5m Ω @ 27.5A, 10V
Packaging :
Tube
Fall Time (Typ) :
41 ns
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-220-3
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
75V
Manufacturer :
IXYS Corporation
JESD-30 Code :
R-PSFM-T3
DS Breakdown Voltage-Min :
85 V
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4V @ 25μA
Pin Count :
3
Series :
TrenchMV™
Power Dissipation-Max :
130W Tc
Base Product Number :
IXTP55
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Power Dissipation :
130W
Pbfree Code :
yes
Reach Compliance Code :
Compliant
Continuous Drain Current (ID) :
55A
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
Vgs (Max) :
±20V
Element Configuration :
Single
Terminal Form :
THROUGH-HOLE
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
3
Surface Mount :
No
ECCN Code :
EAR99
Drain-source On Resistance-Max :
0.023 Ω
Drain Current-Max (Abs) (ID) :
50A
Supplier Device Package :
TO-220AB
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Pulsed Drain Current-Max (IDM) :
130 A
Published :
2006
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
250 mJ
Transistor Application :
SWITCHING
FET Type :
N-Channel
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Drain to Source Breakdown Voltage :
75V
Rise Time :
50ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Package :
Tube
Number of Pins :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Feature :
--
JEDEC-95 Code :
TO-220AB
Number of Terminals :
3
Datasheets
IXTP55N075T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP55N075T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Number of Pins:3, IXTP55N075T pinout, IXTP55N075T datasheet PDF, IXTP55N075T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP55N075T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP55N075T


N-Channel Tube 19.5m Ω @ 27.5A, 10V ±20V 1400pF @ 25V 33nC @ 10V 75V TO-220-3

IXTP55N075T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 1400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 55A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 75V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 50A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 44 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 130 A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 75V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP55N075T Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 130 A.
a 75V drain to source voltage (Vdss)


IXTP55N075T Applications


There are a lot of IXYS
IXTP55N075T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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