IXTP52P10P

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Mfr.Part #
IXTP52P10P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 100V 52A TO220AB
Stock
1,765
In Stock :
1,765

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
PURE TIN
Type :
PolarP Power MOSFET
FET Feature :
--
Mounting Type :
Through Hole
Base Product Number :
IXTP52
Lead Free :
Lead Free
Power Dissipation (Max) :
300W (Tc)
Reach Compliance Code :
Unknown
Power Dissipation :
300W
Width :
4.83 mm
ECCN Code :
EAR99
Number of Terminations :
3
Brand :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
2845pF @ 25V
Product Status :
Active
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 150 C
Number of Channels :
1 Channel
Transistor Type :
1 P-Channel
JEDEC-95 Code :
TO-220AB
FET Type :
P-Channel
Number of Elements :
1
Case Connection :
DRAIN
Fall Time (Typ) :
22 ns
Transistor Application :
SWITCHING
RoHS :
Details
Supplier Device Package :
TO-220AB
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
100V
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Pin Count :
3
Mounting Style :
Through Hole
Factory Lead Time :
24 Weeks
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Polarity :
P-Channel
Qualification Status :
Not Qualified
Element Configuration :
Single
Tradename :
PolarP
RoHS Status :
ROHS3 Compliant
Published :
2008
Height :
16 mm
Drain to Source Breakdown Voltage :
-100V
JESD-30 Code :
R-PSFM-T3
Package / Case :
TO-220-3
Operating Temperature :
-55°C~150°C TJ
Rise Time :
29ns
Turn-Off Delay Time :
38 ns
Packaging :
Tube
Pbfree Code :
yes
Continuous Drain Current (ID) :
52A
Additional Feature :
AVALANCHE RATED
Rds On (Max) @ Id, Vgs :
50m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
JESD-609 Code :
e3
Series :
PolarP™
Length :
10.66 mm
Power Dissipation-Max :
300W Tc
Operating Mode :
ENHANCEMENT MODE
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
0.05Ohm
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Through Hole
Datasheets
IXTP52P10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP52P10P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarP Power MOSFET, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IXTP52P10P pinout, IXTP52P10P datasheet PDF, IXTP52P10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP52P10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP52P10P


P-Channel Tube 50m Ω @ 500mA, 10V ±20V 2845pF @ 25V 60nC @ 10V 100V TO-220-3

IXTP52P10P Overview


A device's maximum input capacitance is 2845pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 52A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-100V, and this device has a drain-to-source breakdown voltage of -100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 38 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP52P10P Features


a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 38 ns
a 100V drain to source voltage (Vdss)


IXTP52P10P Applications


There are a lot of IXYS
IXTP52P10P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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