IXTP50N20PM

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Drain to Source Breakdown Voltage :

200V

Pbfree Code :

yes

Power Dissipation-Max :

90W Tc

Drain to Source Voltage (Vdss) :

200V

Power Dissipation-Max (Abs) :

90 W

Turn-Off Delay Time :

70 ns

RoHS Status :

ROHS3 Compliant

Length :

10.66 mm

Case Connection :

Isolated

Transistor Type :

1 N-Channel

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Terminal Position :

Single

Supplier Device Package :

TO-220 Isolated Tab

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Configuration :

Single

Product Category :

MOSFET

Package :

Tube

Reach Compliance Code :

Compliant

Minimum Operating Temperature :

- 55 C

Pin Count :

3

FET Feature :

--

Product Type :

MOSFET

Element Configuration :

Single

Factory Lead Time :

24 Weeks

Number of Terminals :

3

Base Product Number :

IXTP50

Maximum Operating Temperature :

+ 175 C

DS Breakdown Voltage-Min :

200 V

Power Dissipation (Max) :

90W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

20A

Fall Time (Typ) :

30 ns

Input Capacitance (Ciss) (Max) @ Vds :

2720pF @ 25V

Packaging :

Tube

Power Dissipation :

90W

Drain-source On Resistance-Max :

0.06Ohm

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

120 A

Number of Terminations :

3

Product Status :

Active

Rise Time :

35ns

Width :

4.83 mm

Operating Mode :

ENHANCEMENT MODE

Series :

PolarHT™

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Brand :

IXYS

Drain Current-Max (Abs) (ID) :

20 A

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

1000 mJ

Height :

9.15 mm

Mounting Style :

Through Hole

Number of Elements :

1

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Transistor Polarity :

N-Channel

Surface Mount :

No

Gate to Source Voltage (Vgs) :

20V

RoHS :

Details

Rds On (Max) @ Id, Vgs :

60m Ω @ 25A, 10V

Published :

2008

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED