IXTP50N20PM
- Mfr.Part #
- IXTP50N20PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 20A TO220
- Stock
- 16,538
- In Stock :
- 16,538
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Compliant
- Published :
- 2008
- JESD-609 Code :
- e3
- Number of Channels :
- 1 Channel
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- MOSFET
- Power Dissipation (Max) :
- 90W (Tc)
- Element Configuration :
- Single
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Maximum Operating Temperature :
- + 175 C
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Height :
- 9.15 mm
- Terminal Finish :
- Matte Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Rise Time :
- 35ns
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±20V
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Minimum Operating Temperature :
- - 55 C
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- TO-220 Isolated Tab
- Factory Lead Time :
- 24 Weeks
- DS Breakdown Voltage-Min :
- 200 V
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 200V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 30 ns
- Mounting Style :
- Through Hole
- Case Connection :
- Isolated
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- Terminal Position :
- Single
- Width :
- 4.83 mm
- ECCN Code :
- EAR99
- Base Product Number :
- IXTP50
- Configuration :
- Single
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 70 ns
- JESD-30 Code :
- R-PSFM-T3
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max :
- 90W Tc
- Length :
- 10.66 mm
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 25A, 10V
- Number of Terminals :
- 3
- Pulsed Drain Current-Max (IDM) :
- 120 A
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2720pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 20A
- Power Dissipation-Max (Abs) :
- 90 W
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.06Ohm
- Drain Current-Max (Abs) (ID) :
- 20 A
- Power Dissipation :
- 90W
- Pbfree Code :
- yes
- Brand :
- IXYS
- Packaging :
- Tube
- Surface Mount :
- No
- Package :
- Tube
- Series :
- PolarHT™
- Drain to Source Breakdown Voltage :
- 200V
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Datasheets
- IXTP50N20PM
IXTP50N20PM Documents

N-Channel Tube 60m Ω @ 25A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
IXTP50N20PM Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2720pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 20 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 120 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTP50N20PM Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120 A.
a 200V drain to source voltage (Vdss)
IXTP50N20PM Applications
There are a lot of IXYS
IXTP50N20PM applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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