IXTP50N20PM

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Mfr.Part #
IXTP50N20PM
Manufacturer
Littelfuse
Package / Case
TO-220-3 Full Pack, Isolated Tab
Datasheet
Download
Description
MOSFET N-CH 200V 20A TO220
Stock
16,538
In Stock :
16,538

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Published :
2008
JESD-609 Code :
e3
Number of Channels :
1 Channel
RoHS Status :
ROHS3 Compliant
Product Category :
MOSFET
Power Dissipation (Max) :
90W (Tc)
Element Configuration :
Single
Pin Count :
3
Mounting Type :
Through Hole
Maximum Operating Temperature :
+ 175 C
Avalanche Energy Rating (Eas) :
1000 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Height :
9.15 mm
Terminal Finish :
Matte Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Rise Time :
35ns
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±20V
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Minimum Operating Temperature :
- 55 C
Operating Temperature :
-55°C~175°C TJ
Terminal Form :
THROUGH-HOLE
Supplier Device Package :
TO-220 Isolated Tab
Factory Lead Time :
24 Weeks
DS Breakdown Voltage-Min :
200 V
FET Type :
N-Channel
Transistor Application :
SWITCHING
RoHS :
Details
Product Type :
MOSFET
Drain to Source Voltage (Vdss) :
200V
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
30 ns
Mounting Style :
Through Hole
Case Connection :
Isolated
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Status :
Active
Terminal Position :
Single
Width :
4.83 mm
ECCN Code :
EAR99
Base Product Number :
IXTP50
Configuration :
Single
Mount :
Through Hole
Turn-Off Delay Time :
70 ns
JESD-30 Code :
R-PSFM-T3
Transistor Type :
1 N-Channel
Power Dissipation-Max :
90W Tc
Length :
10.66 mm
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
60m Ω @ 25A, 10V
Number of Terminals :
3
Pulsed Drain Current-Max (IDM) :
120 A
Package / Case :
TO-220-3 Full Pack, Isolated Tab
Manufacturer :
IXYS
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds :
2720pF @ 25V
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JEDEC-95 Code :
TO-220AB
Continuous Drain Current (ID) :
20A
Power Dissipation-Max (Abs) :
90 W
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
0.06Ohm
Drain Current-Max (Abs) (ID) :
20 A
Power Dissipation :
90W
Pbfree Code :
yes
Brand :
IXYS
Packaging :
Tube
Surface Mount :
No
Package :
Tube
Series :
PolarHT™
Drain to Source Breakdown Voltage :
200V
Additional Feature :
AVALANCHE RATED
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP50N20PM from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Package / Case:TO-220-3 Full Pack, Isolated Tab, IXTP50N20PM pinout, IXTP50N20PM datasheet PDF, IXTP50N20PM amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP50N20PM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP50N20PM


N-Channel Tube 60m Ω @ 25A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab

IXTP50N20PM Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2720pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 20 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 120 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTP50N20PM Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120 A.
a 200V drain to source voltage (Vdss)


IXTP50N20PM Applications


There are a lot of IXYS
IXTP50N20PM applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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