IXTP50N20P
- Mfr.Part #
- IXTP50N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 50A TO220AB
- Stock
- 300
- In Stock :
- 300
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 50 A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 35ns
- Continuous Drain Current (ID) :
- 50A
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- -55 °C
- Factory Lead Time :
- 24 Weeks
- Pin Count :
- 3
- Surface Mount :
- No
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 200V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Height :
- 9.15mm
- Maximum Operating Temperature :
- +175 °C
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 50A, 10V
- JEDEC-95 Code :
- TO-220AB
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 120A
- Number of Terminals :
- 3
- Power Dissipation :
- 360W
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 360W (Tc)
- Width :
- 4.83mm
- Supplier Device Package :
- TO-220AB
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Through Hole
- Fall Time (Typ) :
- 30 ns
- Terminal Form :
- THROUGH-HOLE
- Channel Type :
- N
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 200 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2720pF @ 25V
- Power Dissipation-Max :
- 360W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Brand :
- IXYS
- Number of Elements :
- 1
- Turn On Delay Time :
- 26 ns
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.06Ohm
- Product Category :
- MOSFET
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSFM-T3
- Continuous Drain Current Id :
- 50A
- Turn-Off Delay Time :
- 70 ns
- Power Dissipation-Max (Abs) :
- 360 W
- Published :
- 2008
- RoHS :
- Details
- JESD-609 Code :
- e3
- Series :
- PolarHT™
- Lead Free :
- Lead Free
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Reach Compliance Code :
- Compliant
- Number of Pins :
- 3
- Manufacturer :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- 1 N-Channel
- Package Type :
- TO-220
- Transistor Element Material :
- SILICON
- Length :
- 10.66mm
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-220-3
- Product Status :
- Active
- Qualification :
- -
- Number of Elements per Chip :
- 1
- Channel Mode :
- Enhancement
- Additional Feature :
- AVALANCHE RATED
- Transistor Polarity :
- N-Channel
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXTP50
- Datasheets
- IXTP50N20P

N-Channel Tube 60m Ω @ 50A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-220-3
IXTP50N20P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2720pF @ 25V.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=200V, the drain-source breakdown voltage is 200V.A device's drain current is its maximum continuous current, and this device's drain current is 50 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 120A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 26 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 200 V.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTP50N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120A.
a 200V drain to source voltage (Vdss)
IXTP50N20P Applications
There are a lot of IXYS
IXTP50N20P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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