IXTP4N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

60 ns

Power Dissipation-Max :

100W Tc

Number of Terminations :

3

Channel Mode :

Enhancement

Terminal Position :

Single

Maximum Operating Temperature :

+ 150 C

Transistor Type :

1 N-Channel

Operating Mode :

ENHANCEMENT MODE

Product Category :

MOSFET

Min Operating Temperature :

-55 °C

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

800 V

Package :

Tube

Package / Case :

TO-220-3

Length :

10.66 mm

Package Shape :

RECTANGULAR

Drain to Source Resistance :

3 Ω

Power Dissipation :

100W

Height :

9.15 mm

Transistor Polarity :

N-Channel

JESD-609 Code :

e3

Number of Channels :

1 Channel

Polarity/Channel Type :

N-Channel

Threshold Voltage :

5.5V

Gate Charge (Qg) (Max) @ Vgs :

14.2nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Number of Terminals :

3

Mounting Type :

Through Hole

Case Connection :

DRAIN

Max Operating Temperature :

150 °C

Series :

PolarHV™

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

5.5V @ 100μA

Subcategory :

MOSFETs

Rds On Max :

3.4 Ω

Fall Time (Typ) :

29 ns

Input Capacitance :

750 pF

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

3.4 Ω

Continuous Drain Current (ID) :

3.6A

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-220AB

ECCN Code :

EAR99

Number of Elements :

1

Element Configuration :

Single

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V

Product Status :

Active

Power Dissipation (Max) :

100W (Tc)

Mount :

Through Hole

Configuration :

Single

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 500mA, 10V

Reach Compliance Code :

Compliant

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

24 Weeks

Transistor Application :

SWITCHING

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

Drain to Source Voltage (Vdss) :

800 V

Manufacturer :

IXYS

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Width :

4.82 mm

RoHS :

Compliant

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

8A

Terminal Finish :

Matte Tin (Sn)

Rise Time :

24ns

Base Product Number :

IXTP4

Published :

2004

Lead Free :

Lead Free

Brand :

IXYS

Avalanche Energy Rating (Eas) :

250 mJ

Max Power Dissipation :

100 W

Drain to Source Breakdown Voltage :

800V