IXTP4N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PolarHV™

Transistor Polarity :

N-Channel

Mount :

Through Hole

REACH SVHC :

No SVHC

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

60 ns

Packaging :

Tube

Qualification Status :

Not Qualified

Power Dissipation :

100W

Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Pin Count :

3

Power Dissipation-Max :

100W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

100 W

Factory Lead Time :

24 Weeks

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

JESD-609 Code :

e3

Product Type :

MOSFET

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Element Configuration :

Single

Number of Channels :

1 Channel

Width :

4.82 mm

Threshold Voltage :

5.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2004

Mounting Style :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

800 V

Power Dissipation (Max) :

100W (Tc)

Minimum Operating Temperature :

- 55 C

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Height :

9.15 mm

Gate Charge (Qg) (Max) @ Vgs :

14.2nC @ 10V

Case Connection :

DRAIN

Lead Free :

Lead Free

Length :

10.66 mm

Vgs (Max) :

±30V

Surface Mount :

No

Manufacturer :

IXYS

Terminal Position :

Single

ECCN Code :

EAR99

Maximum Operating Temperature :

+ 150 C

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Supplier Device Package :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Resistance :

3 Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Rise Time :

24ns

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Package :

Tube

Drain to Source Breakdown Voltage :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

800 V

Vgs(th) (Max) @ Id :

5.5V @ 100μA

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 500mA, 10V

Pulsed Drain Current-Max (IDM) :

8A

Base Product Number :

IXTP4

Number of Elements :

1

Product Status :

Active

Polarity/Channel Type :

N-Channel

Number of Terminals :

3

Drain-source On Resistance-Max :

3.4 Ω

Avalanche Energy Rating (Eas) :

250 mJ

RoHS :

Compliant

Fall Time (Typ) :

29 ns

Subcategory :

MOSFETs

Rds On Max :

3.4 Ω

Terminal Form :

THROUGH-HOLE

Min Operating Temperature :

-55 °C

Input Capacitance :

750 pF

Product Category :

MOSFET

Continuous Drain Current (ID) :

3.6A

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

Number of Terminations :

3

Max Operating Temperature :

150 °C

FET Feature :

--

Transistor Type :

1 N-Channel

Pbfree Code :

yes