IXTP4N60P

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Mfr.Part #
IXTP4N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 4A TO220AB
Stock
2,739
In Stock :
2,739

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Power Dissipation :
89W
Input Capacitance (Ciss) (Max) @ Vds :
635pF @ 25V
Terminal Finish :
Matte Tin (Sn)
FET Type :
N-Channel
JEDEC-95 Code :
TO-220AB
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Element Configuration :
Single
Current Rating :
4A
Series :
PolarHV™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS Corporation
Case Connection :
DRAIN
RoHS Status :
RoHS Compliant
Number of Terminals :
3
JESD-30 Code :
R-PSFM-T3
Drain to Source Breakdown Voltage :
600V
Voltage - Rated DC :
600V
Qualification Status :
Not Qualified
Number of Elements :
1
Number of Terminations :
3
Factory Lead Time :
8 Weeks
Power Dissipation (Max) :
89W (Tc)
Base Product Number :
IXTP4
Current - Continuous Drain (Id) @ 25°C :
4A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code :
e3
Pin Count :
3
Package :
Tube
Package Shape :
RECTANGULAR
Supplier Device Package :
TO-220AB
Drain-source On Resistance-Max :
2Ohm
Rds On (Max) @ Id, Vgs :
2 Ω @ 2A, 10V
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
150 mJ
Additional Feature :
AVALANCHE RATED
Fall Time (Typ) :
20 ns
FET Feature :
--
DS Breakdown Voltage-Min :
600 V
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
10A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Continuous Drain Current (ID) :
4A
Reach Compliance Code :
Compliant
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Published :
2006
Vgs(th) (Max) @ Id :
5.5V @ 100μA
Rise Time :
10ns
Product Status :
Obsolete
Gate to Source Voltage (Vgs) :
30V
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
600V
Terminal Position :
Single
Package / Case :
TO-220-3
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
4A
Turn-Off Delay Time :
50 ns
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±30V
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Pbfree Code :
yes
Power Dissipation-Max :
89W Tc
Datasheets
IXTP4N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP4N60P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, IXTP4N60P pinout, IXTP4N60P datasheet PDF, IXTP4N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP4N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP4N60P


N-Channel Tube 2 Ω @ 2A, 10V ±30V 635pF @ 25V 13nC @ 10V 600V TO-220-3

IXTP4N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 635pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [4A] according to its drain current.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 10A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP4N60P Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)


IXTP4N60P Applications


There are a lot of IXYS
IXTP4N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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