IXTP4N60P

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Mfr.Part #
IXTP4N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 4A TO220AB
Stock
2,739
In Stock :
2,739

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Base Product Number :
IXTP4
Turn-Off Delay Time :
50 ns
Power Dissipation (Max) :
89W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
--
Package :
Tube
Fall Time (Typ) :
20 ns
Factory Lead Time :
8 Weeks
Number of Elements :
1
Manufacturer :
IXYS Corporation
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
89W
FET Type :
N-Channel
Pbfree Code :
yes
RoHS Status :
RoHS Compliant
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
4A
JESD-609 Code :
e3
Supplier Device Package :
TO-220AB
Surface Mount :
No
Operating Temperature :
-55°C~150°C TJ
Current Rating :
4A
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
3
Power Dissipation-Max :
89W Tc
Pin Count :
3
Drain to Source Voltage (Vdss) :
600V
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
150 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
PolarHV™
Transistor Application :
SWITCHING
Product Status :
Obsolete
Current - Continuous Drain (Id) @ 25°C :
4A Tc
Package Shape :
RECTANGULAR
Vgs (Max) :
±30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
2Ohm
Input Capacitance (Ciss) (Max) @ Vds :
635pF @ 25V
Package / Case :
TO-220-3
Additional Feature :
AVALANCHE RATED
Mount :
Through Hole
Voltage - Rated DC :
600V
Pulsed Drain Current-Max (IDM) :
10A
Continuous Drain Current (ID) :
4A
Terminal Finish :
Matte Tin (Sn)
Published :
2006
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs(th) (Max) @ Id :
5.5V @ 100μA
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
2 Ω @ 2A, 10V
JEDEC-95 Code :
TO-220AB
Case Connection :
DRAIN
Number of Terminations :
3
Drain to Source Breakdown Voltage :
600V
Gate to Source Voltage (Vgs) :
30V
DS Breakdown Voltage-Min :
600 V
Rise Time :
10ns
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXTP4N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP4N60P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, IXTP4N60P pinout, IXTP4N60P datasheet PDF, IXTP4N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP4N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP4N60P


N-Channel Tube 2 Ω @ 2A, 10V ±30V 635pF @ 25V 13nC @ 10V 600V TO-220-3

IXTP4N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 635pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [4A] according to its drain current.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 10A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP4N60P Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)


IXTP4N60P Applications


There are a lot of IXYS
IXTP4N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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