IXTP4N60P
- Mfr.Part #
- IXTP4N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4A TO220AB
- Stock
- 2,739
- In Stock :
- 2,739
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Power Dissipation :
- 89W
- Input Capacitance (Ciss) (Max) @ Vds :
- 635pF @ 25V
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Current Rating :
- 4A
- Series :
- PolarHV™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS Corporation
- Case Connection :
- DRAIN
- RoHS Status :
- RoHS Compliant
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Breakdown Voltage :
- 600V
- Voltage - Rated DC :
- 600V
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Factory Lead Time :
- 8 Weeks
- Power Dissipation (Max) :
- 89W (Tc)
- Base Product Number :
- IXTP4
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Package :
- Tube
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-220AB
- Drain-source On Resistance-Max :
- 2Ohm
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 2A, 10V
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Additional Feature :
- AVALANCHE RATED
- Fall Time (Typ) :
- 20 ns
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 600 V
- Terminal Form :
- THROUGH-HOLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 10A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 4A
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- Published :
- 2006
- Vgs(th) (Max) @ Id :
- 5.5V @ 100μA
- Rise Time :
- 10ns
- Product Status :
- Obsolete
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 600V
- Terminal Position :
- Single
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 4A
- Turn-Off Delay Time :
- 50 ns
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 89W Tc
- Datasheets
- IXTP4N60P

N-Channel Tube 2 Ω @ 2A, 10V ±30V 635pF @ 25V 13nC @ 10V 600V TO-220-3
IXTP4N60P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 635pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [4A] according to its drain current.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 10A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP4N60P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)
IXTP4N60P Applications
There are a lot of IXYS
IXTP4N60P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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