IXTP450P2
- Mfr.Part #
- IXTP450P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO220AB
- Stock
- 3,847
- In Stock :
- 3,847
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Factory Lead Time :
- 24 Weeks
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Radiation Hardening :
- No
- Package :
- Tube
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Tradename :
- Polar2 HiPerFET
- Drain-source On Resistance-Max :
- 0.33 Ω
- Vgs (Max) :
- ±30V
- Polarity/Channel Type :
- N-Channel
- Configuration :
- Single
- Series :
- PolarP2™
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 16 A
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Published :
- 2011
- Pin Count :
- 3
- Base Product Number :
- IXTP450
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 500V
- Channel Mode :
- Enhancement
- Product Type :
- MOSFET
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 16A
- Power Dissipation (Max) :
- 300W (Tc)
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Number of Channels :
- 1 Channel
- Minimum Operating Temperature :
- - 55 C
- DS Breakdown Voltage-Min :
- 500 V
- Power Dissipation-Max (Abs) :
- 300 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Type :
- PolarP2 Power MOSFET
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Power Dissipation-Max :
- 300W Tc
- Transistor Type :
- 1 N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Transistor Polarity :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Supplier Device Package :
- TO-220AB
- Avalanche Energy Rating (Eas) :
- 750 mJ
- FET Feature :
- --
- RoHS :
- Details
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminals :
- 3
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 8A, 10V
- Manufacturer :
- IXYS
- Power Dissipation :
- 300W
- Reach Compliance Code :
- Compliant
- Mounting Style :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Active
- Datasheets
- IXTP450P2

N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-220-3
IXTP450P2 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.16 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 35 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP450P2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)
IXTP450P2 Applications
There are a lot of IXYS
IXTP450P2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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