IXTP450P2
- Mfr.Part #
- IXTP450P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO220AB
- Stock
- 3,847
- In Stock :
- 3,847
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max (Abs) :
- 300 W
- Factory Lead Time :
- 24 Weeks
- Drain-source On Resistance-Max :
- 0.33 Ω
- Power Dissipation (Max) :
- 300W (Tc)
- Mounting Style :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Channel Mode :
- Enhancement
- Drain Current-Max (Abs) (ID) :
- 16 A
- Power Dissipation :
- 300W
- Power Dissipation-Max :
- 300W Tc
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Configuration :
- Single
- Series :
- PolarP2™
- Brand :
- IXYS
- Manufacturer :
- IXYS
- Drain to Source Breakdown Voltage :
- 500V
- Case Connection :
- DRAIN
- Package :
- Tube
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 8A, 10V
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 500 V
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Number of Terminals :
- 3
- Product Category :
- MOSFET
- Product Status :
- Active
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Minimum Operating Temperature :
- - 55 C
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Base Product Number :
- IXTP450
- FET Feature :
- --
- Supplier Device Package :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Avalanche Energy Rating (Eas) :
- 750 mJ
- RoHS :
- Details
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Type :
- PolarP2 Power MOSFET
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- Tradename :
- Polar2 HiPerFET
- JESD-30 Code :
- R-PSFM-T3
- Continuous Drain Current (ID) :
- 16A
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Packaging :
- Tube
- Surface Mount :
- No
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Number of Channels :
- 1 Channel
- Datasheets
- IXTP450P2

N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-220-3
IXTP450P2 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.16 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 35 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP450P2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)
IXTP450P2 Applications
There are a lot of IXYS
IXTP450P2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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