IXTP450P2

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Mfr.Part #
IXTP450P2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO220AB
Stock
3,847
In Stock :
3,847

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Package / Case :
TO-220-3
Factory Lead Time :
24 Weeks
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Radiation Hardening :
No
Package :
Tube
Product Category :
MOSFET
Transistor Element Material :
SILICON
Tradename :
Polar2 HiPerFET
Drain-source On Resistance-Max :
0.33 Ω
Vgs (Max) :
±30V
Polarity/Channel Type :
N-Channel
Configuration :
Single
Series :
PolarP2™
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
16 A
Number of Pins :
3
Lead Free :
Lead Free
Published :
2011
Pin Count :
3
Base Product Number :
IXTP450
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
500V
Channel Mode :
Enhancement
Product Type :
MOSFET
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
16A
Power Dissipation (Max) :
300W (Tc)
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
JEDEC-95 Code :
TO-220AB
Mount :
Through Hole
Number of Channels :
1 Channel
Minimum Operating Temperature :
- 55 C
DS Breakdown Voltage-Min :
500 V
Power Dissipation-Max (Abs) :
300 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Case Connection :
DRAIN
Type :
PolarP2 Power MOSFET
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
35 A
Power Dissipation-Max :
300W Tc
Transistor Type :
1 N-Channel
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Transistor Polarity :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Supplier Device Package :
TO-220AB
Avalanche Energy Rating (Eas) :
750 mJ
FET Feature :
--
RoHS :
Details
Transistor Application :
SWITCHING
Terminal Form :
THROUGH-HOLE
Gate to Source Voltage (Vgs) :
30V
Number of Terminals :
3
Rds On (Max) @ Id, Vgs :
330m Ω @ 8A, 10V
Manufacturer :
IXYS
Power Dissipation :
300W
Reach Compliance Code :
Compliant
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
2530pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
500V
Brand :
IXYS
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Maximum Operating Temperature :
+ 150 C
Product Status :
Active
Datasheets
IXTP450P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP450P2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Type:PolarP2 Power MOSFET, Number of Terminations:3, Mounting Type:Through Hole, IXTP450P2 pinout, IXTP450P2 datasheet PDF, IXTP450P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP450P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP450P2


N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-220-3

IXTP450P2 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.16 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 35 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP450P2 Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35 A.
a 500V drain to source voltage (Vdss)


IXTP450P2 Applications


There are a lot of IXYS
IXTP450P2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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