IXTP44N10T

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Mfr.Part #
IXTP44N10T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 44A TO220AB
Stock
250
In Stock :
250

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Power Dissipation (Max) :
130W (Tc)
Terminal Finish :
PURE TIN
Power Dissipation-Max :
130W Tc
Minimum Operating Temperature :
- 55 C
Number of Terminations :
3
Fall Time (Typ) :
32 ns
Transistor Type :
1 N-Channel
Number of Elements :
1
Product Type :
MOSFET
Width :
4.83 mm
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
100V
Length :
10.66 mm
Avalanche Energy Rating (Eas) :
250 mJ
Package :
Tube
Channel Mode :
Enhancement
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
4.5V @ 25μA
FET Type :
N-Channel
Series :
TrenchMV™
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1262pF @ 25V
FET Feature :
--
Product Category :
MOSFET
Power Dissipation :
130W
Number of Channels :
1 Channel
Mounting Style :
Through Hole
RoHS :
Details
Vgs (Max) :
±30V
Factory Lead Time :
24 Weeks
Supplier Device Package :
TO-220AB
Packaging :
Tube
ECCN Code :
EAR99
Rise Time :
47ns
Published :
2006
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Maximum Operating Temperature :
+ 175 C
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-220AB
Height :
9.15 mm
Turn-Off Delay Time :
36 ns
Transistor Application :
SWITCHING
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
30m Ω @ 22A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Manufacturer :
IXYS
RoHS Status :
ROHS3 Compliant
Base Product Number :
IXTP44
Continuous Drain Current (ID) :
44A
Tradename :
HiPerFET
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.03Ohm
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
Single
Brand :
IXYS
JESD-30 Code :
R-PSFM-T3
Drain to Source Voltage (Vdss) :
100V
Package / Case :
TO-220-3
Reach Compliance Code :
Unknown
Datasheets
IXTP44N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP44N10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, IXTP44N10T pinout, IXTP44N10T datasheet PDF, IXTP44N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP44N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP44N10T


N-Channel Tube 30m Ω @ 22A, 10V ±30V 1262pF @ 25V 33nC @ 10V 100V TO-220-3

IXTP44N10T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 250 mJ.A device's maximum input capacitance is 1262pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 36 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP44N10T Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 36 ns
a 100V drain to source voltage (Vdss)


IXTP44N10T Applications


There are a lot of IXYS
IXTP44N10T applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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