IXTP42N25P

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Mfr.Part #
IXTP42N25P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 250V 42A TO220AB
Stock
6,450
In Stock :
6,450

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-220AB
Series :
PolarHT™
Number of Terminals :
3
Base Product Number :
IXTP42
Transistor Polarity :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Drain to Source Breakdown Voltage :
250V
Height :
16 mm
Product Category :
MOSFET
MSL :
-
Terminal Position :
Single
Surface Mount :
No
Reach Compliance Code :
Compliant
Package :
Tube
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max :
300W Tc
Threshold Voltage :
5.5V
Continuous Drain Current Id :
42A
Operating Temperature :
-55°C~150°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Type :
MOSFET
Package / Case :
TO-220-3
Pbfree Code :
yes
Terminal Finish :
Matte Tin (Sn)
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Configuration :
Single
Element Configuration :
Single
Transistor Type :
1 N-Channel
Published :
2004
Additional Feature :
AVALANCHE RATED
Resistance :
84mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Maximum Operating Temperature :
+ 150 C
Transistor Element Material :
SILICON
Factory Lead Time :
24 Weeks
FET Feature :
--
Mounting Style :
Through Hole
Avalanche Energy Rating (Eas) :
1000 mJ
Number of Elements :
1
Fall Time (Typ) :
30 ns
Rise Time :
28ns
Lead Free :
Lead Free
Turn-Off Delay Time :
81 ns
Case Connection :
DRAIN
Power Dissipation (Max) :
300W (Tc)
Continuous Drain Current (ID) :
42A
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Number of Pins :
3
JESD-609 Code :
e3
Vgs (Max) :
±20V
Number of Channels :
1 Channel
Mounting Type :
Through Hole
REACH SVHC :
No SVHC
Width :
4.83 mm
Tradename :
PolarHT
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.084 Ω
Brand :
IXYS
Qualification :
-
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Length :
10.66 mm
Type :
PolarHT Power MOSFET
Minimum Operating Temperature :
- 55 C
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Pulsed Drain Current-Max (IDM) :
110A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
84m Ω @ 500mA, 10V
Manufacturer :
IXYS
Product Status :
Active
JEDEC-95 Code :
TO-220AB
DS Breakdown Voltage-Min :
250 V
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Mount :
Through Hole
Drain to Source Voltage (Vdss) :
250V
Channel Type :
N Channel
Subcategory :
MOSFETs
Qualification Status :
Not Qualified
Terminal Form :
THROUGH-HOLE
Channel Mode :
Enhancement
RoHS :
Details
Power Dissipation :
300W
Package Shape :
RECTANGULAR
Datasheets
IXTP42N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP42N25P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Type:PolarHT Power MOSFET, IXTP42N25P pinout, IXTP42N25P datasheet PDF, IXTP42N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP42N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP42N25P


N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V 250V TO-220-3

IXTP42N25P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 42A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 81 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTP42N25P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 110A.
a threshold voltage of 5.5V
a 250V drain to source voltage (Vdss)


IXTP42N25P Applications


There are a lot of IXYS
IXTP42N25P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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