IXTP42N25P
- Mfr.Part #
- IXTP42N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 42A TO220AB
- Stock
- 6,450
- In Stock :
- 6,450
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-220AB
- Series :
- PolarHT™
- Number of Terminals :
- 3
- Base Product Number :
- IXTP42
- Transistor Polarity :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Drain to Source Breakdown Voltage :
- 250V
- Height :
- 16 mm
- Product Category :
- MOSFET
- MSL :
- -
- Terminal Position :
- Single
- Surface Mount :
- No
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 300W Tc
- Threshold Voltage :
- 5.5V
- Continuous Drain Current Id :
- 42A
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Type :
- MOSFET
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Element Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Published :
- 2004
- Additional Feature :
- AVALANCHE RATED
- Resistance :
- 84mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 150 C
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 24 Weeks
- FET Feature :
- --
- Mounting Style :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Number of Elements :
- 1
- Fall Time (Typ) :
- 30 ns
- Rise Time :
- 28ns
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 81 ns
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 300W (Tc)
- Continuous Drain Current (ID) :
- 42A
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Width :
- 4.83 mm
- Tradename :
- PolarHT
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.084 Ω
- Brand :
- IXYS
- Qualification :
- -
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2300pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.66 mm
- Type :
- PolarHT Power MOSFET
- Minimum Operating Temperature :
- - 55 C
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 110A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 84m Ω @ 500mA, 10V
- Manufacturer :
- IXYS
- Product Status :
- Active
- JEDEC-95 Code :
- TO-220AB
- DS Breakdown Voltage-Min :
- 250 V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 250V
- Channel Type :
- N Channel
- Subcategory :
- MOSFETs
- Qualification Status :
- Not Qualified
- Terminal Form :
- THROUGH-HOLE
- Channel Mode :
- Enhancement
- RoHS :
- Details
- Power Dissipation :
- 300W
- Package Shape :
- RECTANGULAR
- Datasheets
- IXTP42N25P

N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V 250V TO-220-3
IXTP42N25P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 42A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 81 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTP42N25P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 110A.
a threshold voltage of 5.5V
a 250V drain to source voltage (Vdss)
IXTP42N25P Applications
There are a lot of IXYS
IXTP42N25P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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