IXTP42N15T
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- Mfr.Part #
- IXTP42N15T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 42A TO220AB
- Stock
- 35,233
- In Stock ：
- 35,233
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Product Status :
- Active
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.045Ohm
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 500mA, 10V
- DS Breakdown Voltage-Min :
- 150V
- Base Product Number :
- IXTP42
- Power Dissipation (Max) :
- 200W (Tc)
- Continuous Drain Current (ID) :
- 42A
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 100A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 150V
- FET Feature :
- --
- Brand :
- IXYS
- JEDEC-95 Code :
- TO-220AB
- Supplier Device Package :
- TO-220AB
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Polarity :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1880pF @ 25V
- Mounting Style :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±30V
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- TrenchHV™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- RoHS :
- Details
- Tradename :
- HiPerFET
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Avalanche Energy Rating (Eas) :
- 400 mJ
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 200W Tc
- Published :
- 2008
- Datasheets
- IXTP42N15T
N-Channel Tube 45m Ω @ 500mA, 10V ±30V 1880pF @ 25V 21nC @ 10V 150V TO-220-3
IXTP42N15T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 400 mJ.A device's maximal input capacitance is 1880pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 42A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 150V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTP42N15T Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 42A
based on its rated peak drain current 100A.
a 150V drain to source voltage (Vdss)
IXTP42N15T Applications
There are a lot of IXYS
IXTP42N15T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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