IXTP3N60P
- Mfr.Part #
- IXTP3N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3A TO220AB
- Stock
- 21
- In Stock :
- 21
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTP3
- Gate to Source Voltage (Vgs) :
- 30V
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±30V
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 3A
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- FET Feature :
- --
- Turn-Off Delay Time :
- 58 ns
- Terminal Form :
- THROUGH-HOLE
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 6A
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS Corporation
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 9.8nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 100 mJ
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Published :
- 2004
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- DS Breakdown Voltage-Min :
- 600 V
- Drain to Source Breakdown Voltage :
- 600V
- Series :
- PolarHV™
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 70W Tc
- Power Dissipation :
- 70W
- Drain Current-Max (Abs) (ID) :
- 3A
- Input Capacitance (Ciss) (Max) @ Vds :
- 411pF @ 25V
- Rise Time :
- 25ns
- Current Rating :
- 3A
- Number of Terminals :
- 3
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Voltage - Rated DC :
- 600V
- Surface Mount :
- No
- Threshold Voltage :
- 5.5V
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 70W (Tc)
- Terminal Finish :
- Matte Tin (Sn)
- Product Status :
- Obsolete
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- Fall Time (Typ) :
- 22 ns
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 2.9 Ω
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 2.9 Ω @ 500mA, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- RoHS Compliant
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Supplier Device Package :
- TO-220AB
- Datasheets
- IXTP3N60P

N-Channel Tube 2.9 Ω @ 500mA, 10V ±30V 411pF @ 25V 9.8nC @ 10V 600V TO-220-3
IXTP3N60P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 411pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [3A] according to its drain current.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5.5V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP3N60P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 6A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)
IXTP3N60P Applications
There are a lot of IXYS
IXTP3N60P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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