IXTP3N60P

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Mfr.Part #
IXTP3N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 3A TO220AB
Stock
21
In Stock :
21

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
3A
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
9.8nC @ 10V
FET Type :
N-Channel
Current Rating :
3A
Threshold Voltage :
5.5V
Lead Free :
Lead Free
Continuous Drain Current (ID) :
3A
Gate to Source Voltage (Vgs) :
30V
Voltage - Rated DC :
600V
Published :
2004
Number of Terminations :
3
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Surface Mount :
No
Package Shape :
RECTANGULAR
Factory Lead Time :
8 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
411pF @ 25V
Qualification Status :
Not Qualified
ECCN Code :
EAR99
JEDEC-95 Code :
TO-220AB
Rds On (Max) @ Id, Vgs :
2.9 Ω @ 500mA, 10V
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
100 mJ
JESD-30 Code :
R-PSFM-T3
Series :
PolarHV™
RoHS Status :
RoHS Compliant
Number of Elements :
1
Fall Time (Typ) :
22 ns
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Pulsed Drain Current-Max (IDM) :
6A
Base Product Number :
IXTP3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
600V
Element Configuration :
Single
FET Feature :
--
Power Dissipation-Max :
70W Tc
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
DS Breakdown Voltage-Min :
600 V
Additional Feature :
AVALANCHE RATED
Drain-source On Resistance-Max :
2.9 Ω
Mounting Type :
Through Hole
Pin Count :
3
Terminal Form :
THROUGH-HOLE
Number of Terminals :
3
JESD-609 Code :
e3
Case Connection :
DRAIN
Terminal Finish :
Matte Tin (Sn)
Mount :
Through Hole
Product Status :
Obsolete
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-220-3
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Reach Compliance Code :
Compliant
Vgs (Max) :
±30V
Turn-Off Delay Time :
58 ns
Supplier Device Package :
TO-220AB
Manufacturer :
IXYS Corporation
Power Dissipation (Max) :
70W (Tc)
Power Dissipation :
70W
Rise Time :
25ns
Drain to Source Breakdown Voltage :
600V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXTP3N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, IXTP3N60P pinout, IXTP3N60P datasheet PDF, IXTP3N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP3N60P


N-Channel Tube 2.9 Ω @ 500mA, 10V ±30V 411pF @ 25V 9.8nC @ 10V 600V TO-220-3

IXTP3N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 411pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [3A] according to its drain current.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5.5V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP3N60P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 6A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXTP3N60P Applications


There are a lot of IXYS
IXTP3N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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