IXTP3N60P
- Mfr.Part #
- IXTP3N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3A TO220AB
- Stock
- 21
- In Stock :
- 21
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 3A
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 9.8nC @ 10V
- FET Type :
- N-Channel
- Current Rating :
- 3A
- Threshold Voltage :
- 5.5V
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 3A
- Gate to Source Voltage (Vgs) :
- 30V
- Voltage - Rated DC :
- 600V
- Published :
- 2004
- Number of Terminations :
- 3
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Surface Mount :
- No
- Package Shape :
- RECTANGULAR
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 411pF @ 25V
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 2.9 Ω @ 500mA, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 100 mJ
- JESD-30 Code :
- R-PSFM-T3
- Series :
- PolarHV™
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Fall Time (Typ) :
- 22 ns
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Pulsed Drain Current-Max (IDM) :
- 6A
- Base Product Number :
- IXTP3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 600V
- Element Configuration :
- Single
- FET Feature :
- --
- Power Dissipation-Max :
- 70W Tc
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- DS Breakdown Voltage-Min :
- 600 V
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 2.9 Ω
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- Number of Terminals :
- 3
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Through Hole
- Product Status :
- Obsolete
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 58 ns
- Supplier Device Package :
- TO-220AB
- Manufacturer :
- IXYS Corporation
- Power Dissipation (Max) :
- 70W (Tc)
- Power Dissipation :
- 70W
- Rise Time :
- 25ns
- Drain to Source Breakdown Voltage :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXTP3N60P

N-Channel Tube 2.9 Ω @ 500mA, 10V ±30V 411pF @ 25V 9.8nC @ 10V 600V TO-220-3
IXTP3N60P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 411pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [3A] according to its drain current.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5.5V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP3N60P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 6A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)
IXTP3N60P Applications
There are a lot of IXYS
IXTP3N60P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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