IXTP3N60P

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Mfr.Part #
IXTP3N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 3A TO220AB
Stock
21
In Stock :
21

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Fall Time (Typ) :
22 ns
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
2.9 Ω
Power Dissipation :
70W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn)
Product Status :
Obsolete
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
PolarHV™
Mount :
Through Hole
Package :
Tube
Pbfree Code :
yes
Continuous Drain Current (ID) :
3A
RoHS Status :
RoHS Compliant
REACH SVHC :
No SVHC
Avalanche Energy Rating (Eas) :
100 mJ
Lead Free :
Lead Free
Number of Terminals :
3
Pin Count :
3
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Power Dissipation-Max :
70W Tc
Published :
2004
Power Dissipation (Max) :
70W (Tc)
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds :
411pF @ 25V
FET Feature :
--
Rds On (Max) @ Id, Vgs :
2.9 Ω @ 500mA, 10V
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Drain to Source Breakdown Voltage :
600V
Gate to Source Voltage (Vgs) :
30V
Threshold Voltage :
5.5V
Current Rating :
3A
ECCN Code :
EAR99
FET Type :
N-Channel
Package / Case :
TO-220-3
Gate Charge (Qg) (Max) @ Vgs :
9.8nC @ 10V
Case Connection :
DRAIN
Turn-Off Delay Time :
58 ns
Drain Current-Max (Abs) (ID) :
3A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Rise Time :
25ns
Drain to Source Voltage (Vdss) :
600V
Vgs (Max) :
±30V
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Voltage - Rated DC :
600V
JESD-30 Code :
R-PSFM-T3
Package Shape :
RECTANGULAR
Pulsed Drain Current-Max (IDM) :
6A
Manufacturer :
IXYS Corporation
Polarity/Channel Type :
N-Channel
Number of Pins :
3
JESD-609 Code :
e3
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Base Product Number :
IXTP3
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
8 Weeks
Packaging :
Tube
DS Breakdown Voltage-Min :
600 V
Supplier Device Package :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
JEDEC-95 Code :
TO-220AB
Datasheets
IXTP3N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXTP3N60P pinout, IXTP3N60P datasheet PDF, IXTP3N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP3N60P


N-Channel Tube 2.9 Ω @ 500mA, 10V ±30V 411pF @ 25V 9.8nC @ 10V 600V TO-220-3

IXTP3N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 411pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [3A] according to its drain current.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5.5V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP3N60P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 6A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXTP3N60P Applications


There are a lot of IXYS
IXTP3N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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