IXTP3N50P
- Mfr.Part #
- IXTP3N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3.6A TO220AB
- Stock
- 30,243
- In Stock :
- 30,243
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-220AB
- Series :
- PolarHV™
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Qualification Status :
- Not Qualified
- Published :
- 2006
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 9.3nC @ 10V
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Current Rating :
- 3A
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 180 mJ
- Mounting Type :
- Through Hole
- Rise Time :
- 15ns
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Position :
- Single
- Supplier Device Package :
- TO-220AB
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 38 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Base Product Number :
- IXTP3
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1.8A, 10V
- Power Dissipation (Max) :
- 70W (Tc)
- Drain to Source Voltage (Vdss) :
- 500V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Power Dissipation :
- 70W
- Package / Case :
- TO-220-3
- Manufacturer :
- IXYS Corporation
- Mount :
- Through Hole
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 70W Tc
- Surface Mount :
- No
- Fall Time (Typ) :
- 12 ns
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 8 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 3.6A
- DS Breakdown Voltage-Min :
- 500 V
- Product Status :
- Obsolete
- Drain-source On Resistance-Max :
- 2Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- Voltage - Rated DC :
- 500V
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 8A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 3
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 409pF @ 25V
- Datasheets
- IXTP3N50P

N-Channel Tube 2 Ω @ 1.8A, 10V ±30V 409pF @ 25V 9.3nC @ 10V 500V TO-220-3
IXTP3N50P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 180 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 409pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 38 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 8A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTP3N50P Features
the avalanche energy rating (Eas) is 180 mJ
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 8A.
a 500V drain to source voltage (Vdss)
IXTP3N50P Applications
There are a lot of IXYS
IXTP3N50P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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