IXTP3N50P

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Mfr.Part #
IXTP3N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 3.6A TO220AB
Stock
30,243
In Stock :
30,243

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
JEDEC-95 Code :
TO-220AB
Series :
PolarHV™
Packaging :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
Number of Terminations :
3
FET Type :
N-Channel
Terminal Finish :
Matte Tin (Sn)
Qualification Status :
Not Qualified
Published :
2006
RoHS Status :
RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs :
9.3nC @ 10V
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Current Rating :
3A
Pin Count :
3
Avalanche Energy Rating (Eas) :
180 mJ
Mounting Type :
Through Hole
Rise Time :
15ns
Number of Elements :
1
Drain to Source Breakdown Voltage :
500V
Terminal Position :
Single
Supplier Device Package :
TO-220AB
Transistor Application :
SWITCHING
Turn-Off Delay Time :
38 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Element Configuration :
Single
Base Product Number :
IXTP3
Rds On (Max) @ Id, Vgs :
2 Ω @ 1.8A, 10V
Power Dissipation (Max) :
70W (Tc)
Drain to Source Voltage (Vdss) :
500V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Package :
Tube
Power Dissipation :
70W
Package / Case :
TO-220-3
Manufacturer :
IXYS Corporation
Mount :
Through Hole
Number of Pins :
3
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
70W Tc
Surface Mount :
No
Fall Time (Typ) :
12 ns
Vgs (Max) :
±30V
Factory Lead Time :
8 Weeks
Current - Continuous Drain (Id) @ 25°C :
3.6A Tc
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Continuous Drain Current (ID) :
3.6A
DS Breakdown Voltage-Min :
500 V
Product Status :
Obsolete
Drain-source On Resistance-Max :
2Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Voltage - Rated DC :
500V
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
8A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
3
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
409pF @ 25V
Datasheets
IXTP3N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXTP3N50P pinout, IXTP3N50P datasheet PDF, IXTP3N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP3N50P


N-Channel Tube 2 Ω @ 1.8A, 10V ±30V 409pF @ 25V 9.3nC @ 10V 500V TO-220-3

IXTP3N50P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 180 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 409pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 38 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 8A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTP3N50P Features


the avalanche energy rating (Eas) is 180 mJ
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 8A.
a 500V drain to source voltage (Vdss)


IXTP3N50P Applications


There are a lot of IXYS
IXTP3N50P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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