IXTP3N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Channels :

1 Channel

Qualification :

-

Product Type :

MOSFET

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

Not Applicable

Operating Mode :

ENHANCEMENT MODE

Width :

4.83 mm

Pulsed Drain Current-Max (IDM) :

12 A

Length :

10.66 mm

RoHS :

Details

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Power Dissipation (Max) :

200W (Tc)

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

32 ns

Number of Pins :

3

Channel Type :

N Channel

Height :

9.15 mm

JESD-30 Code :

R-PSFM-T3

Published :

2004

Vgs (Max) :

±20V

MSL :

-

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED

Series :

HiPerFET™

Mount :

Through Hole

Transistor Polarity :

N-Channel

Fall Time (Typ) :

18 ns

Voltage - Rated DC :

1.2kV

Power Dissipation :

200W

Base Product Number :

IXTP3

Number of Elements :

1

Drain to Source Breakdown Voltage :

1.1kV

Number of Terminals :

3

Configuration :

Single

Transistor Application :

SWITCHING

Pbfree Code :

yes

Pin Count :

3

Channel Mode :

Enhancement

Factory Lead Time :

24 Weeks

Continuous Drain Current Id :

3A

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Category :

MOSFET

Transistor Type :

1 N-Channel

Current Rating :

3A

Drain to Source Voltage (Vdss) :

1200V

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 500mA, 10V

Brand :

IXYS

Resistance :

4.5Ohm

Power Dissipation-Max :

200W Tc

Radiation Hardening :

No

Element Configuration :

Single

Number of Terminations :

3

DS Breakdown Voltage-Min :

1200 V

Maximum Operating Temperature :

+ 150 C

ECCN Code :

EAR99

Supplier Device Package :

TO-220AB

Mounting Style :

Through Hole

Drain-source On Resistance-Max :

4.5 Ω

Subcategory :

MOSFETs

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

15ns

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

No

Threshold Voltage :

5V

Terminal Form :

THROUGH-HOLE

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

FET Feature :

--

Product Status :

Active

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Continuous Drain Current (ID) :

3A

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Drain Current-Max (Abs) (ID) :

3A

Terminal Position :

Single

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Avalanche Energy Rating (Eas) :

700 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

IXYS