IXTP3N110
- Mfr.Part #
- IXTP3N110
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1100V 3A TO220AB
- Stock
- 28,176
- In Stock :
- 28,176
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 3A
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 18 ns
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 3A
- Input Capacitance :
- 1.35 nF
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 25V
- Published :
- 2003
- Power Dissipation-Max :
- 150W Tc
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Power Dissipation (Max) :
- 150W (Tc)
- Series :
- --
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 150W
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Height :
- 9.15 mm
- Channel Mode :
- Enhancement
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- N-Channel
- Rise Time :
- 15ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Max Operating Temperature :
- 150 °C
- Rds On Max :
- 4 Ω
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 200 W
- Drain-source On Resistance-Max :
- 4Ohm
- Surface Mount :
- No
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 1100V
- DS Breakdown Voltage-Min :
- 1100 V
- Product Category :
- MOSFET
- Pin Count :
- 3
- Number of Channels :
- 1 Channel
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 4 Ω @ 1.5A, 10V
- RoHS :
- Compliant
- Element Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminals :
- 3
- Product Status :
- Active
- FET Feature :
- --
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 1.1kV
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Resistance :
- 4 Ω
- Min Operating Temperature :
- -55 °C
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Subcategory :
- MOSFETs
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXTP3
- Transistor Polarity :
- N-Channel
- Length :
- 10.66 mm
- Turn-Off Delay Time :
- 32 ns
- Brand :
- IXYS
- Pbfree Code :
- yes
- Transistor Type :
- 1 N-Channel
- Width :
- 4.83 mm
- Mounting Style :
- Through Hole
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 12A
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXTP3N110

N-Channel Tube 4 Ω @ 1.5A, 10V ±20V 1350pF @ 25V 42nC @ 10V 1100V TO-220-3
IXTP3N110 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.A device's maximum input capacitance is 1350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.1kV, and this device has a drain-to-source breakdown voltage of 1.1kV voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Its maximum pulsed drain current is 12A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 4 Ω when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1100 V.To operate this transistor, you need to apply a 1100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP3N110 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1.1kV voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 12A.
single MOSFETs transistor is 4 Ω
a 1100V drain to source voltage (Vdss)
IXTP3N110 Applications
There are a lot of IXYS
IXTP3N110 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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