IXTP3N110

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Mfr.Part #
IXTP3N110
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1100V 3A TO220AB
Stock
28,176
In Stock :
28,176

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Drain Current-Max (Abs) (ID) :
3A
Product Type :
MOSFET
Fall Time (Typ) :
18 ns
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
3A
Input Capacitance :
1.35 nF
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 25V
Published :
2003
Power Dissipation-Max :
150W Tc
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Package :
Tube
JESD-30 Code :
R-PSFM-T3
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JEDEC-95 Code :
TO-220AB
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Avalanche Energy Rating (Eas) :
700 mJ
Power Dissipation (Max) :
150W (Tc)
Series :
--
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
150W
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Height :
9.15 mm
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
5V @ 250μA
FET Type :
N-Channel
Rise Time :
15ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
TO-220AB
Operating Mode :
ENHANCEMENT MODE
Max Operating Temperature :
150 °C
Rds On Max :
4 Ω
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
200 W
Drain-source On Resistance-Max :
4Ohm
Surface Mount :
No
Manufacturer :
IXYS
Drain to Source Voltage (Vdss) :
1100V
DS Breakdown Voltage-Min :
1100 V
Product Category :
MOSFET
Pin Count :
3
Number of Channels :
1 Channel
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
4 Ω @ 1.5A, 10V
RoHS :
Compliant
Element Configuration :
Single
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Terminal Finish :
Matte Tin (Sn)
Number of Terminals :
3
Product Status :
Active
FET Feature :
--
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
1.1kV
Additional Feature :
AVALANCHE RATED
Drain to Source Resistance :
4 Ω
Min Operating Temperature :
-55 °C
Package / Case :
TO-220-3
Mount :
Through Hole
Subcategory :
MOSFETs
Reach Compliance Code :
Compliant
Base Product Number :
IXTP3
Transistor Polarity :
N-Channel
Length :
10.66 mm
Turn-Off Delay Time :
32 ns
Brand :
IXYS
Pbfree Code :
yes
Transistor Type :
1 N-Channel
Width :
4.83 mm
Mounting Style :
Through Hole
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
12A
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Configuration :
Single
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXTP3N110
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N110 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTP3N110 pinout, IXTP3N110 datasheet PDF, IXTP3N110 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N110 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP3N110


N-Channel Tube 4 Ω @ 1.5A, 10V ±20V 1350pF @ 25V 42nC @ 10V 1100V TO-220-3

IXTP3N110 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.A device's maximum input capacitance is 1350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.1kV, and this device has a drain-to-source breakdown voltage of 1.1kV voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Its maximum pulsed drain current is 12A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 4 Ω when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1100 V.To operate this transistor, you need to apply a 1100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP3N110 Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1.1kV voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 12A.
single MOSFETs transistor is 4 Ω
a 1100V drain to source voltage (Vdss)


IXTP3N110 Applications


There are a lot of IXYS
IXTP3N110 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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