IXTP3N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2007

Base Product Number :

IXTP3

Qualification Status :

Not Qualified

Terminal Position :

Single

Power Dissipation-Max :

125W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation (Max) :

125W (Tc)

Number of Elements :

1

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Resistance :

4.8 Ω

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Type :

Polar Power MOSFET

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Continuous Drain Current (ID) :

3A

Drain-source On Resistance-Max :

4.8 Ω

Product Status :

Active

Factory Lead Time :

24 Weeks

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

1000V

Reach Compliance Code :

Compliant

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Packaging :

Tube

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Maximum Operating Temperature :

+ 150 C

Transistor Application :

SWITCHING

RoHS :

Compliant

Max Power Dissipation :

125 W

Number of Terminals :

3

Fall Time (Typ) :

29 ns

Tradename :

Polar

Supplier Device Package :

TO-220AB

Min Operating Temperature :

-55 °C

Turn-Off Delay Time :

75 ns

JESD-609 Code :

e1

FET Feature :

--

Power Dissipation :

125W

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

1000 V

Pin Count :

3

Number of Terminations :

3

Transistor Type :

1 N-Channel

Pulsed Drain Current-Max (IDM) :

6A

Gate to Source Voltage (Vgs) :

20V

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Package :

Tube

Number of Channels :

1 Channel

Avalanche Energy Rating (Eas) :

200 mJ

RoHS Status :

ROHS3 Compliant

Rise Time :

27ns

Mounting Type :

Through Hole

Rds On Max :

4.8 Ω

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Series :

PolarVHV™

Width :

4.83 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Terminal Form :

THROUGH-HOLE

Brand :

IXYS

Height :

16 mm

Max Operating Temperature :

150 °C

Product Category :

MOSFET

Configuration :

Single

Drain Current-Max (Abs) (ID) :

3A

Power Dissipation-Max (Abs) :

125 W

Polarity/Channel Type :

N-Channel

Length :

10.66 mm

Mount :

Through Hole

Input Capacitance :

1.1 nF

Minimum Operating Temperature :

- 55 C

Surface Mount :

No

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

1kV

Mounting Style :

Through Hole

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE