IXTP3N100P

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Mfr.Part #
IXTP3N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 3A TO220AB
Stock
31
In Stock :
31

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Polarity/Channel Type :
N-Channel
Fall Time (Typ) :
29 ns
Package Shape :
RECTANGULAR
Channel Mode :
Enhancement
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Polarity :
N-Channel
Gate to Source Voltage (Vgs) :
20V
RoHS :
Compliant
Drain-source On Resistance-Max :
4.8 Ω
Published :
2007
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
24 Weeks
Mounting Style :
Through Hole
Vgs (Max) :
±20V
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
4.8 Ω @ 1.5A, 10V
Drain to Source Voltage (Vdss) :
1000V
Package / Case :
TO-220-3
Transistor Type :
1 N-Channel
Drain Current-Max (Abs) (ID) :
3A
Number of Channels :
1 Channel
Case Connection :
DRAIN
Base Product Number :
IXTP3
Max Operating Temperature :
150 °C
Power Dissipation-Max :
125W Tc
Drain to Source Resistance :
4.8 Ω
Number of Terminals :
3
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
1kV
Rise Time :
27ns
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Power Dissipation-Max (Abs) :
125 W
Packaging :
Tube
Avalanche Energy Rating (Eas) :
200 mJ
Configuration :
Single
FET Type :
N-Channel
Number of Elements :
1
Min Operating Temperature :
-55 °C
Terminal Form :
THROUGH-HOLE
Brand :
IXYS
Product Type :
MOSFET
Element Configuration :
Single
JEDEC-95 Code :
TO-220AB
Mount :
Through Hole
Width :
4.83 mm
Product Category :
MOSFET
Continuous Drain Current (ID) :
3A
Series :
PolarVHV™
Power Dissipation :
125W
Supplier Device Package :
TO-220AB
Max Power Dissipation :
125 W
Power Dissipation (Max) :
125W (Tc)
Tradename :
Polar
Product Status :
Active
Turn-Off Delay Time :
75 ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Reach Compliance Code :
Compliant
Surface Mount :
No
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
6A
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
1000 V
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Length :
10.66 mm
Qualification Status :
Not Qualified
Rds On Max :
4.8 Ω
Type :
Polar Power MOSFET
Input Capacitance :
1.1 nF
Operating Mode :
ENHANCEMENT MODE
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS
FET Feature :
--
Package :
Tube
Height :
16 mm
JESD-609 Code :
e1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Type:Polar Power MOSFET, IXTP3N100P pinout, IXTP3N100P datasheet PDF, IXTP3N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP3N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP3N100P


N-Channel Tube 4.8 Ω @ 1.5A, 10V ±20V 1100pF @ 25V 39nC @ 10V 1000V TO-220-3

IXTP3N100P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 200 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1100pF @ 25V.This device conducts a continuous drain current (ID) of 3A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3A.When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 6A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 4.8 Ω, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTP3N100P Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 6A.
single MOSFETs transistor is 4.8 Ω
a 1000V drain to source voltage (Vdss)


IXTP3N100P Applications


There are a lot of IXYS
IXTP3N100P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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