IXTP36P15P
- Mfr.Part #
- IXTP36P15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 150V 36A TO220AB
- Stock
- 20
- In Stock :
- 20
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Number of Channels :
- 1 Channel
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 3
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXTP36
- Length :
- 10.66 mm
- Reach Compliance Code :
- Compliant
- Transistor Polarity :
- P-Channel
- Radiation Hardening :
- No
- Max Power Dissipation :
- 300 W
- Pin Count :
- 3
- Mount :
- Through Hole
- Drain to Source Resistance :
- 110 mΩ
- Tradename :
- PolarP
- Drain Current-Max (Abs) (ID) :
- 36 A
- Transistor Type :
- 1 P-Channel
- Pulsed Drain Current-Max (IDM) :
- 90A
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 36A
- JESD-609 Code :
- e1
- Factory Lead Time :
- 24 Weeks
- Product Category :
- MOSFET
- Height :
- 16 mm
- Configuration :
- Single
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Drain-source On Resistance-Max :
- 0.11 Ω
- Transistor Application :
- SWITCHING
- Power Dissipation-Max (Abs) :
- 300 W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-220AB
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Rds On Max :
- 110 mΩ
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 18A, 10V
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Channel Mode :
- Enhancement
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 150V
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2009
- RoHS :
- Details
- Width :
- 4.83 mm
- Polarity/Channel Type :
- P-Channel
- Power Dissipation :
- 300W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Max Operating Temperature :
- 150 °C
- Package :
- Tube
- ECCN Code :
- EAR99
- Terminal Finish :
- TIN SILVER COPPER
- Min Operating Temperature :
- -55 °C
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 150 V
- FET Feature :
- --
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- -150V
- Minimum Operating Temperature :
- - 55 C
- Series :
- PolarP™
- Power Dissipation-Max :
- 300W Tc
- Lead Free :
- Lead Free
- Maximum Operating Temperature :
- + 150 C
- Input Capacitance :
- 3.1 nF
- Packaging :
- Tube
- Rise Time :
- 31ns
- Power Dissipation (Max) :
- 300W (Tc)
- Number of Terminals :
- 3
- Turn-Off Delay Time :
- 36 ns
- Brand :
- IXYS
- JEDEC-95 Code :
- TO-220AB
- Fall Time (Typ) :
- 15 ns
- Pbfree Code :
- yes
- Type :
- PolarP Power MOSFET
- Datasheets
- IXTP36P15P

P-Channel Tube 110m Ω @ 18A, 10V ±20V 3100pF @ 25V 55nC @ 10V 150V TO-220-3
IXTP36P15P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 3100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 36A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-150V, and this device has a drain-to-source breakdown voltage of -150V voltage.Its drain current is 36 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 36 ns.Its maximum pulsed drain current is 90A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 110 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 150 V.To operate this transistor, you need to apply a 150V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP36P15P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 90A.
single MOSFETs transistor is 110 mΩ
a 150V drain to source voltage (Vdss)
IXTP36P15P Applications
There are a lot of IXYS
IXTP36P15P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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