IXTP36P15P

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Mfr.Part #
IXTP36P15P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 150V 36A TO220AB
Stock
20
In Stock :
20

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
3
FET Type :
P-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Product Number :
IXTP36
Length :
10.66 mm
Reach Compliance Code :
Compliant
Transistor Polarity :
P-Channel
Radiation Hardening :
No
Max Power Dissipation :
300 W
Pin Count :
3
Mount :
Through Hole
Drain to Source Resistance :
110 mΩ
Tradename :
PolarP
Drain Current-Max (Abs) (ID) :
36 A
Transistor Type :
1 P-Channel
Pulsed Drain Current-Max (IDM) :
90A
Package / Case :
TO-220-3
Continuous Drain Current (ID) :
36A
JESD-609 Code :
e1
Factory Lead Time :
24 Weeks
Product Category :
MOSFET
Height :
16 mm
Configuration :
Single
Manufacturer :
IXYS
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
1500 mJ
Drain-source On Resistance-Max :
0.11 Ω
Transistor Application :
SWITCHING
Power Dissipation-Max (Abs) :
300 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-220AB
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
No
Rds On Max :
110 mΩ
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
110m Ω @ 18A, 10V
Mounting Style :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
3100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Number of Elements :
1
Drain to Source Voltage (Vdss) :
150V
JESD-30 Code :
R-PSFM-T3
Published :
2009
RoHS :
Details
Width :
4.83 mm
Polarity/Channel Type :
P-Channel
Power Dissipation :
300W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Max Operating Temperature :
150 °C
Package :
Tube
ECCN Code :
EAR99
Terminal Finish :
TIN SILVER COPPER
Min Operating Temperature :
-55 °C
Product Type :
MOSFET
DS Breakdown Voltage-Min :
150 V
FET Feature :
--
Terminal Position :
Single
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
-150V
Minimum Operating Temperature :
- 55 C
Series :
PolarP™
Power Dissipation-Max :
300W Tc
Lead Free :
Lead Free
Maximum Operating Temperature :
+ 150 C
Input Capacitance :
3.1 nF
Packaging :
Tube
Rise Time :
31ns
Power Dissipation (Max) :
300W (Tc)
Number of Terminals :
3
Turn-Off Delay Time :
36 ns
Brand :
IXYS
JEDEC-95 Code :
TO-220AB
Fall Time (Typ) :
15 ns
Pbfree Code :
yes
Type :
PolarP Power MOSFET
Datasheets
IXTP36P15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP36P15P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Type:PolarP Power MOSFET, IXTP36P15P pinout, IXTP36P15P datasheet PDF, IXTP36P15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP36P15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP36P15P


P-Channel Tube 110m Ω @ 18A, 10V ±20V 3100pF @ 25V 55nC @ 10V 150V TO-220-3

IXTP36P15P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 3100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 36A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-150V, and this device has a drain-to-source breakdown voltage of -150V voltage.Its drain current is 36 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 36 ns.Its maximum pulsed drain current is 90A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 110 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 150 V.To operate this transistor, you need to apply a 150V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP36P15P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 90A.
single MOSFETs transistor is 110 mΩ
a 150V drain to source voltage (Vdss)


IXTP36P15P Applications


There are a lot of IXYS
IXTP36P15P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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