IXTP36N30P

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Mfr.Part #
IXTP36N30P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 300V 36A TO220AB
Stock
100
In Stock :
100

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
30ns
Power Dissipation :
300W
Subcategory :
MOSFETs
Resistance :
110mOhm
Lead Free :
Lead Free
Transistor Polarity :
N-Channel
Element Configuration :
Single
Surface Mount :
No
Transistor Element Material :
SILICON
Terminal Finish :
Matte Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±30V
Channel Type :
N
Terminal Position :
Single
Mounting Type :
Through Hole
Turn On Delay Time :
24 ns
Gate to Source Voltage (Vgs) :
30V
Number of Channels :
1 Channel
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Height :
9.15mm
Drain to Source Voltage (Vdss) :
300V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+150 °C
Package / Case :
TO-220-3
Tradename :
PolarHT
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Package :
Tube
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
Product Type :
MOSFET
Fall Time (Typ) :
28 ns
Brand :
IXYS
Published :
2006
Mount :
Through Hole
Pulsed Drain Current-Max (IDM) :
90A
Manufacturer :
IXYS
Radiation Hardening :
No
Qualification :
-
Minimum Operating Temperature :
-55 °C
Number of Terminations :
3
Channel Mode :
Enhancement
Base Product Number :
IXTP36
Number of Elements per Chip :
1
Supplier Device Package :
TO-220AB
Continuous Drain Current Id :
36A
Type :
PolarHT Power MOSFET
Case Connection :
DRAIN
JEDEC-95 Code :
TO-220AB
Power Dissipation-Max :
300W Tc
Terminal Form :
THROUGH-HOLE
Series :
PolarHT™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
300 V
FET Feature :
--
RoHS :
Details
Transistor Application :
SWITCHING
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
110m Ω @ 18A, 10V
Factory Lead Time :
24 Weeks
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Power Dissipation (Max) :
300W (Tc)
MSL :
MSL 1 - Unlimited
JESD-609 Code :
e3
Transistor Type :
1 N-Channel
Operating Mode :
ENHANCEMENT MODE
Package Type :
TO-220
Avalanche Energy Rating (Eas) :
1000 mJ
ECCN Code :
EAR99
Product Category :
MOSFET
Pin Count :
3
Drain to Source Breakdown Voltage :
300V
Mounting Style :
Through Hole
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Number of Elements :
1
Pbfree Code :
yes
Length :
10.66mm
Continuous Drain Current (ID) :
36A
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 25V
Number of Pins :
3
Product Status :
Active
Turn-Off Delay Time :
97 ns
Configuration :
Single
RoHS Status :
ROHS3 Compliant
Width :
4.83mm
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Drain-source On Resistance-Max :
0.11 Ω
Number of Terminals :
3
Datasheets
IXTP36N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP36N30P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, Type:PolarHT Power MOSFET, Number of Pins:3, IXTP36N30P pinout, IXTP36N30P datasheet PDF, IXTP36N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP36N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP36N30P


N-Channel Tube 110m Ω @ 18A, 10V ±30V 2250pF @ 25V 70nC @ 10V 300V TO-220-3

IXTP36N30P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 36A amps.In this device, the drain-source breakdown voltage is 300V and VGS=300V, so the drain-source breakdown voltage is 300V in this case.It is [97 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 90A.A turn-on delay time of 24 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 300 V to maintain normal operation.To operate this transistor, you will need a 300V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP36N30P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 97 ns
based on its rated peak drain current 90A.
a 300V drain to source voltage (Vdss)


IXTP36N30P Applications


There are a lot of IXYS
IXTP36N30P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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