IXTP36N30P
- Mfr.Part #
- IXTP36N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 36A TO220AB
- Stock
- 100
- In Stock :
- 100
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 30ns
- Power Dissipation :
- 300W
- Subcategory :
- MOSFETs
- Resistance :
- 110mOhm
- Lead Free :
- Lead Free
- Transistor Polarity :
- N-Channel
- Element Configuration :
- Single
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Channel Type :
- N
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 24 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Height :
- 9.15mm
- Drain to Source Voltage (Vdss) :
- 300V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- +150 °C
- Package / Case :
- TO-220-3
- Tradename :
- PolarHT
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 28 ns
- Brand :
- IXYS
- Published :
- 2006
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 90A
- Manufacturer :
- IXYS
- Radiation Hardening :
- No
- Qualification :
- -
- Minimum Operating Temperature :
- -55 °C
- Number of Terminations :
- 3
- Channel Mode :
- Enhancement
- Base Product Number :
- IXTP36
- Number of Elements per Chip :
- 1
- Supplier Device Package :
- TO-220AB
- Continuous Drain Current Id :
- 36A
- Type :
- PolarHT Power MOSFET
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 300W Tc
- Terminal Form :
- THROUGH-HOLE
- Series :
- PolarHT™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 300 V
- FET Feature :
- --
- RoHS :
- Details
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 18A, 10V
- Factory Lead Time :
- 24 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Power Dissipation (Max) :
- 300W (Tc)
- MSL :
- MSL 1 - Unlimited
- JESD-609 Code :
- e3
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Package Type :
- TO-220
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- ECCN Code :
- EAR99
- Product Category :
- MOSFET
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 300V
- Mounting Style :
- Through Hole
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Length :
- 10.66mm
- Continuous Drain Current (ID) :
- 36A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Number of Pins :
- 3
- Product Status :
- Active
- Turn-Off Delay Time :
- 97 ns
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.83mm
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Drain-source On Resistance-Max :
- 0.11 Ω
- Number of Terminals :
- 3
- Datasheets
- IXTP36N30P

N-Channel Tube 110m Ω @ 18A, 10V ±30V 2250pF @ 25V 70nC @ 10V 300V TO-220-3
IXTP36N30P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2250pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 36A amps.In this device, the drain-source breakdown voltage is 300V and VGS=300V, so the drain-source breakdown voltage is 300V in this case.It is [97 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 90A.A turn-on delay time of 24 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 300 V to maintain normal operation.To operate this transistor, you will need a 300V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP36N30P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 97 ns
based on its rated peak drain current 90A.
a 300V drain to source voltage (Vdss)
IXTP36N30P Applications
There are a lot of IXYS
IXTP36N30P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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