IXTP32N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 175 C

Number of Terminals :

3

Transistor Polarity :

N-Channel

Mounting Style :

Through Hole

Brand :

IXYS

Power Dissipation-Max (Abs) :

200 W

Width :

4.83 mm

Height :

9.15 mm

Operating Mode :

ENHANCEMENT MODE

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

72m Ω @ 16A, 10V

Channel Mode :

Enhancement

Supplier Device Package :

TO-220AB

Package :

Tube

JESD-609 Code :

e1

ECCN Code :

EAR99

Length :

10.66 mm

Power Dissipation-Max :

200W Tc

Drain-source On Resistance-Max :

0.072Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1760pF @ 25V

Number of Elements :

1

Turn-Off Delay Time :

55 ns

DS Breakdown Voltage-Min :

200 V

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

32A

Number of Channels :

1 Channel

Avalanche Energy Rating (Eas) :

250 mJ

Published :

2010

Product Status :

Active

RoHS :

Details

Pulsed Drain Current-Max (IDM) :

64A

Drain Current-Max (Abs) (ID) :

32 A

Additional Feature :

AVALANCHE RATED

Base Product Number :

IXTP32

Terminal Form :

THROUGH-HOLE

Power Dissipation :

200W

Element Configuration :

Single

Package / Case :

TO-220-3

FET Feature :

--

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Terminal Position :

Single

Manufacturer :

IXYS

Power Dissipation (Max) :

200W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

200V

Series :

--

Product Type :

MOSFET

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Package Shape :

RECTANGULAR

Number of Terminations :

3

Qualification Status :

Not Qualified

Tradename :

HiPerFET

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Surface Mount :

No

Pbfree Code :

yes

Mounting Type :

Through Hole

Minimum Operating Temperature :

- 55 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

24 Weeks

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Voltage (Vdss) :

200V

Fall Time (Typ) :

31 ns

Transistor Element Material :

SILICON

Packaging :

Tube

Transistor Type :

1 N-Channel

Reach Compliance Code :

Compliant

Rise Time :

18ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Gate to Source Voltage (Vgs) :

20V