IXTP32N20T

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Mfr.Part #
IXTP32N20T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 200V 32A TO220AB
Stock
49,229
In Stock :
49,229

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
31 ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
72m Ω @ 16A, 10V
Brand :
IXYS
Mount :
Through Hole
Maximum Operating Temperature :
+ 175 C
RoHS :
Details
Surface Mount :
No
Drain to Source Voltage (Vdss) :
200V
Drain-source On Resistance-Max :
0.072Ohm
Power Dissipation-Max (Abs) :
200 W
Operating Temperature :
-55°C~175°C TJ
Base Product Number :
IXTP32
Rise Time :
18ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Product Category :
MOSFET
Pin Count :
3
FET Feature :
--
Product Status :
Active
Package / Case :
TO-220-3
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
JEDEC-95 Code :
TO-220AB
JESD-609 Code :
e1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max :
200W Tc
Package Shape :
RECTANGULAR
Power Dissipation :
200W
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Number of Channels :
1 Channel
DS Breakdown Voltage-Min :
200 V
Mounting Style :
Through Hole
Transistor Application :
SWITCHING
Height :
9.15 mm
Series :
--
Vgs(th) (Max) @ Id :
4.5V @ 250μA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Compliant
Configuration :
Single
Manufacturer :
IXYS
Transistor Polarity :
N-Channel
Product Type :
MOSFET
Terminal Form :
THROUGH-HOLE
Factory Lead Time :
24 Weeks
Supplier Device Package :
TO-220AB
Tradename :
HiPerFET
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
250 mJ
Mounting Type :
Through Hole
Transistor Type :
1 N-Channel
Terminal Position :
Single
Element Configuration :
Single
Length :
10.66 mm
Width :
4.83 mm
Continuous Drain Current (ID) :
32A
Power Dissipation (Max) :
200W (Tc)
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSFM-T3
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
32 A
Drain to Source Breakdown Voltage :
200V
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
1760pF @ 25V
Pulsed Drain Current-Max (IDM) :
64A
Number of Elements :
1
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
55 ns
Pbfree Code :
yes
Published :
2010
FET Type :
N-Channel
Vgs (Max) :
±20V
Channel Mode :
Enhancement
Datasheets
IXTP32N20T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP32N20T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Number of Channels:1 Channel, Mounting Type:Through Hole, IXTP32N20T pinout, IXTP32N20T datasheet PDF, IXTP32N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP32N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP32N20T


N-Channel Tube 72m Ω @ 16A, 10V ±20V 1760pF @ 25V 38nC @ 10V 200V TO-220-3

IXTP32N20T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 250 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1760pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 32A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.32 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Peak drain current for this device is 64A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP32N20T Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 64A.
a 200V drain to source voltage (Vdss)


IXTP32N20T Applications


There are a lot of IXYS
IXTP32N20T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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