IXTP32N20T

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Mfr.Part #
IXTP32N20T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 200V 32A TO220AB
Stock
49,229
In Stock :
49,229

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification Status :
Not Qualified
Height :
9.15 mm
Pin Count :
3
DS Breakdown Voltage-Min :
200 V
Turn-Off Delay Time :
55 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
Through Hole
Number of Terminals :
3
Input Capacitance (Ciss) (Max) @ Vds :
1760pF @ 25V
Package Shape :
RECTANGULAR
Brand :
IXYS
Factory Lead Time :
24 Weeks
Package / Case :
TO-220-3
Product Type :
MOSFET
Package :
Tube
JESD-609 Code :
e1
ECCN Code :
EAR99
Mounting Type :
Through Hole
Fall Time (Typ) :
31 ns
Length :
10.66 mm
Terminal Position :
Single
Power Dissipation-Max :
200W Tc
Channel Mode :
Enhancement
Base Product Number :
IXTP32
Reach Compliance Code :
Compliant
Number of Channels :
1 Channel
Series :
--
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
32A
Minimum Operating Temperature :
- 55 C
Drain-source On Resistance-Max :
0.072Ohm
Product Category :
MOSFET
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Published :
2010
Operating Temperature :
-55°C~175°C TJ
RoHS :
Details
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
200W (Tc)
Supplier Device Package :
TO-220AB
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Number of Terminations :
3
Surface Mount :
No
Avalanche Energy Rating (Eas) :
250 mJ
Power Dissipation :
200W
Product Status :
Active
Case Connection :
DRAIN
Width :
4.83 mm
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Element Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
72m Ω @ 16A, 10V
JEDEC-95 Code :
TO-220AB
Drain to Source Breakdown Voltage :
200V
Mount :
Through Hole
Additional Feature :
AVALANCHE RATED
Transistor Polarity :
N-Channel
Configuration :
Single
Maximum Operating Temperature :
+ 175 C
Tradename :
HiPerFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
THROUGH-HOLE
Manufacturer :
IXYS
Drain Current-Max (Abs) (ID) :
32 A
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Number of Elements :
1
Power Dissipation-Max (Abs) :
200 W
Rise Time :
18ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
64A
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Application :
SWITCHING
Pbfree Code :
yes
Transistor Type :
1 N-Channel
Datasheets
IXTP32N20T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP32N20T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, IXTP32N20T pinout, IXTP32N20T datasheet PDF, IXTP32N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP32N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP32N20T


N-Channel Tube 72m Ω @ 16A, 10V ±20V 1760pF @ 25V 38nC @ 10V 200V TO-220-3

IXTP32N20T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 250 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1760pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 32A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.32 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Peak drain current for this device is 64A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP32N20T Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 64A.
a 200V drain to source voltage (Vdss)


IXTP32N20T Applications


There are a lot of IXYS
IXTP32N20T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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