IXTP32N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Height :

9.15 mm

Pin Count :

3

DS Breakdown Voltage-Min :

200 V

Turn-Off Delay Time :

55 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

1760pF @ 25V

Package Shape :

RECTANGULAR

Brand :

IXYS

Factory Lead Time :

24 Weeks

Package / Case :

TO-220-3

Product Type :

MOSFET

Package :

Tube

JESD-609 Code :

e1

ECCN Code :

EAR99

Mounting Type :

Through Hole

Fall Time (Typ) :

31 ns

Length :

10.66 mm

Terminal Position :

Single

Power Dissipation-Max :

200W Tc

Channel Mode :

Enhancement

Base Product Number :

IXTP32

Reach Compliance Code :

Compliant

Number of Channels :

1 Channel

Series :

--

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

32A

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

0.072Ohm

Product Category :

MOSFET

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Published :

2010

Operating Temperature :

-55°C~175°C TJ

RoHS :

Details

RoHS Status :

ROHS3 Compliant

Power Dissipation (Max) :

200W (Tc)

Supplier Device Package :

TO-220AB

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Terminations :

3

Surface Mount :

No

Avalanche Energy Rating (Eas) :

250 mJ

Power Dissipation :

200W

Product Status :

Active

Case Connection :

DRAIN

Width :

4.83 mm

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

72m Ω @ 16A, 10V

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

200V

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED

Transistor Polarity :

N-Channel

Configuration :

Single

Maximum Operating Temperature :

+ 175 C

Tradename :

HiPerFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Manufacturer :

IXYS

Drain Current-Max (Abs) (ID) :

32 A

Drain to Source Voltage (Vdss) :

200V

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Number of Elements :

1

Power Dissipation-Max (Abs) :

200 W

Rise Time :

18ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

64A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Pbfree Code :

yes

Transistor Type :

1 N-Channel