IXTP32N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

31 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

72m Ω @ 16A, 10V

Brand :

IXYS

Mount :

Through Hole

Maximum Operating Temperature :

+ 175 C

RoHS :

Details

Surface Mount :

No

Drain to Source Voltage (Vdss) :

200V

Drain-source On Resistance-Max :

0.072Ohm

Power Dissipation-Max (Abs) :

200 W

Operating Temperature :

-55°C~175°C TJ

Base Product Number :

IXTP32

Rise Time :

18ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Product Category :

MOSFET

Pin Count :

3

FET Feature :

--

Product Status :

Active

Package / Case :

TO-220-3

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

200W Tc

Package Shape :

RECTANGULAR

Power Dissipation :

200W

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

200 V

Mounting Style :

Through Hole

Transistor Application :

SWITCHING

Height :

9.15 mm

Series :

--

Vgs(th) (Max) @ Id :

4.5V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Configuration :

Single

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Terminal Form :

THROUGH-HOLE

Factory Lead Time :

24 Weeks

Supplier Device Package :

TO-220AB

Tradename :

HiPerFET

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

250 mJ

Mounting Type :

Through Hole

Transistor Type :

1 N-Channel

Terminal Position :

Single

Element Configuration :

Single

Length :

10.66 mm

Width :

4.83 mm

Continuous Drain Current (ID) :

32A

Power Dissipation (Max) :

200W (Tc)

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

32 A

Drain to Source Breakdown Voltage :

200V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1760pF @ 25V

Pulsed Drain Current-Max (IDM) :

64A

Number of Elements :

1

Number of Terminals :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

55 ns

Pbfree Code :

yes

Published :

2010

FET Type :

N-Channel

Vgs (Max) :

±20V

Channel Mode :

Enhancement