IXTP300N04T2
- Mfr.Part #
- IXTP300N04T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 300A TO220AB
- Stock
- 200
- In Stock :
- 200
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 500mA, 10V
- Terminal Form :
- THROUGH-HOLE
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- + 150 C
- Pin Count :
- 3
- Power Dissipation (Max) :
- 480W (Tc)
- Power Dissipation :
- 480W
- Drain Current-Max (Abs) (ID) :
- 300 A
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-220AB
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Drain-source On Resistance-Max :
- 0.0025Ohm
- Power Dissipation-Max :
- 480W Tc
- Terminal Position :
- Single
- Package :
- Tube
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Transistor Polarity :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 10700pF @ 25V
- JESD-609 Code :
- e1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 17 Weeks
- Drain to Source Voltage (Vdss) :
- 40V
- DS Breakdown Voltage-Min :
- 40V
- Product Type :
- MOSFET
- Series :
- TrenchT2™
- Additional Feature :
- AVALANCHE RATED
- RoHS :
- Details
- Continuous Drain Current (ID) :
- 300A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max (Abs) :
- 480 W
- FET Feature :
- --
- Brand :
- IXYS
- Tradename :
- HiPerFET
- Pulsed Drain Current-Max (IDM) :
- 900A
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Product Category :
- MOSFET
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Active
- JEDEC-95 Code :
- TO-220AB
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXTP300
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- ECCN Code :
- EAR99
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- Surface Mount :
- No
- Published :
- 2008
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Datasheets
- IXTP300N04T2

N-Channel Tube 2.5m Ω @ 500mA, 10V ±20V 10700pF @ 25V 145nC @ 10V 40V TO-220-3
IXTP300N04T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 600 mJ.A device's maximum input capacitance is 10700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 300A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 300 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 900A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 40V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP300N04T2 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)
IXTP300N04T2 Applications
There are a lot of IXYS
IXTP300N04T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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