IXTP300N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

900A

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

Power Dissipation :

480W

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

FET Type :

N-Channel

Published :

2008

Package :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Product Category :

MOSFET

RoHS :

Details

Drain-source On Resistance-Max :

0.0025Ohm

Input Capacitance (Ciss) (Max) @ Vds :

10700pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

480W Tc

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Tradename :

HiPerFET

Package / Case :

TO-220-3

Number of Terminals :

3

DS Breakdown Voltage-Min :

40V

Pin Count :

3

JESD-609 Code :

e1

Product Status :

Active

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

300 A

Transistor Polarity :

N-Channel

Series :

TrenchT2™

Number of Terminations :

3

Number of Channels :

1 Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Supplier Device Package :

TO-220AB

Factory Lead Time :

17 Weeks

Power Dissipation (Max) :

480W (Tc)

Power Dissipation-Max (Abs) :

480 W

Reach Compliance Code :

Compliant

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 500mA, 10V

Manufacturer :

IXYS

Drain to Source Voltage (Vdss) :

40V

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

Brand :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

Through Hole

JESD-30 Code :

R-PSFM-T3

Base Product Number :

IXTP300

Continuous Drain Current (ID) :

300A

Avalanche Energy Rating (Eas) :

600 mJ

Mounting Type :

Through Hole

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB