IXTP2R4N50P

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Mfr.Part #
IXTP2R4N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 2.4A TO220AB
Stock
26,822
In Stock :
26,822

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
Drain-source On Resistance-Max :
3.75 Ω
Continuous Drain Current (ID) :
2.4A
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Status :
Obsolete
DS Breakdown Voltage-Min :
500 V
Supplier Device Package :
TO-220AB
Terminal Finish :
Matte Tin (Sn)
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PSFM-T3
Gate to Source Voltage (Vgs) :
30V
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
2.4A Tc
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
500V
Turn-Off Delay Time :
65 ns
Power Dissipation (Max) :
55W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Package / Case :
TO-220-3
Gate Charge (Qg) (Max) @ Vgs :
6.1nC @ 10V
Number of Elements :
1
Vgs(th) (Max) @ Id :
5.5V @ 25μA
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Drain to Source Breakdown Voltage :
500V
Qualification Status :
Not Qualified
JESD-609 Code :
e3
Rise Time :
29ns
Power Dissipation :
55W
Power Dissipation-Max :
55W Tc
Additional Feature :
AVALANCHE RATED
Fall Time (Typ) :
28 ns
FET Feature :
--
Element Configuration :
Single
Reach Compliance Code :
Compliant
RoHS Status :
RoHS Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
Pulsed Drain Current-Max (IDM) :
4.5A
Voltage - Rated DC :
500V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
3.75 Ω @ 500mA, 10V
Manufacturer :
IXYS Corporation
Current Rating :
2A
Series :
PolarHV™
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
100 mJ
Package Shape :
RECTANGULAR
Package :
Tube
Pin Count :
3
Number of Terminals :
3
Terminal Form :
THROUGH-HOLE
Base Product Number :
IXTP2
Published :
2006
JEDEC-95 Code :
TO-220AB
Factory Lead Time :
7 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±30V
Datasheets
IXTP2R4N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP2R4N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTP2R4N50P pinout, IXTP2R4N50P datasheet PDF, IXTP2R4N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP2R4N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP2R4N50P


N-Channel Tube 3.75 Ω @ 500mA, 10V ±30V 240pF @ 25V 6.1nC @ 10V 500V TO-220-3

IXTP2R4N50P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.A device's maximum input capacitance is 240pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 65 ns.Its maximum pulsed drain current is 4.5A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP2R4N50P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 4.5A.
a 500V drain to source voltage (Vdss)


IXTP2R4N50P Applications


There are a lot of IXYS
IXTP2R4N50P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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