IXTP2R4N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Base Product Number :

IXTP2

Continuous Drain Current (ID) :

2.4A

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Minimum Operating Temperature :

- 55 C

Pin Count :

3

Turn-Off Delay Time :

70 ns

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

1200 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

200 mJ

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55 °C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

FET Feature :

--

Power Dissipation :

125W

Rise Time :

25ns

Maximum Operating Temperature :

+ 150 C

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Number of Channels :

1 Channel

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Transistor Polarity :

N-Channel

Mount :

Through Hole

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

1200V

Qualification Status :

Not Qualified

RoHS :

Details

Product Category :

MOSFET

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Mounting Style :

Through Hole

Width :

4.83 mm

Number of Terminals :

3

Transistor Type :

1 N-Channel

Manufacturer :

IXYS

Channel Mode :

Enhancement

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

1.2kV

Published :

2008

Input Capacitance :

1.207 nF

Power Dissipation-Max (Abs) :

125 W

Supplier Device Package :

TO-220AB

Height :

9.15 mm

Package :

Tube

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Length :

10.66 mm

Drain Current-Max (Abs) (ID) :

2.4 A

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

Configuration :

Single

Reach Compliance Code :

Compliant

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

1207pF @ 25V

Terminal Position :

Single

Drain to Source Resistance :

7.5 Ω

Rds On Max :

7.5 Ω

Fall Time (Typ) :

32 ns

Drain-source On Resistance-Max :

7.5 Ω

Max Operating Temperature :

150 °C

Max Power Dissipation :

125 W

Pulsed Drain Current-Max (IDM) :

6A

Power Dissipation (Max) :

125W (Tc)

Series :

Polar™

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Power Dissipation-Max :

125W Tc

FET Type :

N-Channel

Case Connection :

DRAIN

Product Type :

MOSFET