IXTP2N80P
- Mfr.Part #
- IXTP2N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO220AB
- Stock
- 47,581
- In Stock :
- 47,581
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Drain-source On Resistance-Max :
- 6Ohm
- Rise Time :
- 35ns
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 2A
- Number of Terminals :
- 3
- Supplier Device Package :
- TO-220AB
- Qualification Status :
- Not Qualified
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 70W (Tc)
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 10.6nC @ 10V
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 70W Tc
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Fall Time (Typ) :
- 28 ns
- Pulsed Drain Current-Max (IDM) :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Drain to Source Breakdown Voltage :
- 800V
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Factory Lead Time :
- 8 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS Corporation
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 70W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 1A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2006
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Product Status :
- Obsolete
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Base Product Number :
- IXTP2
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 800V
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Series :
- PolarHV™
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 53 ns
- FET Feature :
- --
- Terminal Finish :
- Matte Tin (Sn)
- DS Breakdown Voltage-Min :
- 800 V
- Drain Current-Max (Abs) (ID) :
- 2A
- Datasheets
- IXTP2N80P

N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800V TO-220-3
IXTP2N80P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.A device's maximum input capacitance is 440pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 53 ns.Its maximum pulsed drain current is 4A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP2N80P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
a 800V drain to source voltage (Vdss)
IXTP2N80P Applications
There are a lot of IXYS
IXTP2N80P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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