IXTP2N80P

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Mfr.Part #
IXTP2N80P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 800V 2A TO220AB
Stock
47,581
In Stock :
47,581

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Obsolete
Series :
PolarHV™
Fall Time (Typ) :
28 ns
Manufacturer :
IXYS Corporation
Avalanche Energy Rating (Eas) :
100 mJ
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Number of Terminals :
3
Drain-source On Resistance-Max :
6Ohm
Published :
2006
JESD-609 Code :
e3
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Package :
Tube
Rds On (Max) @ Id, Vgs :
6 Ω @ 1A, 10V
JESD-30 Code :
R-PSFM-T3
Power Dissipation (Max) :
70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Terminal Form :
THROUGH-HOLE
Power Dissipation :
70W
Number of Elements :
1
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
TO-220AB
Gate to Source Voltage (Vgs) :
30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
2A
Qualification Status :
Not Qualified
Terminal Finish :
Matte Tin (Sn)
Surface Mount :
No
Number of Terminations :
3
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
10.6nC @ 10V
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Mount :
Through Hole
Drain to Source Breakdown Voltage :
800V
DS Breakdown Voltage-Min :
800 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
2A
Configuration :
SINGLE WITH BUILT-IN DIODE
Reach Compliance Code :
Compliant
Vgs (Max) :
±30V
Drain to Source Voltage (Vdss) :
800V
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Base Product Number :
IXTP2
Package Shape :
RECTANGULAR
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
70W Tc
FET Type :
N-Channel
Package / Case :
TO-220-3
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
8 Weeks
Turn-Off Delay Time :
53 ns
Rise Time :
35ns
FET Feature :
--
Case Connection :
DRAIN
Pin Count :
3
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
4A
JEDEC-95 Code :
TO-220AB
Datasheets
IXTP2N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP2N80P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, IXTP2N80P pinout, IXTP2N80P datasheet PDF, IXTP2N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP2N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP2N80P


N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800V TO-220-3

IXTP2N80P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.A device's maximum input capacitance is 440pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 53 ns.Its maximum pulsed drain current is 4A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP2N80P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
a 800V drain to source voltage (Vdss)


IXTP2N80P Applications


There are a lot of IXYS
IXTP2N80P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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