IXTP2N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

800 V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Avalanche Energy Rating (Eas) :

200 mJ

Package :

Tube

Pulsed Drain Current-Max (IDM) :

8A

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Height :

9.15 mm

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Number of Terminals :

3

Turn-Off Delay Time :

30 ns

Min Operating Temperature :

-55 °C

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

800V

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Width :

4.82 mm

Series :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Additional Feature :

AVALANCHE RATED

Supplier Device Package :

TO-220AB

Mount :

Through Hole

Number of Elements :

1

RoHS :

Details

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max :

54W Tc

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

2A

Rds On (Max) @ Id, Vgs :

6.2 Ω @ 500mA, 10V

Brand :

IXYS

Base Product Number :

IXTP2

Transistor Type :

1 N-Channel

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Product Status :

Active

Input Capacitance :

440 pF

Max Power Dissipation :

54 W

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Form :

THROUGH-HOLE

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Pin Count :

3

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

6.2 Ω

Minimum Operating Temperature :

- 55 C

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Product Category :

MOSFET

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Rise Time :

18ns

Package / Case :

TO-220-3

Published :

2003

Power Dissipation :

54W

Drain Current-Max (Abs) (ID) :

2A

Mounting Style :

Through Hole

Packaging :

Tube

Drain to Source Voltage (Vdss) :

800V

Max Operating Temperature :

150 °C

Subcategory :

MOSFETs

Fall Time (Typ) :

15 ns

Rds On Max :

6.2 Ω

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Package Shape :

RECTANGULAR

Configuration :

Single

Product Type :

MOSFET

Drain to Source Resistance :

6.2 Ω

Length :

10.66 mm

Power Dissipation (Max) :

54W (Tc)

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB