IXTP2N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

DS Breakdown Voltage-Min :

800 V

Length :

10.66 mm

Transistor Element Material :

SILICON

Number of Terminations :

3

Reach Compliance Code :

Compliant

Number of Channels :

1 Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

200 mJ

Drain to Source Breakdown Voltage :

800V

Rds On (Max) @ Id, Vgs :

6.2 Ω @ 500mA, 10V

Package / Case :

TO-220-3

Width :

4.82 mm

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Mounting Type :

Through Hole

Terminal Position :

Single

Brand :

IXYS

Pbfree Code :

yes

Max Operating Temperature :

150 °C

Power Dissipation :

54W

Published :

2003

Min Operating Temperature :

-55 °C

Supplier Device Package :

TO-220AB

Configuration :

Single

Manufacturer :

IXYS

Package :

Tube

Pin Count :

3

Number of Elements :

1

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

54W Tc

Height :

9.15 mm

Transistor Polarity :

N-Channel

Pulsed Drain Current-Max (IDM) :

8A

JEDEC-95 Code :

TO-220AB

Terminal Form :

THROUGH-HOLE

Product Status :

Active

Continuous Drain Current (ID) :

2A

Drain-source On Resistance-Max :

6.2 Ω

Mount :

Through Hole

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Input Capacitance :

440 pF

Number of Terminals :

3

FET Type :

N-Channel

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Turn-Off Delay Time :

30 ns

Rds On Max :

6.2 Ω

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

2A

Mounting Style :

Through Hole

Max Power Dissipation :

54 W

Current - Continuous Drain (Id) @ 25°C :

2A Tc

FET Feature :

--

Series :

--

Base Product Number :

IXTP2

Drain to Source Resistance :

6.2 Ω

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

Power Dissipation (Max) :

54W (Tc)

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

800V

Fall Time (Typ) :

15 ns

Rise Time :

18ns

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Subcategory :

MOSFETs

Qualification Status :

Not Qualified

Case Connection :

DRAIN