IXTP2N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220AB

Rds On (Max) @ Id, Vgs :

6.2 Ω @ 500mA, 10V

Package / Case :

TO-220-3

Mounting Style :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

30 ns

Brand :

IXYS

Product Type :

MOSFET

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

18ns

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Subcategory :

MOSFETs

Number of Terminals :

3

Number of Channels :

1 Channel

Series :

--

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Power Dissipation-Max :

54W Tc

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

2A

Terminal Position :

Single

Drain to Source Resistance :

6.2 Ω

Product Category :

MOSFET

Surface Mount :

No

Max Power Dissipation :

54 W

Packaging :

Tube

Configuration :

Single

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Base Product Number :

IXTP2

Drain-source On Resistance-Max :

6.2 Ω

Channel Mode :

Enhancement

Input Capacitance :

440 pF

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Power Dissipation :

54W

FET Type :

N-Channel

Rds On Max :

6.2 Ω

Drain to Source Breakdown Voltage :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

200 mJ

Product Status :

Active

DS Breakdown Voltage-Min :

800 V

Length :

10.66 mm

Minimum Operating Temperature :

- 55 C

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Maximum Operating Temperature :

+ 150 C

Published :

2003

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Reach Compliance Code :

Compliant

Number of Terminations :

3

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

RoHS Status :

ROHS3 Compliant

Width :

4.82 mm

Pulsed Drain Current-Max (IDM) :

8A

Vgs (Max) :

±20V

Height :

9.15 mm

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

800V

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Max Operating Temperature :

150 °C

RoHS :

Details

Power Dissipation (Max) :

54W (Tc)

Package Shape :

RECTANGULAR

Transistor Type :

1 N-Channel

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

15 ns

FET Feature :

--

Min Operating Temperature :

-55 °C

Continuous Drain Current (ID) :

2A