IXTP2N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

5.1 Ω @ 1A, 10V

Mounting Type :

Through Hole

Power Dissipation (Max) :

55W (Tc)

Polarity :

N

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

5.1 Ω

DS Breakdown Voltage-Min :

600 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

25 Weeks

Turn-Off Delay Time :

60 ns

Avalanche Energy Rating (Eas) :

150 mJ

Voltage - Rated DC :

600V

Package Shape :

RECTANGULAR

Continuous Drain Current :

2(A)

Pbfree Code :

yes

Fall Time (Typ) :

23 ns

Operating Temp Range :

-55C to 150C

Mount :

Through Hole

Number of Terminations :

3

Drain-Source On-Volt :

600(V)

Gate-Source Voltage (Max) :

±30(V)

Power Dissipation :

55W

Qualification Status :

Not Qualified

Series :

Polar™

Number of Pins :

3

Product Status :

Obsolete

Operating Temperature Classification :

Military

Current Rating :

2A

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Terminal Finish :

Pure Tin (Sn)

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS Corporation

Drain to Source Voltage (Vdss) :

600V

JEDEC-95 Code :

TO-220AB

Rad Hardened :

No

Package Type :

TO-220

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

55 W

Package :

Tube

Terminal Position :

Single

Channel Mode :

Enhancement

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Supplier Device Package :

TO-220AB

Mounting :

Through Hole

Number of Elements :

1

Type :

Power MOSFET

JESD-30 Code :

R-PSFM-T3

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Published :

2010

Gate to Source Voltage (Vgs) :

30V

Rise Time :

20ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

55W Tc

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Continuous Drain Current (ID) :

2A

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

4A

Case Connection :

DRAIN

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Terminals :

3

Base Product Number :

IXTP2

Drain Current-Max (Abs) (ID) :

2A

Operating Temperature :

-55°C~150°C TJ