IXTP2N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

Maximum Operating Temperature :

+ 150 C

Height :

9.15 mm

Factory Lead Time :

17 Weeks

DS Breakdown Voltage-Min :

1000 V

Pulsed Drain Current-Max (IDM) :

5A

Width :

4.83 mm

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

3

Number of Elements :

1

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Avalanche Energy Rating (Eas) :

150 mJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Fall Time (Typ) :

27 ns

Power Dissipation-Max (Abs) :

86 W

Power Dissipation :

86W

Supplier Device Package :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 25V

Series :

Polar™

JESD-30 Code :

R-PSFM-T3

Transistor Type :

1 N-Channel

Drain-source On Resistance-Max :

7.5 Ω

Gate Charge (Qg) (Max) @ Vgs :

24.3nC @ 10V

Polarity/Channel Type :

N-Channel

Configuration :

Single

Published :

2008

Product Category :

MOSFET

Package :

Tube

Package / Case :

TO-220-3

Element Configuration :

Single

Manufacturer :

IXYS

Drain Current-Max (Abs) (ID) :

2A

Number of Channels :

1 Channel

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

86W (Tc)

Mounting Style :

Through Hole

FET Type :

N-Channel

Mount :

Through Hole

Terminal Position :

Single

Brand :

IXYS

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

RoHS :

Details

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Number of Terminations :

3

Channel Mode :

Enhancement

Power Dissipation-Max :

86W Tc

Turn-Off Delay Time :

80 ns

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

1000V

JESD-609 Code :

e1

Pbfree Code :

yes

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Mounting Type :

Through Hole

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Continuous Drain Current (ID) :

2A

Base Product Number :

IXTP2

Lead Free :

Lead Free

Packaging :

Tube

Length :

10.66 mm

Rise Time :

29ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

1kV

Surface Mount :

No