IXTP2N100P
- Mfr.Part #
- IXTP2N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 2A TO220AB
- Stock
- 130
- In Stock :
- 130
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 86 W
- Series :
- Polar™
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Reach Compliance Code :
- Compliant
- Mounting Style :
- Through Hole
- Power Dissipation (Max) :
- 86W (Tc)
- Manufacturer :
- IXYS
- Pin Count :
- 3
- Transistor Type :
- 1 N-Channel
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Width :
- 4.83 mm
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 2A
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Channel Mode :
- Enhancement
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Height :
- 9.15 mm
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- Not Qualified
- Length :
- 10.66 mm
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 7.5 Ω
- JESD-609 Code :
- e1
- Power Dissipation-Max :
- 86W Tc
- Case Connection :
- DRAIN
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- + 150 C
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 1000V
- Input Capacitance (Ciss) (Max) @ Vds :
- 655pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- Base Product Number :
- IXTP2
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 24.3nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 5A
- Published :
- 2008
- Lead Free :
- Lead Free
- Rise Time :
- 29ns
- DS Breakdown Voltage-Min :
- 1000 V
- Power Dissipation :
- 86W
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 27 ns
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Number of Channels :
- 1 Channel
- Turn-Off Delay Time :
- 80 ns
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- TO-220AB
- Factory Lead Time :
- 17 Weeks
- Continuous Drain Current (ID) :
- 2A
- Package / Case :
- TO-220-3
- Drain to Source Breakdown Voltage :
- 1kV
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Surface Mount :
- No
- RoHS :
- Details
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXTP2N100P

N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 655pF @ 25V 24.3nC @ 10V 1000V TO-220-3
IXTP2N100P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.A device's maximum input capacitance is 655pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 5A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP2N100P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
a 1000V drain to source voltage (Vdss)
IXTP2N100P Applications
There are a lot of IXYS
IXTP2N100P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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