IXTP2N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

2A

Series :

--

Pin Count :

3

Turn-Off Delay Time :

60 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Elements :

1

RoHS :

Details

Terminal Form :

THROUGH-HOLE

FET Feature :

--

Packaging :

Tube

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

7 Ω @ 1A, 10V

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Through Hole

Base Product Number :

IXTP2

Maximum Operating Temperature :

+ 150 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

8A

Published :

2009

Fall Time (Typ) :

30 ns

Resistance :

7.5mOhm

Minimum Operating Temperature :

- 55 C

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Brand :

IXYS

DS Breakdown Voltage-Min :

1000 V

Length :

10.66 mm

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 25V

Package :

Tube

Height :

9.15 mm

Rise Time :

15ns

Case Connection :

DRAIN

Drain-source On Resistance-Max :

7 Ω

Power Dissipation-Max (Abs) :

75 W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

1kV

Transistor Element Material :

SILICON

Number of Terminals :

3

Configuration :

Single

Product Status :

Active

JESD-609 Code :

e3

Product Category :

MOSFET

Power Dissipation :

100W

Supplier Device Package :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Channel Mode :

Enhancement

Width :

4.82 mm

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Manufacturer :

IXYS

Mount :

Through Hole

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

100W (Tc)

Drain to Source Voltage (Vdss) :

1000V

FET Type :

N-Channel

Surface Mount :

No

Power Dissipation-Max :

100W Tc

Polarity/Channel Type :

N-Channel

Package / Case :

TO-220-3

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Number of Channels :

1 Channel

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

2A

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Mounting Style :

Through Hole

Avalanche Energy Rating (Eas) :

150 mJ