IXTP2N100

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Mfr.Part #
IXTP2N100
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 2A TO220AB
Stock
248
In Stock :
248

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Matte Tin (Sn)
RoHS :
Details
FET Feature :
--
JEDEC-95 Code :
TO-220AB
Fall Time (Typ) :
30 ns
Power Dissipation :
100W
Pulsed Drain Current-Max (IDM) :
8A
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Terminal Form :
THROUGH-HOLE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Lead Free :
Lead Free
Product Category :
MOSFET
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Published :
2009
Operating Mode :
ENHANCEMENT MODE
Number of Channels :
1 Channel
Case Connection :
DRAIN
Supplier Device Package :
TO-220AB
Resistance :
7.5mOhm
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Height :
9.15 mm
Additional Feature :
AVALANCHE RATED
Package :
Tube
Product Type :
MOSFET
DS Breakdown Voltage-Min :
1000 V
Transistor Type :
1 N-Channel
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max (Abs) :
75 W
Turn-Off Delay Time :
60 ns
Maximum Operating Temperature :
+ 150 C
JESD-30 Code :
R-PSFM-T3
Rise Time :
15ns
Transistor Polarity :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
2A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
7 Ω @ 1A, 10V
FET Type :
N-Channel
Package / Case :
TO-220-3
Drain to Source Breakdown Voltage :
1kV
Polarity/Channel Type :
N-Channel
Terminal Position :
Single
Number of Pins :
3
Element Configuration :
Single
Drain-source On Resistance-Max :
7 Ω
Series :
--
Pbfree Code :
yes
Number of Terminals :
3
Length :
10.66 mm
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
825pF @ 25V
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Brand :
IXYS
Configuration :
Single
Drain Current-Max (Abs) (ID) :
2A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Power Dissipation (Max) :
100W (Tc)
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max :
100W Tc
Drain to Source Voltage (Vdss) :
1000V
Vgs (Max) :
±20V
Mount :
Through Hole
Pin Count :
3
Continuous Drain Current (ID) :
2A
Avalanche Energy Rating (Eas) :
150 mJ
Width :
4.82 mm
Base Product Number :
IXTP2
Product Status :
Active
JESD-609 Code :
e3
Mounting Style :
Through Hole
Datasheets
IXTP2N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP2N100 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, IXTP2N100 pinout, IXTP2N100 datasheet PDF, IXTP2N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP2N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP2N100


N-Channel Tube 7 Ω @ 1A, 10V ±20V 825pF @ 25V 40nC @ 10V 1000V TO-220-3

IXTP2N100 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 825pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 8A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP2N100 Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 8A.
a 1000V drain to source voltage (Vdss)


IXTP2N100 Applications


There are a lot of IXYS
IXTP2N100 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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