IXTP2N100
- Mfr.Part #
- IXTP2N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 2A TO220AB
- Stock
- 248
- In Stock :
- 248
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Matte Tin (Sn)
- RoHS :
- Details
- FET Feature :
- --
- JEDEC-95 Code :
- TO-220AB
- Fall Time (Typ) :
- 30 ns
- Power Dissipation :
- 100W
- Pulsed Drain Current-Max (IDM) :
- 8A
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Terminal Form :
- THROUGH-HOLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Published :
- 2009
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1 Channel
- Case Connection :
- DRAIN
- Supplier Device Package :
- TO-220AB
- Resistance :
- 7.5mOhm
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Height :
- 9.15 mm
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 1000 V
- Transistor Type :
- 1 N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Channel Mode :
- Enhancement
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 75 W
- Turn-Off Delay Time :
- 60 ns
- Maximum Operating Temperature :
- + 150 C
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 15ns
- Transistor Polarity :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 7 Ω @ 1A, 10V
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Drain to Source Breakdown Voltage :
- 1kV
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Number of Pins :
- 3
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 7 Ω
- Series :
- --
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Length :
- 10.66 mm
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 825pF @ 25V
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- Brand :
- IXYS
- Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 100W (Tc)
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max :
- 100W Tc
- Drain to Source Voltage (Vdss) :
- 1000V
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 2A
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Width :
- 4.82 mm
- Base Product Number :
- IXTP2
- Product Status :
- Active
- JESD-609 Code :
- e3
- Mounting Style :
- Through Hole
- Datasheets
- IXTP2N100

N-Channel Tube 7 Ω @ 1A, 10V ±20V 825pF @ 25V 40nC @ 10V 1000V TO-220-3
IXTP2N100 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 825pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 8A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTP2N100 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 8A.
a 1000V drain to source voltage (Vdss)
IXTP2N100 Applications
There are a lot of IXYS
IXTP2N100 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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