IXTP26P10T
- Mfr.Part #
- IXTP26P10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 26A TO220AB
- Stock
- 18,764
- In Stock :
- 18,764
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 15V
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Pin Count :
- 3
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3820pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±15V
- Pulsed Drain Current-Max (IDM) :
- 80A
- Published :
- 2012
- Base Product Number :
- IXTP26
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Rise Time :
- 15ns
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Series :
- TrenchP™
- Turn-Off Delay Time :
- 37 ns
- Power Dissipation :
- 150W
- Fall Time (Typ) :
- 1 ns
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 100 V
- Drain to Source Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Power Dissipation (Max) :
- 150W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Power Dissipation-Max :
- 150W Tc
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 13A, 10V
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max (Abs) :
- 150 W
- Number of Terminals :
- 3
- Reach Compliance Code :
- Unknown
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 100V
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS Corporation
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-220AB
- Drain Current-Max (Abs) (ID) :
- 26 A
- Package :
- Tube
- FET Type :
- P-Channel
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 26A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.09Ohm
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- P-Channel
- Terminal Form :
- THROUGH-HOLE
- Datasheets
- IXTP26P10T

P-Channel Tube 90m Ω @ 13A, 10V ±15V 3820pF @ 25V 52nC @ 10V 100V TO-220-3
IXTP26P10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3820pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.There is no drain current on this device since the maximum continuous current it can conduct is 26 A.As a result of its turn-off delay time, which is 37 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 80A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 15VV.In order for DS breakdown voltage to remain above 100 V, it should remain above the 100 V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTP26P10T Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 80A.
a 100V drain to source voltage (Vdss)
IXTP26P10T Applications
There are a lot of IXYS
IXTP26P10T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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