IXTP260N055T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Product Type :

MOSFET

Content :

1pc(s)

Current - Continuous Drain (Id) @ 25°C :

260A Tc

JESD-30 Code :

R-PSFM-T3

Package Shape :

RECTANGULAR

Rise Time :

27 ns

Series :

TrenchT2™

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Base Product Number :

IXTP260

Maximum Operating Temperature :

+ 175 C

Width :

4.83 mm

JESD-609 Code :

e1

Terminal Form :

THROUGH-HOLE

Manuf. code :

IXY

Type :

N-Channel

Avalanche Energy Rating (Eas) :

600 mJ

Surface Mount :

No

Drain-source On Resistance-Max :

0.0033Ohm

Pin Count :

3

Number of Elements :

1

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

55V

Pbfree Code :

yes

Channel Mode :

Enhancement

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

260A

Channels :

1

RoHS :

Details

DS Breakdown Voltage-Min :

55V

Mounting Style :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Brand :

IXYS

RoHS Status :

ROHS3 Compliant

Package :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Power (max) P(TOT) :

480W

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Power Dissipation-Max (Abs) :

480 W

Manufacturer :

IXYS

Configuration :

SINGLE WITH BUILT-IN DIODE

Max. operating temperature :

+175°C

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Transistor Polarity :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Number of Terminals :

3

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Pulsed Drain Current-Max (IDM) :

780A

Tradename :

HiPerFET

Product Category :

MOSFET

Factory Lead Time :

24 Weeks

Supplier Device Package :

TO-220AB

Power Dissipation-Max :

480W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Transistor Application :

SWITCHING

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

10800pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

16 mm

Power Dissipation (Max) :

480W (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 50A, 10V

Length :

10.66 mm

JEDEC-95 Code :

TO-220AB

Enclosure :

TO 220AB

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

260 A

Published :

2009

Reach Compliance Code :

Compliant