IXTP24P085T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

16 mm

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Mode :

Enhancement

Type :

TrenchP Power MOSFET

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole

Base Product Number :

IXTP24

Supplier Device Package :

TO-220AB

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Package / Case :

TO-220-3

Pbfree Code :

yes

Terminal Position :

Single

Drain-source On Resistance-Max :

0.065Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

TrenchP

Packaging :

Tube

Series :

TrenchP™

Product Type :

MOSFET

Pulsed Drain Current-Max (IDM) :

80A

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2090pF @ 25V

Product Status :

Active

Avalanche Energy Rating (Eas) :

200 mJ

Transistor Element Material :

SILICON

FET Feature :

--

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Details

Vgs (Max) :

±15V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Continuous Drain Current (ID) :

24A

Case Connection :

DRAIN

Package :

Tube

Maximum Operating Temperature :

+ 150 C

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

83W Tc

Terminal Finish :

PURE TIN

Number of Terminations :

3

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

85V

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Lead Free :

Lead Free

Mounting Style :

Through Hole

Transistor Polarity :

P-Channel

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

85V

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

65m Ω @ 12A, 10V

Length :

10.66 mm

Manufacturer :

IXYS

Brand :

IXYS

Width :

4.83 mm

Rise Time :

26 ns

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Power Dissipation (Max) :

83W (Tc)

Published :

2010