IXTP220N075T

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Mfr.Part #
IXTP220N075T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 75V 220A TO220AB
Stock
34,527
In Stock :
34,527

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Max Power Dissipation :
480 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Product Number :
IXTP220
Drain-source On Resistance-Max :
0.0085Ohm
Manufacturer :
IXYS Corporation
Terminal Finish :
Matte Tin (Sn)
Drain to Source Resistance :
4.5 mΩ
Mount :
Through Hole
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Fall Time (Typ) :
47 ns
Number of Terminals :
3
Product Status :
Obsolete
Power Dissipation-Max :
480W Tc
Drain to Source Breakdown Voltage :
75V
Transistor Element Material :
SILICON
Rise Time :
65ns
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
75V
Case Connection :
DRAIN
Published :
2006
JEDEC-95 Code :
TO-220AB
Vgs(th) (Max) @ Id :
4V @ 250µA
RoHS :
Compliant
Additional Feature :
AVALANCHE RATED
Input Capacitance :
7.7 nF
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Continuous Drain (Id) @ 25°C :
220A Tc
Continuous Drain Current (ID) :
220A
Power Dissipation (Max) :
480W (Tc)
Series :
TrenchMV™
Input Capacitance (Ciss) (Max) @ Vds :
7700pF @ 25V
Package :
Tube
Rds On Max :
4.5 mΩ
Gate Charge (Qg) (Max) @ Vgs :
165nC @ 10V
Reach Compliance Code :
Compliant
Number of Elements :
1
Power Dissipation :
480W
Avalanche Energy Rating (Eas) :
750 mJ
Operating Temperature :
-55°C~175°C TJ
RoHS Status :
RoHS Compliant
Terminal Position :
Single
Min Operating Temperature :
-55 °C
Supplier Device Package :
TO-220AB
JESD-609 Code :
e3
Mounting Type :
Through Hole
Terminal Form :
THROUGH-HOLE
Package Shape :
RECTANGULAR
Pin Count :
3
Vgs (Max) :
±20V
FET Type :
N-Channel
FET Feature :
--
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
350A
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-220-3
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
175 °C
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
130A
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
4.5m Ω @ 25A, 10V
DS Breakdown Voltage-Min :
100 V
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
55 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
IXTP220N075T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP220N075T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, IXTP220N075T pinout, IXTP220N075T datasheet PDF, IXTP220N075T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP220N075T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP220N075T


N-Channel Tube 4.5m Ω @ 25A, 10V ±20V 7700pF @ 25V 165nC @ 10V 75V TO-220-3

IXTP220N075T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 750 mJ.A device's maximum input capacitance is 7700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 220A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=75V, and this device has a drain-to-source breakdown voltage of 75V voltage.Its drain current is 130A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Its maximum pulsed drain current is 350A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 4.5 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 75V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTP220N075T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 220A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 350A.
single MOSFETs transistor is 4.5 mΩ
a 75V drain to source voltage (Vdss)


IXTP220N075T Applications


There are a lot of IXYS
IXTP220N075T applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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