IXTP220N075T
- Mfr.Part #
- IXTP220N075T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 220A TO220AB
- Stock
- 34,527
- In Stock :
- 34,527
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Power Dissipation :
- 480 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXTP220
- Drain-source On Resistance-Max :
- 0.0085Ohm
- Manufacturer :
- IXYS Corporation
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Resistance :
- 4.5 mΩ
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Fall Time (Typ) :
- 47 ns
- Number of Terminals :
- 3
- Product Status :
- Obsolete
- Power Dissipation-Max :
- 480W Tc
- Drain to Source Breakdown Voltage :
- 75V
- Transistor Element Material :
- SILICON
- Rise Time :
- 65ns
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 75V
- Case Connection :
- DRAIN
- Published :
- 2006
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS :
- Compliant
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance :
- 7.7 nF
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 220A Tc
- Continuous Drain Current (ID) :
- 220A
- Power Dissipation (Max) :
- 480W (Tc)
- Series :
- TrenchMV™
- Input Capacitance (Ciss) (Max) @ Vds :
- 7700pF @ 25V
- Package :
- Tube
- Rds On Max :
- 4.5 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Power Dissipation :
- 480W
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Single
- Min Operating Temperature :
- -55 °C
- Supplier Device Package :
- TO-220AB
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- FET Feature :
- --
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 350A
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 175 °C
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 130A
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 25A, 10V
- DS Breakdown Voltage-Min :
- 100 V
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 55 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- IXTP220N075T

N-Channel Tube 4.5m Ω @ 25A, 10V ±20V 7700pF @ 25V 165nC @ 10V 75V TO-220-3
IXTP220N075T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 750 mJ.A device's maximum input capacitance is 7700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 220A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=75V, and this device has a drain-to-source breakdown voltage of 75V voltage.Its drain current is 130A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Its maximum pulsed drain current is 350A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 4.5 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 75V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP220N075T Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 220A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 350A.
single MOSFETs transistor is 4.5 mΩ
a 75V drain to source voltage (Vdss)
IXTP220N075T Applications
There are a lot of IXYS
IXTP220N075T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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