IXTP220N04T2

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Mfr.Part #
IXTP220N04T2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 40V 220A TO220AB
Stock
32
In Stock :
32

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
9.15 mm
Input Capacitance (Ciss) (Max) @ Vds :
6820pF @ 25V
Continuous Drain Current (ID) :
220A
Mounting Style :
Through Hole
Fall Time (Typ) :
21 ns
Power Dissipation :
360W
Package :
Tube
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
40V
Vgs(th) (Max) @ Id :
4V @ 250µA
Rds On (Max) @ Id, Vgs :
3.5m Ω @ 50A, 10V
Minimum Operating Temperature :
- 55 C
Mounting Type :
Through Hole
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
600 mJ
Pin Count :
3
Number of Terminations :
3
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
JESD-609 Code :
e3
Product Category :
MOSFET
Published :
2008
Series :
TrenchT2™
Transistor Type :
1 N-Channel
Lead Free :
Lead Free
Maximum Operating Temperature :
+ 175 C
Transistor Application :
SWITCHING
Transistor Polarity :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Mount :
Through Hole
Tradename :
HiPerFET
Configuration :
Single
Rise Time :
21ns
Drain to Source Voltage (Vdss) :
40V
Case Connection :
DRAIN
Turn-Off Delay Time :
31 ns
Length :
10.66 mm
JEDEC-95 Code :
TO-220AB
Gate Charge (Qg) (Max) @ Vgs :
112nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Additional Feature :
AVALANCHE RATED
Terminal Finish :
Matte Tin (Sn)
Current - Continuous Drain (Id) @ 25°C :
220A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
FET Feature :
--
Power Dissipation (Max) :
360W (Tc)
Supplier Device Package :
TO-220AB
Power Dissipation-Max :
360W Tc
Factory Lead Time :
24 Weeks
FET Type :
N-Channel
Vgs (Max) :
±20V
Number of Channels :
1 Channel
Package / Case :
TO-220-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Pbfree Code :
yes
ECCN Code :
EAR99
JESD-30 Code :
R-PSFM-T3
Transistor Element Material :
SILICON
Base Product Number :
IXTP220
RoHS :
Details
Channel Mode :
Enhancement
Current :
75A
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage :
40V
Product Type :
MOSFET
Packaging :
Tube
Drain-source On Resistance-Max :
0.0035Ohm
Reach Compliance Code :
Compliant
Width :
4.83 mm
Product Status :
Active
Datasheets
IXTP220N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP220N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Package / Case:TO-220-3, Voltage:40V, IXTP220N04T2 pinout, IXTP220N04T2 datasheet PDF, IXTP220N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP220N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP220N04T2


N-Channel Tube 3.5m Ω @ 50A, 10V ±20V 6820pF @ 25V 112nC @ 10V 40V TO-220-3

IXTP220N04T2 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 600 mJ.A device's maximal input capacitance is 6820pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 220A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 31 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP220N04T2 Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 220A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 31 ns
a 40V drain to source voltage (Vdss)


IXTP220N04T2 Applications


There are a lot of IXYS
IXTP220N04T2 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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