IXTP200N075T

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Mfr.Part #
IXTP200N075T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 75V 200A TO220AB
Stock
29,583
In Stock :
29,583

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
200A
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
430W (Tc)
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Mounting Type :
Through Hole
Surface Mount :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max :
430W Tc
Terminal Position :
Single
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Published :
2006
Turn-Off Delay Time :
54 ns
Supplier Device Package :
TO-220AB
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Obsolete
Number of Elements :
1
ECCN Code :
EAR99
RoHS Status :
RoHS Compliant
Avalanche Energy Rating (Eas) :
750 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.005ohm
Pin Count :
3
Drain to Source Breakdown Voltage :
75V
Packaging :
Tube
Vgs (Max) :
±20V
Series :
TrenchMV™
JEDEC-95 Code :
TO-220AB
Rds On (Max) @ Id, Vgs :
5m Ω @ 25A, 10V
Number of Terminals :
3
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
200A Tc
Drain to Source Voltage (Vdss) :
75V
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
Matte Tin (Sn)
Package / Case :
TO-220-3
Fall Time (Typ) :
52 ns
FET Feature :
--
Case Connection :
DRAIN
Reach Compliance Code :
Compliant
Rise Time :
57ns
DS Breakdown Voltage-Min :
75 V
Base Product Number :
IXTP200
Pulsed Drain Current-Max (IDM) :
540A
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Package :
Tube
Mount :
Through Hole
Power Dissipation :
430W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 250µA
Manufacturer :
IXYS Corporation
Pbfree Code :
yes
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSFM-T3
JESD-609 Code :
e3
Datasheets
IXTP200N075T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP200N075T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, IXTP200N075T pinout, IXTP200N075T datasheet PDF, IXTP200N075T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP200N075T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP200N075T


N-Channel Tube 5m Ω @ 25A, 10V ±20V 6800pF @ 25V 160nC @ 10V 75V TO-220-3

IXTP200N075T Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [54 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 540A.The DS breakdown voltage should be maintained above 75 V to maintain normal operation.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP200N075T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 540A.
a 75V drain to source voltage (Vdss)


IXTP200N075T Applications


There are a lot of IXYS
IXTP200N075T applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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